Temperature Dependence of Emission Properties of Self-Assembled InGaN Quantum Dots

• Published in: Chinese physics letters Vol. 31; no. 11; pp. 70 - 73
• Main Author: 赵婉茹 翁国恩 梁明明 李增成 刘建平 张江勇 张保平
• Format: Journal Article
• Language: English
• Published: 01.11.2014
• Subjects: Carriers; Confinement; Emission; Emission analysis; Energy gaps (solid state); InGaN; Photoluminescence; Quantum dots; Temperature dependence; 发射性能; 峰值能量; 温度依赖性; 绿色发光; 自组装; 量子点; 金属有机化学气相沉积

Emission properties of self-assembled green-emitting InGaN quantum dots （QDs） grown on sapphire substrates by using metal organic chemical vapor deposition are studied by temperature-dependent photoluminescence （PL） measurements. As temperature increases （15-300K）, the PL peak energy shows an anomal...