The effect of vacancies and the substitution of p-block atoms on single-layer buckled germanium selenide

• Published in: RSC advances Vol. 7; no. 6; pp. 37815 - 37822
• Main Authors: Ersan, F, Arkin, H, Aktürk, E
• Format: Journal Article
• Language: English
• Published: 01.01.2017

Single-layer GeSe is a new candidate in the two-dimensional family of materials. In our recent study, we showed that GeSe can form a stable buckled honeycomb structure (b-GeSe) and is a semiconductor with a 2.29 eV band gap. This paper investigates the effect of point defects of both hole (Ge, Se) a...