APA (7th ed.) Citation

Ma, S., Jiang, J., Zou, L., Lin, J., Lu, N., Zhuo, Z., . . . Li, Q. (2023). Two-dimensional superhard silicon nitrides with widely tunable bandgap, high carrier mobility and hole-doping-induced robust magnetism. Nanoscale, 15(36), 14912-14922. https://doi.org/10.1039/d3nr01466e

Chicago Style (17th ed.) Citation

Ma, Shengqian, Jiaxin Jiang, Lanlan Zou, Jiaqi Lin, Ning Lu, Zhiwen Zhuo, Xiaojun Wu, and Qunxiang Li. "Two-dimensional Superhard Silicon Nitrides with Widely Tunable Bandgap, High Carrier Mobility and Hole-doping-induced Robust Magnetism." Nanoscale 15, no. 36 (2023): 14912-14922. https://doi.org/10.1039/d3nr01466e.

MLA (9th ed.) Citation

Ma, Shengqian, et al. "Two-dimensional Superhard Silicon Nitrides with Widely Tunable Bandgap, High Carrier Mobility and Hole-doping-induced Robust Magnetism." Nanoscale, vol. 15, no. 36, 2023, pp. 14912-14922, https://doi.org/10.1039/d3nr01466e.