APA (7th ed.) Citation

Wang, J., Zhao, Y., Zheng, J., Wang, X., Deng, X., Guan, Z., . . . Duan, C. (2021). Strain-engineering on GeSe: Raman spectroscopy study. Physical chemistry chemical physics : PCCP, 23(47), 26997-274. https://doi.org/10.1039/d1cp03721h

Chicago Style (17th ed.) Citation

Wang, Jin-Jin, et al. "Strain-engineering on GeSe: Raman Spectroscopy Study." Physical Chemistry Chemical Physics : PCCP 23, no. 47 (2021): 26997-274. https://doi.org/10.1039/d1cp03721h.

MLA (9th ed.) Citation

Wang, Jin-Jin, et al. "Strain-engineering on GeSe: Raman Spectroscopy Study." Physical Chemistry Chemical Physics : PCCP, vol. 23, no. 47, 2021, pp. 26997-274, https://doi.org/10.1039/d1cp03721h.