Fluorescent emission characteristics of polycrystalline diamond film prepared by direct current jet CVD
The free-standing diamond films are deposited on molybdenum substrate by direct current jet chemical vapor deposition (DCJCVD). X-ray diffraction, Raman spectroscopy and cathodoluminescence (CL) measurement are used to investigate the films structure and defects related to electron transition proper...
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Published in | Optoelectronics letters Vol. 5; no. 5; pp. 356 - 358 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
Heidelberg
Tianjin University of Technology
01.09.2009
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ISSN | 1673-1905 1993-5013 |
DOI | 10.1007/s11801-009-9160-1 |
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Abstract | The free-standing diamond films are deposited on molybdenum substrate by direct current jet chemical vapor deposition (DCJCVD). X-ray diffraction, Raman spectroscopy and cathodoluminescence (CL) measurement are used to investigate the films structure and defects related to electron transition properties of the diamond films. The X-ray diffraction spectrum reveals that the diamond films have the polycrystalline cubic structure with diffraction peaks at 43.88° and 75.24°. A sharp peak at 1331.8 cm^-1 and a broad band at about 1250-1550 cm^-1 from Raman spectrum are attributed to diamond phase and sp2-type carbons, respectively. Two emission peaks at 440 nm and 530 nm, associated with dislocation defects and nitrogen and vacancy complexes respectively, are observed in cathodoluminescence spectrum. In addition, in order to understand both emission processes, a simple energy level scheme is suggested. |
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AbstractList | The free-standing diamond films are deposited on molybdenum substrate by direct current jet chemical vapor deposition (DCJCVD). X-ray diffraction, Raman spectroscopy and cathodoluminescence (CL) measurement are used to investigate the films structure and defects related to electron transition properties of the diamond films. The X-ray diffraction spectrum reveals that the diamond films have the polycrystalline cubic structure with diffraction peaks at 43.88° and 75.24°. A sharp peak at 1331.8 cm
−1
and a broad band at about 1250–1550 cm
−1
from Raman spectrum are attributed to diamond phase and sp
2
-type carbons, respectively. Two emission peaks at 440 nm and 530 nm, associated with dislocation defects and nitrogen and vacancy complexes respectively, are observed in cathodoluminescence spectrum. In addition, in order to understand both emission processes, a simple energy level scheme is suggested. The free-standing diamond films are deposited on molybdenum substrate by direct current jet chemical vapor deposition (DCJCVD). X-ray diffraction, Raman spectroscopy and cathodoluminescence (CL) measurement are used to investigate the films structure and defects related to electron transition properties of the diamond films. The X-ray diffraction spectrum reveals that the diamond films have the polycrystalline cubic structure with diffraction peaks at 43.88° and 75.24°. A sharp peak at 1331.8 cm^-1 and a broad band at about 1250-1550 cm^-1 from Raman spectrum are attributed to diamond phase and sp2-type carbons, respectively. Two emission peaks at 440 nm and 530 nm, associated with dislocation defects and nitrogen and vacancy complexes respectively, are observed in cathodoluminescence spectrum. In addition, in order to understand both emission processes, a simple energy level scheme is suggested. |
Author | 王兰芳 陈希明 张忠朋 庄晋艳 李岚 |
AuthorAffiliation | Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384, China Tianjin Key Laboratory for Optoelectronic Materials and Devices, Institute of Material Physics, Tianjin University of Technology, Tianjin 300384, China Key Laboratory of Display Materials and Photoelectric Devices of Ministry of Education, Institute of Material Physics, Tianjin University of Technology, Tianjin 300384, China |
Author_xml | – sequence: 1 fullname: 王兰芳 陈希明 张忠朋 庄晋艳 李岚 |
BookMark | eNp9kMFOAyEURYmpibX2A9wR96O8eTNDWZpq1aSJG3VLGIZpqVOoQBf9e2nalQvZQPI49-WeazJy3hlCboHdA2P8IQLMGBSMiUJAwwq4IGMQAouaAY7yu-FYgGD1FZnGuGH5YMlnlRiT1WLY-2CiNi5Rs7UxWu-oXqugdDLBxmR1pL6nOz8cdDjEpIbBOkM7q7bedbS3w5bugtmpYDraHvIgGJ2o3odwzNyYROdfTzfksldDNNPzPSGfi-eP-WuxfH95mz8uC41Qp6JsgQPymvNKoClnTa9mCJoLwVWjVIcAuVPZKlaJBrFGLqq6Q2Si5azTLU4IP-Xq4GMMppfaJpVyqRSUHSQweVQmT8pkViaPyiRkEv6Qu2C3Khz-ZcoTE_NftzJBbvw-uFzwX-juvGjt3eonc7JV-juLNBKhEqwqK_wFkmSLtA |
CitedBy_id | crossref_primary_10_3390_ma13163530 |
Cites_doi | 10.1063/1.345708 10.1016/S0022-0248(01)01802-4 10.1063/1.348539 10.1111/j.1151-2916.1989.tb06099.x 10.1007/s11801-008-8070-y 10.1016/j.diamond.2004.12.012 10.1016/j.ijrmhm.2005.11.012 10.1016/S0925-8388(01)01740-6 10.1016/S0925-9635(97)00124-6 10.1088/0256-307X/26/3/038102 10.1063/1.1805723 10.1063/1.115674 10.1103/PhysRev.139.A588 10.1557/JMR.1989.0385 10.1063/1.122059 10.1103/PhysRevB.39.13367 10.4028/www.scientific.net/SSP.124-126.467 10.1088/0256-307X/24/12/058 10.1103/PhysRevB.49.7934 10.1016/0925-9635(94)90301-8 10.1063/1.347261 |
ContentType | Journal Article |
Copyright | Tianjin University of Technology and Springer Berlin Heidelberg 2009 |
Copyright_xml | – notice: Tianjin University of Technology and Springer Berlin Heidelberg 2009 |
DBID | 2RA 92L CQIGP ~WA AAYXX CITATION |
DOI | 10.1007/s11801-009-9160-1 |
DatabaseName | 维普期刊资源整合服务平台 中文科技期刊数据库-CALIS站点 中文科技期刊数据库-7.0平台 中文科技期刊数据库- 镜像站点 CrossRef |
DatabaseTitle | CrossRef |
DatabaseTitleList | |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Applied Sciences Physics |
DocumentTitleAlternate | Fluorescent emission characteristics of polycrystalline diamond film prepared by direct current jet CVD |
EISSN | 1993-5013 |
EndPage | 358 |
ExternalDocumentID | 10_1007_s11801_009_9160_1 31490424 |
GroupedDBID | -5F -5G -BR -EM -SI -S~ -Y2 -~C .VR 06D 0R~ 0VY 123 1N0 29N 29~ 2B. 2C0 2J2 2JN 2JY 2KG 2KM 2LR 2RA 2VQ 2~H 30V 4.4 406 408 40D 40E 5VR 5VS 6NX 8TC 92H 92I 92L 92R 93N 95- 95. 95~ 96X AAAVM AABHQ AACDK AAHNG AAIAL AAJBT AAJKR AANZL AARHV AARTL AASML AATNV AATVU AAUYE AAWCG AAXDM AAYIU AAYQN AAYTO AAYZH ABAKF ABDZT ABECU ABFTV ABHLI ABHQN ABJNI ABJOX ABKCH ABMNI ABMQK ABNWP ABQBU ABSXP ABTEG ABTHY ABTKH ABTMW ABWNU ABXPI ACAOD ACBXY ACDTI ACGFS ACHSB ACHXU ACKNC ACMDZ ACMLO ACOKC ACOMO ACSNA ACZOJ ADHHG ADHIR ADINQ ADKNI ADKPE ADRFC ADTPH ADURQ ADYFF ADZKW AEBTG AEFQL AEGAL AEGNC AEJHL AEJRE AEKMD AEMSY AEOHA AEPYU AESKC AETLH AEVLU AEXYK AFBBN AFGCZ AFLOW AFQWF AFUIB AFWTZ AFZKB AGAYW AGDGC AGJBK AGMZJ AGQEE AGQMX AGRTI AGWIL AGWZB AGYKE AHAVH AHBYD AHKAY AHSBF AHYZX AIAKS AIGIU AIIXL AILAN AITGF AJBLW AJRNO ALMA_UNASSIGNED_HOLDINGS ALWAN AMKLP AMXSW AMYLF AMYQR AOCGG ARMRJ AXYYD B-. BA0 BDATZ BGNMA CAG CAJEI CCEZO CHBEP COF CQIGP CS3 CSCUP CUBFJ CW9 DDRTE DNIVK DPUIP EBLON EBS EIOEI EJD ESBYG FA0 FERAY FFXSO FIGPU FINBP FNLPD FRRFC FSGXE FWDCC GGCAI GGRSB GJIRD GNWQR GQ6 GQ7 H13 HF~ HG6 HLICF HMJXF HRMNR HZ~ IJ- IKXTQ IWAJR IXD I~X I~Z J-C JBSCW JUIAU JZLTJ KOV LLZTM M4Y MA- NPVJJ NQJWS NU0 O9- O9J P9T PF0 PT4 Q-- QOS R89 R9I ROL RPX RSV S16 S1Z S27 S3B SAP SCL SDH SHX SISQX SJYHP SNE SNPRN SNX SOHCF SOJ SPH SPISZ SRMVM SSLCW STPWE SZN T13 TCJ TGT TSG TUC U1G U2A U5S UG4 UOJIU UTJUX UZXMN VC2 VFIZW WK8 YLTOR Z7R Z7X Z88 ZMTXR ~A9 ~WA ACPIV AAPKM AAYXX ABBRH ABDBE ABFSG ACSTC AEZWR AFDZB AFHIU AFOHR AHPBZ AHWEU AIXLP ATHPR AYFIA CITATION |
ID | FETCH-LOGICAL-c315t-2b17137577493e286fa831c7997a6aad3115012ba049633537945d3309b70dcb3 |
IEDL.DBID | AGYKE |
ISSN | 1673-1905 |
IngestDate | Tue Jul 01 02:10:24 EDT 2025 Thu Apr 24 22:58:46 EDT 2025 Fri Feb 21 02:37:00 EST 2025 Tue Jan 07 06:25:30 EST 2025 |
IsPeerReviewed | false |
IsScholarly | true |
Issue | 5 |
Keywords | Vacancy Complex Synthetic Diamond Cathodoluminescence Spectrum Dislocation Defect Diamond Film |
Language | English |
License | http://www.springer.com/tdm |
LinkModel | DirectLink |
MergedId | FETCHMERGED-LOGICAL-c315t-2b17137577493e286fa831c7997a6aad3115012ba049633537945d3309b70dcb3 |
Notes | TN304.18 O484.1 12-1370/TN |
PageCount | 3 |
ParticipantIDs | crossref_citationtrail_10_1007_s11801_009_9160_1 crossref_primary_10_1007_s11801_009_9160_1 springer_journals_10_1007_s11801_009_9160_1 chongqing_backfile_31490424 |
ProviderPackageCode | CITATION AAYXX |
PublicationCentury | 2000 |
PublicationDate | 2009-09-01 |
PublicationDateYYYYMMDD | 2009-09-01 |
PublicationDate_xml | – month: 09 year: 2009 text: 2009-09-01 day: 01 |
PublicationDecade | 2000 |
PublicationPlace | Heidelberg |
PublicationPlace_xml | – name: Heidelberg |
PublicationTitle | Optoelectronics letters |
PublicationTitleAbbrev | Optoelectron. Lett |
PublicationTitleAlternate | Opto-electronics Letters |
PublicationYear | 2009 |
Publisher | Tianjin University of Technology |
Publisher_xml | – name: Tianjin University of Technology |
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SSID | ssj0000327849 |
Score | 1.7461869 |
Snippet | The free-standing diamond films are deposited on molybdenum substrate by direct current jet chemical vapor deposition (DCJCVD). X-ray diffraction, Raman... The free-standing diamond films are deposited on molybdenum substrate by direct current jet chemical vapor deposition (DCJCVD). X-ray diffraction, Raman... |
SourceID | crossref springer chongqing |
SourceType | Enrichment Source Index Database Publisher |
StartPage | 356 |
SubjectTerms | Lasers Optical Devices Optics Photonics Physics Physics and Astronomy X射线衍射 制备 发射特性 喷射沉积 多晶金刚石 直流 荧光 金刚石薄膜 |
Title | Fluorescent emission characteristics of polycrystalline diamond film prepared by direct current jet CVD |
URI | http://lib.cqvip.com/qk/88368X/20095/31490424.html https://link.springer.com/article/10.1007/s11801-009-9160-1 |
Volume | 5 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV3JTsMwEB1BERIXdkRZKh84gVwldRwnx6pQKhCcKCqnyHYSlpamtOmhfD3jLK2KAIm7Eyf2jN8bz_gZ4CyMhQ4FD2nDVy51lGRUCu3R2HO0kMqRVqZbcHfvdrrOTY_3inPck7LavUxJZiv14rCb7ZnQ1_LRQV2LYsizxm3P9yqw1rx-ul1srVjMZNMM8bVdwShCHi_zmT-9x6gqvCTD5w_scxmdllOjGeK0t-Ch_Na80KRfn6aqrj-_yTj-82e2YbNgoKSZm8wOrETDXdgq2CgpfH2yC-tZcaie7MFzezBNxrnuEzH3w5kdNqKXpZ5JEpNRMpjp8QwJp1H6jgjaHlp5SOLXwTsZjaOs2p2oGcmBlOhcHIq8RSlpPV7uQ7d99dDq0OKCBqqZzVPaUDbGuIIjhfRZ1PDcWHrM1sL3hXSlDI2SDwKgkhiGuIxxhs7PQ8YsXwkr1IodQGWYDKNDIDpEouYgCsjIRETad2IPVwSpcMnhTLMqHM8nCQFe941sVcAwvjO52ypY5bQFutA2N1dsDIKFKrMZ8AAHPDADHthVOJ8_MsqFPf5qfFFOY1D4-OT31kf_an0MG3mGytStnUAlHU-jUyQ6qaoVhl2D1W6j-QWAgfMr |
linkProvider | Springer Nature |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1LT8MwDI7QEIILjwFijEcOnECR2qZt2uM0mAZsO21otypJ2_Eo7Wi7w_49Th-bJgESd7eR4tj-HDufEbrxQyZ9ZvnEcIVNTMEp4Uw6JHRMybgwuVbwFgxHdn9iPk2tafWOO6u73euSZOGp14_ddEelvpoLBmprBFKebcACjhpbMDE6q4sVjapamoK9us0ogYBn1dXMn_6iOBVek3j2BStuxqbNwmgRb3qHaL8CirhTavYIbQVxEx1UoBFXJpk10U7RwymzYzTrRYskLemZsBrjpi7CsNxkZMZJiOdJtJTpEnChIuQOMBwROIw-Dt-iTzxPg6IpHYslLuMdliWHE34Pctx9uT9Bk97DuNsn1RwFIqlu5cQQOqSizAKk59LAcOyQO1SXzHUZtzn3FeEOxCnBIVuwKbUo2KjlU6q5gmm-FPQUNeIkDs4Qlj7gKROcNQ9U4iJdM3TAcLkAz2BRSVuovdpNiMPyQ7FLeRTSMFVibSGt3l9PVhTkahJG5K3Jk5V6PFCPp9Tj6S10u_pkXvJv_CV8VyvNq0wx-136_F_S12i3Px4OvMHj6LmN9sqikmo1u0CNPF0El4BNcnFVnMVvbXDYYw |
linkToPdf | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV3JTsMwELUQCMSFpYAoZfGBE8hqUidxcqxaKnZxoKi3yEvCVpLShkP_npksrSoBEncnljzbG8_4DSGnJhbaCNewVqA85ijJmRTaZ7HvaCGVI62ct-Du3rvsO9cDd1DOOZ1U3e5VSbJ404AsTUnWHJm4OX_4ZvuYBlsBGKtnMUh_VsAb26jo_VZ7dslicayrIQS2PcEZBD-3qmz-9BfkV3hJk-dP2H0xTi0WSfPY09siGyVopO1CyttkKUpqZLMEkLQ0z0mNrOb9nHqyQ557w690XFA1URzphpdiVC-yM9M0pqN0ONXjKWBEJOeOKKgLKKah8evwg47GUd6gTtWUFrGP6oLPib5FGe08dXdJv3fx2Llk5UwFprntZqylbEhLhQuoL-BRy_di6XNbiyAQ0pPSIPkOxCwlIXPwOHc52KtrOLcCJSyjFd8jy0maRPuEagPYygHHLSNMYnTgxD4YsVTgJVyueZ00ZqcJMVm_I9NUyCElw3JrnVjV-Ya6pCPHqRjDcE6kjOIJQTwhiie06-Rs9smo4OL4a_F5JbSwNMvJ76sP_rX6hKw9dHvh7dX9TYOsF_Ul7Do7JMvZ-Cs6ApiSqeNcFb8BJzncnw |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Fluorescent+emission+characteristics+of+polycrystalline+diamond+film+prepared+by+direct+current+jet+CVD&rft.jtitle=Optoelectronics+letters&rft.au=%E7%8E%8B%E5%85%B0%E8%8A%B3+%E9%99%88%E5%B8%8C%E6%98%8E+%E5%BC%A0%E5%BF%A0%E6%9C%8B+%E5%BA%84%E6%99%8B%E8%89%B3+%E6%9D%8E%E5%B2%9A&rft.date=2009-09-01&rft.issn=1673-1905&rft.issue=5&rft.spage=356&rft.epage=358&rft_id=info:doi/10.1007%2Fs11801-009-9160-1&rft.externalDocID=31490424 |
thumbnail_s | http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=http%3A%2F%2Fimage.cqvip.com%2Fvip1000%2Fqk%2F88368X%2F88368X.jpg |