Effect of phosphorus ion implantation on back gate effect of partially depleted SOI NMOS under total dose radiation
The mechanism of improving the TID radiation hardened ability of partially depleted silicon-oninsulator（SOI） devices by using the back-gate phosphorus ion implantation technology is studied. The electron traps introduced in Si O2 near back Si O2/Si interface by phosphorus ions implantation can offse...
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| Published in | Journal of semiconductors Vol. 36; no. 1; pp. 82 - 85 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
2015
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-4926 |
| DOI | 10.1088/1674-4926/36/1/014006 |
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| Abstract | The mechanism of improving the TID radiation hardened ability of partially depleted silicon-oninsulator（SOI） devices by using the back-gate phosphorus ion implantation technology is studied. The electron traps introduced in Si O2 near back Si O2/Si interface by phosphorus ions implantation can offset positive trapped charges near the back-gate interface. The implanted high concentration phosphorus ions can greatly reduce the back-gate effect of a partially depleted SOI NMOS device, and anti-total-dose radiation ability can reach the level of 1 Mrad（Si） for experimental devices. |
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| AbstractList | The mechanism of improving the TID radiation hardened ability of partially depleted silicon-on-insulator (SOI) devices by using the back-gate phosphorus ion implantation technology is studied. The electron traps introduced in SiO sub(2) near back SiO sub(2)/Si interface by phosphorus ions implantation can offset positive trapped charges near the back-gate interface. The implanted high concentration phosphorus ions can greatly reduce the back-gate effect of a partially depleted SOI NMOS device, and anti-total-dose radiation ability can reach the level of 1 Mrad(Si) for experimental devices. The mechanism of improving the TID radiation hardened ability of partially depleted silicon-oninsulator（SOI） devices by using the back-gate phosphorus ion implantation technology is studied. The electron traps introduced in Si O2 near back Si O2/Si interface by phosphorus ions implantation can offset positive trapped charges near the back-gate interface. The implanted high concentration phosphorus ions can greatly reduce the back-gate effect of a partially depleted SOI NMOS device, and anti-total-dose radiation ability can reach the level of 1 Mrad（Si） for experimental devices. |
| Author | 李蕾蕾 周昕杰 于宗光 封晴 |
| AuthorAffiliation | School of Microelectronics, Xidian University, Xi＇an 710071, China The 58th Research Institute of China Electronics Technology Group Corporation, Wuxi 214035, China |
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| Cites_doi | 10.1109/LED.2003.812547 10.1109/TNS.1987.4337538 10.1088/1674-4926/30/9/093002 10.1109/TNS.2003.812930 10.1109/TNS.2008.2001040 10.1109/101.857747 10.1109/23.273483 10.1109/23.490904 10.7498/aps.60.098502 10.1109/23.340513 10.1063/1.359365 10.1109/23.903752 10.7498/aps.61.206102 |
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| DocumentTitleAlternate | Effect of phosphorus ion implantation on back gate effect of partially depleted SOI NMOS under total dose radiation |
| EndPage | 85 |
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| Notes | The mechanism of improving the TID radiation hardened ability of partially depleted silicon-oninsulator（SOI） devices by using the back-gate phosphorus ion implantation technology is studied. The electron traps introduced in Si O2 near back Si O2/Si interface by phosphorus ions implantation can offset positive trapped charges near the back-gate interface. The implanted high concentration phosphorus ions can greatly reduce the back-gate effect of a partially depleted SOI NMOS device, and anti-total-dose radiation ability can reach the level of 1 Mrad（Si） for experimental devices. 11-5781/TN back gate phosphorus ions implantation total-dose radiation SOI MOS back-gate effect Li Leilei, Zhou Xinjie, Yu Zongguang, and Feng Qing（1 School of Microelectronics, Xidian University, Xi＇an 710071, China; 2 The 58th Research Institute of China Electronics Technology Group Corporation, Wuxi 214035, China） ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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| References | 11 12 13 14 Zhou Xinjie (6) 2012; 61 15 16 Yang Hui (10) 2007; 28 Liu Jie (7) 2008; 29 1 2 3 4 Li Leilei (5) 2011; 60 Hai Chaohe (8) 2006; 27 Zhang Shuai (9) 2009; 30 |
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| Snippet | The mechanism of improving the TID radiation hardened ability of partially depleted silicon-oninsulator（SOI） devices by using the back-gate phosphorus ion... The mechanism of improving the TID radiation hardened ability of partially depleted silicon-on-insulator (SOI) devices by using the back-gate phosphorus ion... |
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| SubjectTerms | Depletion Devices Ion implantation Medical devices Metal oxide semiconductors NMOS器件 Phosphorus Semiconductors Silicon dioxide SOI 总剂量辐射 电子陷阱 硬化能力 磷离子 离子注入技术 背栅效应 |
| Title | Effect of phosphorus ion implantation on back gate effect of partially depleted SOI NMOS under total dose radiation |
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