Advanced ferroelectric oxide films and heterostructures for unconventional applications

Ferroelectrics, known for their reversible spontaneous electric polarization, have garnered significant interest in both fundamental physics and applications, such as non-volatile memories and sensors. To address the scattered nature of contemporary ferroelectric research, we write this review which...

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Published inAdvances in physics: X Vol. 10; no. 1
Main Authors Huang, Sisi, Ma, Cheng, Jin, Kuijuan
Format Journal Article
LanguageEnglish
Published Taylor & Francis Group 31.12.2025
Subjects
Electric polarization
ferroelectric devices
ferroelectric films
photoelectric applications
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Abstract Ferroelectrics, known for their reversible spontaneous electric polarization, have garnered significant interest in both fundamental physics and applications, such as non-volatile memories and sensors. To address the scattered nature of contemporary ferroelectric research, we write this review which extensively outlines the developments and recent progress on the most studied ferroelectrics, including lead-based and lead-free ferroelectrics, low-dimensional HfO2-based ones, high-entropy relaxor ones, and multiferroics. The tuning methods for these ferroelectrics, including strain, doping, and constructing interfaces, are also systematically discussed. In addition, we also summarize the applications of ferroelectrics, including ferroelectric diodes and ferroelectric tunnel junctions, synaptic devices, domain-wall-based devices, and photoelectric devices, highlighting their significant potential for advanced electronic and optoelectronic devices. This review gives a comprehensive summary of ferroelectrics and offers insights into future research.
AbstractList Ferroelectrics, known for their reversible spontaneous electric polarization, have garnered significant interest in both fundamental physics and applications, such as non-volatile memories and sensors. To address the scattered nature of contemporary ferroelectric research, we write this review which extensively outlines the developments and recent progress on the most studied ferroelectrics, including lead-based and lead-free ferroelectrics, low-dimensional HfO2-based ones, high-entropy relaxor ones, and multiferroics. The tuning methods for these ferroelectrics, including strain, doping, and constructing interfaces, are also systematically discussed. In addition, we also summarize the applications of ferroelectrics, including ferroelectric diodes and ferroelectric tunnel junctions, synaptic devices, domain-wall-based devices, and photoelectric devices, highlighting their significant potential for advanced electronic and optoelectronic devices. This review gives a comprehensive summary of ferroelectrics and offers insights into future research.
Author Ma, Cheng
Jin, Kuijuan
Huang, Sisi
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  givenname: Cheng
  surname: Ma
  fullname: Ma, Cheng
  organization: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China, University of Chinese Academy of Sciences, Beijing, China
– sequence: 3
  givenname: Kuijuan
  surname: Jin
  fullname: Jin, Kuijuan
  organization: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China, University of Chinese Academy of Sciences, Beijing, China
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Snippet Ferroelectrics, known for their reversible spontaneous electric polarization, have garnered significant interest in both fundamental physics and applications,...
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crossref
SourceType Open Website
Index Database
SubjectTerms Electric polarization
ferroelectric devices
ferroelectric films
photoelectric applications
Title Advanced ferroelectric oxide films and heterostructures for unconventional applications
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