Strain-engineering on GeSe: Raman spectroscopy study

• Published in: Physical chemistry chemical physics : PCCP Vol. 23; no. 47; pp. 26997 - 274
• Main Authors: Wang, Jin-Jin, Zhao, Yi-Feng, Zheng, Jun-Ding, Wang, Xiao-Ting, Deng, Xing, Guan, Zhao, Ma, Ru-Ru, Zhong, Ni, Yue, Fang-Yu, Wei, Zhong-Ming, Xiang, Ping-Hua, Duan, Chun-Gang
• Format: Journal Article
• Language: English
• Published: Cambridge Royal Society of Chemistry 08.12.2021
• Subjects: Anisotropy; Control methods; Energy gap; Nanoelectronics; Optical properties; Photoelectric effect; Photoelectricity; Physical properties; Raman spectroscopy; Strain analysis
• DOI: 10.1039/d1cp03721h
• ISSN: 1463-9076; 1463-9084

Among the IV-VI compounds, GeSe has wide applications in nanoelectronics due to its unique photoelectric properties and adjustable band gap. Even though modulation of its physical characteristics, including the band gap, by an external field will be useful for designing novel devices, experimental work is still rare. Here, we report a detailed anisotropic Raman response of GeSe flakes under uniaxial tension strain. Based on theoretical analysis, the anisotropy of the phonon response is attributed to a change in anisotropic bond length and bond angle under in-plane uniaxial strain. An enhancement in anisotropy and band gap is found due to strain along the ZZ or AC directions. This study shows that strain-engineering is an effective method for controlling the GeSe lattice, and paves the way for modulating the anisotropic electric and optical properties of GeSe. GeSe has unique photoelectric properties and an adjustable band gap. We report a detailed anisotropic Raman study of GeSe flakes under uniaxial tension strain. We achieved effective control of the GeSe lattice, modulating its anisotropic electric and optical properties.