Simulation and design of an X-band overmoded input cavity

The RF input cavity is an important component for velocity-modulating types of microwave device, providing velocity modulation and density modulation. Conventional RF input cavities, however, encounter the problem of power capacity in the high frequency band due to the scaling law of the working fre...

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Published inChinese physics C Vol. 40; no. 6; pp. 80 - 83
Main Author 吴洋 陈永东 赵德奎
Format Journal Article
LanguageEnglish
Published 01.06.2016
Subjects
Devices
Diodes
Holes
Microwaves
Modulation
Simulation
Voltage
X-band
X波段
微波器件
模拟显示
设计
调制类型
谐振特性
输入腔
速度调制
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Abstract The RF input cavity is an important component for velocity-modulating types of microwave device, providing velocity modulation and density modulation. Conventional RF input cavities, however, encounter the problem of power capacity in the high frequency band due to the scaling law of the working frequency and device size. In this paper, an X-band overmoded input cavity is proposed and investigated. A resonant reflector is employed to reflect the microwave and isolate the input cavity from the diode and RF extractor. The resonant property of the overmoded input cavity is proved by simulations and cold tests, with PIC simulation showing that with a beam voltage of 600 kV and current of 7 kA, an input power of 90 kW is sufficient to modulate the beam with a modulation depth of 3%.
AbstractList The RF input cavity is an important component for velocity-modulating types of microwave device, providing velocity modulation and density modulation. Conventional RF input cavities, however, encounter the problem of power capacity in the high frequency band due to the scaling law of the working frequency and device size. In this paper, an X-band overmoded input cavity is proposed and investigated. A resonant reflector is employed to reflect the microwave and isolate the input cavity from the diode and RF extractor. The resonant property of the overmoded input cavity is proved by simulations and cold tests, with PIC simulation showing that with a beam voltage of 600 kV and current of 7 kA, an input power of 90 kW is sufficient to modulate the beam with a modulation depth of 3%.
Author 吴洋 陈永东 赵德奎
AuthorAffiliation Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900, China Sciebce and Technology on High Power Microwave Laboratory, Mianyang 621900, China Sichuan University of Science and Engineering, Zigong 643000, China
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Notes The RF input cavity is an important component for velocity-modulating types of microwave device, providing velocity modulation and density modulation. Conventional RF input cavities, however, encounter the problem of power capacity in the high frequency band due to the scaling law of the working frequency and device size. In this paper, an X-band overmoded input cavity is proposed and investigated. A resonant reflector is employed to reflect the microwave and isolate the input cavity from the diode and RF extractor. The resonant property of the overmoded input cavity is proved by simulations and cold tests, with PIC simulation showing that with a beam voltage of 600 kV and current of 7 kA, an input power of 90 kW is sufficient to modulate the beam with a modulation depth of 3%.
11-5641/O4
Yang Wu, Yong-Dong Chen, De-Kui Zhao（1 Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900, China 2 Sciebce and Technology on High Power Microwave Laboratory, Mianyang 621900, China 3 Sichuan University of Science and Engineering, Zigong 643000, China）
X-band, overmoded input cavity, relativistic klystron amplifier, phase-locked oscillator
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SubjectTerms Devices
Diodes
Holes
Microwaves
Modulation
Simulation
Voltage
X-band
X波段
微波器件
模拟显示
设计
调制类型
谐振特性
输入腔
速度调制
Title Simulation and design of an X-band overmoded input cavity
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Volume 40
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