Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation
The degradations in NPN silicon-germanium （SiGe） heterojunction bipolar transistors （HBTs） were fully studied in this work, by means of 25-MeV Si, 10-MeV C1, 20-MeV Br, and 10-MeV Br ion irradiation, respectively. Electrical parameters such as the base current （IB）, current gain （β）, neutral base re...
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| Published in | Chinese physics B Vol. 23; no. 11; pp. 431 - 437 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.11.2014
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 1741-4199 |
| DOI | 10.1088/1674-1056/23/11/116104 |
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| Abstract | The degradations in NPN silicon-germanium （SiGe） heterojunction bipolar transistors （HBTs） were fully studied in this work, by means of 25-MeV Si, 10-MeV C1, 20-MeV Br, and 10-MeV Br ion irradiation, respectively. Electrical parameters such as the base current （IB）, current gain （β）, neutral base recombination （NBR）, and Early voltage （VA） were investigated and used to evaluate the tolerance to heavy ion irradiation. Experimental results demonstrate that device degradations are indeed radiation-source-dependent, and the larger the ion nuclear energy loss is, the more the displacement damages are, and thereby the more serious the performance degradation is. The maximum degradation was observed in the transistors irradiated by 10-MeV Br. For 20-MeV and 10-MeV Br ion irradiation, an unexpected degradation in Ic was observed and Early voltage decreased with increasing ion fluence, and NBR appeared to slow down at high ion fluence. The degradations in SiGe HBTs were mainly attributed to the displacement damages created by heavy ion irradiation in the transistors. The underlying physical mechanisms are analyzed and investigated in detail. |
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| AbstractList | The degradations in NPN silicon-germanium （SiGe） heterojunction bipolar transistors （HBTs） were fully studied in this work, by means of 25-MeV Si, 10-MeV C1, 20-MeV Br, and 10-MeV Br ion irradiation, respectively. Electrical parameters such as the base current （IB）, current gain （β）, neutral base recombination （NBR）, and Early voltage （VA） were investigated and used to evaluate the tolerance to heavy ion irradiation. Experimental results demonstrate that device degradations are indeed radiation-source-dependent, and the larger the ion nuclear energy loss is, the more the displacement damages are, and thereby the more serious the performance degradation is. The maximum degradation was observed in the transistors irradiated by 10-MeV Br. For 20-MeV and 10-MeV Br ion irradiation, an unexpected degradation in Ic was observed and Early voltage decreased with increasing ion fluence, and NBR appeared to slow down at high ion fluence. The degradations in SiGe HBTs were mainly attributed to the displacement damages created by heavy ion irradiation in the transistors. The underlying physical mechanisms are analyzed and investigated in detail. The degradations in NPN silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) were fully studied in this work, by means of 25-MeV Si, 10-MeV Cl, 20-MeV Br, and 10-MeV Br ion irradiation, respectively. Electrical parameters such as the base current (I sub(B)), current gain ( beta )), neutral base recombination (NBR), and Early voltage (V sub(A)) were investigated and used to evaluate the tolerance to heavy ion irradiation. Experimental results demonstrate that device degradations are indeed radiation-source-dependent, and the larger the ion nuclear energy loss is, the more the displacement damages are, and thereby the more serious the performance degradation is. The maximum degradation was observed in the transistors irradiated by 10-MeV Br. For 20-MeV and 10-MeV Br ion irradiation, an unexpected degradation in I sub(C) was observed and Early voltage decreased with increasing ion fluence, and NBR appeared to slow down at high ion fluence. The degradations in SiGe ElBTs were mainly attributed to the displacement damages created by heavy ion irradiation in the transistors. The underlying physical mechanisms are analyzed and investigated in detail. |
| Author | 孙亚宾 付军 许军 王玉东 周卫 张伟 催杰 李高庆 刘志弘 |
| AuthorAffiliation | Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beifing 100084, China |
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| CitedBy_id | crossref_primary_10_1016_j_mssp_2020_105336 crossref_primary_10_1016_j_net_2023_07_045 |
| Cites_doi | 10.1088/1674-1056/19/11/117307 10.1080/10420150.2013.763805 10.1016/j.nimb.2010.02.091 10.1088/1674-1056/21/8/080703 10.1109/TNS.2007.909022 10.1016/j.nima.2010.02.272 10.1109/JPROC.2005.852225 10.1016/j.nimb.2011.07.034 10.1016/j.nimb.2006.10.063 10.1016/j.sse.2005.11.007 10.1088/1674-1056/22/5/056103 10.1016/j.nimb.2006.08.018 10.1016/j.nimb.2013.07.013 10.1088/1674-1056/21/7/078503 10.1016/j.nimb.2011.07.032 10.1109/TNS.2009.2018552 10.7498/aps.62.196104 10.1109/TNS.2006.886231 10.1109/TNS.2013.2248167 10.1088/0034-4885/70/4/R01 10.1088/0268-1242/19/8/014 |
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| DocumentTitleAlternate | Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation |
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| Notes | heavy ion irradiation, displacement damage, SiGe heterojunction bipolar transistor The degradations in NPN silicon-germanium （SiGe） heterojunction bipolar transistors （HBTs） were fully studied in this work, by means of 25-MeV Si, 10-MeV C1, 20-MeV Br, and 10-MeV Br ion irradiation, respectively. Electrical parameters such as the base current （IB）, current gain （β）, neutral base recombination （NBR）, and Early voltage （VA） were investigated and used to evaluate the tolerance to heavy ion irradiation. Experimental results demonstrate that device degradations are indeed radiation-source-dependent, and the larger the ion nuclear energy loss is, the more the displacement damages are, and thereby the more serious the performance degradation is. The maximum degradation was observed in the transistors irradiated by 10-MeV Br. For 20-MeV and 10-MeV Br ion irradiation, an unexpected degradation in Ic was observed and Early voltage decreased with increasing ion fluence, and NBR appeared to slow down at high ion fluence. The degradations in SiGe HBTs were mainly attributed to the displacement damages created by heavy ion irradiation in the transistors. The underlying physical mechanisms are analyzed and investigated in detail. Sun Ya-Bin, Fu Jun, Zhou Wei, Zhang Li Gao-Qing, Xu Jun, Wang Yu-Dong, Wei, Cui Jie, and Liu Zhi-Hong（ Tsinghua National Laboratory for Information Science and Technoloev.Institute of Microelectronics, Tsinghua University, Beijing 100084, China） 11-5639/O4 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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| References | 11 22 12 24 14 15 16 17 18 19 1 Sun Y B (13) 2013; 22 Sun Y B (5) 2013; 62 Sun Y B (7) 2013 4 Liu C M (3) 2012; 21 Xue S B (6) 2010; 19 Prakash A P G (21) 2004; 19 Schrimpf R D (2) 2008 Chen C (8) 2012; 21 9 Cressler J D (23) 2003 Leroy C (20) 2007; 70 10 |
| References_xml | – volume: 19 start-page: 117307 issn: 1674-1056 year: 2010 ident: 6 publication-title: Chin. Phys. doi: 10.1088/1674-1056/19/11/117307 – ident: 10 doi: 10.1080/10420150.2013.763805 – ident: 18 doi: 10.1016/j.nimb.2010.02.091 – volume: 21 start-page: 80703 issn: 1674-1056 year: 2012 ident: 3 publication-title: Chin. Phys. doi: 10.1088/1674-1056/21/8/080703 – ident: 12 doi: 10.1109/TNS.2007.909022 – ident: 14 doi: 10.1016/j.nima.2010.02.272 – ident: 9 doi: 10.1109/JPROC.2005.852225 – ident: 16 doi: 10.1016/j.nimb.2011.07.034 – ident: 24 doi: 10.1016/j.nimb.2006.10.063 – ident: 17 doi: 10.1016/j.sse.2005.11.007 – volume: 22 start-page: 056103 issn: 1674-1056 year: 2013 ident: 13 publication-title: Chin. Phys. doi: 10.1088/1674-1056/22/5/056103 – start-page: 97 year: 2008 ident: 2 – ident: 19 doi: 10.1016/j.nimb.2006.08.018 – ident: 15 doi: 10.1016/j.nimb.2013.07.013 – year: 2003 ident: 23 publication-title: Silicon-Germanium Heterojunction Bipolar Transistors – volume: 21 start-page: 78503 issn: 1674-1056 year: 2012 ident: 8 publication-title: Chin. Phys. doi: 10.1088/1674-1056/21/7/078503 – ident: 4 doi: 10.1016/j.nimb.2011.07.032 – ident: 11 doi: 10.1109/TNS.2009.2018552 – volume: 62 start-page: 196104 issn: 0372-736X year: 2013 ident: 5 publication-title: Acta Phys. Sin. doi: 10.7498/aps.62.196104 – ident: 22 doi: 10.1109/TNS.2006.886231 – ident: 1 doi: 10.1109/TNS.2013.2248167 – start-page: 2 year: 2013 ident: 7 – volume: 70 start-page: 493 issn: 0034-4885 year: 2007 ident: 20 publication-title: Rep. Prog. Phys. doi: 10.1088/0034-4885/70/4/R01 – volume: 19 start-page: 1029 issn: 0268-1242 year: 2004 ident: 21 publication-title: Semicond. Sci. Tech. doi: 10.1088/0268-1242/19/8/014 |
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| Snippet | The degradations in NPN silicon-germanium （SiGe） heterojunction bipolar transistors （HBTs） were fully studied in this work, by means of 25-MeV Si, 10-MeV C1,... The degradations in NPN silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) were fully studied in this work, by means of 25-MeV Si, 10-MeV Cl,... |
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| SubjectTerms | Damage Degradation Electric potential Heterojunction bipolar transistors Ion irradiation Semiconductor devices SiGe Silicon germanides Transistors Voltage 半导体 快重离子辐照 总剂量效应 溴离子 电压下降 硅锗异质结双极晶体管 诱导 |
| Title | Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation |
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