Influence of compressive strain on the incorporation of indium in InGaN and InAlN ternary alloys

In order to investigate the influence of compressive strain on indium incorporation in In Al N and In Ga N ternary nitrides, In Al N/Ga N heterostructures and In Ga N films were grown by metal–organic chemical vapor deposition. For the heterostructures, different compressive strains are produced by...

Full description

Saved in:
Bibliographic Details
Published inChinese physics B Vol. 24; no. 1; pp. 440 - 443
Main Author 赵一 张进成 薛军帅 周小伟 许晟瑞 郝跃
Format Journal Article
LanguageEnglish
Published 2015
Subjects
Chemical vapor deposition
Compressive properties
Gallium nitrides
Heterostructures
Indium
Indium gallium nitrides
Strain
Ternary alloys
三元合金
化学气相沉积
压缩应变
异质结构
氮化铟镓
蓝宝石衬底
薄膜生长
非均匀分布
Online AccessGet full text

Cover

More Information
Summary:In order to investigate the influence of compressive strain on indium incorporation in In Al N and In Ga N ternary nitrides, In Al N/Ga N heterostructures and In Ga N films were grown by metal–organic chemical vapor deposition. For the heterostructures, different compressive strains are produced by Ga N buffer layers grown on unpatterned and patterned sapphire substrates thanks to the distinct growth mode; while for the In Ga N films, compressive strains are changed by employing Al Ga N templates with different aluminum compositions. By various characterization methods, we find that the compressive strain will hamper the indium incorporation in both In Al N and In Ga N. Furthermore, compressive strain is conducive to suppress the non-uniform distribution of indium in In Ga N ternary alloys.
Bibliography:compressive strain; indium incorporation; InAlN; InGaN
In order to investigate the influence of compressive strain on indium incorporation in In Al N and In Ga N ternary nitrides, In Al N/Ga N heterostructures and In Ga N films were grown by metal–organic chemical vapor deposition. For the heterostructures, different compressive strains are produced by Ga N buffer layers grown on unpatterned and patterned sapphire substrates thanks to the distinct growth mode; while for the In Ga N films, compressive strains are changed by employing Al Ga N templates with different aluminum compositions. By various characterization methods, we find that the compressive strain will hamper the indium incorporation in both In Al N and In Ga N. Furthermore, compressive strain is conducive to suppress the non-uniform distribution of indium in In Ga N ternary alloys.
11-5639/O4
Zhao Yi,Zhang Jin-Cheng,Xue Jun-Shuai,Zhou Xiao-Wei,Xu Sheng-Rui,Hao Yue（ Key Laboratory of Wind Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi＇ an 710071, China）
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/24/1/017302