Epoxy bond and stop-etch (EBASE) technique enabling backside processing of (Al)GaAs heterostructures

The epoxy bond and stop-etch (EBASE) technique enables both the frontside and the backside processing of very thin (∼3000Å) GaAs/AlGaAs epitaxial layer structures. Using this technique, a conventionally processed epitaxial layer structure is inverted and epoxied to a new host substrate. The original...

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Published inSuperlattices and microstructures Vol. 20; no. 4; pp. 561 - 567
Main Authors Weckwerth, M.V., Simmons, J.A., Harff, N.E., Sherwin, M.E., Blount, M.A., Baca, W.E., Chui, H.C.
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 01.01.1996
Elsevier
Subjects
Applied sciences
backgates
Electronics
Exact sciences and technology
fabrication
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
two-dimensional electron gas
backgates
fabrication
two-dimensional electron gas
Ternary compound
Gallium Arsenides
Aluminium Arsenides
Binary compound
Microelectronic fabrication
Epoxide
Experimental study
III-V compound
Thin film
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Summary:The epoxy bond and stop-etch (EBASE) technique enables both the frontside and the backside processing of very thin (∼3000Å) GaAs/AlGaAs epitaxial layer structures. Using this technique, a conventionally processed epitaxial layer structure is inverted and epoxied to a new host substrate. The original substrate is removed leaving only the original epitaxial structure expoxied to the host substrate. The exposed backside of the epitaxial structure may then be processed. Because the structures fabricated using this technique are so thin, mesas, Schottky gates, and ohmic contacts may be defined in close proximity both above and below the active device layers.
ISSN:0749-6036
1096-3677
DOI:10.1006/spmi.1996.0115