Progress in research of GaN-based LEDs fabricated on SiC substrate - 徐化勇 陈秀芳 彭燕 徐明升 沈燕 胡小波 徐现刚 (Chinese physics B, 2015)
Keywords: Buffer layers; Dislocation density; Gallium nitrides; GaN薄膜; Nucleation; Residual stress; SiC; Silicon carbide; Silicon substrates; Thin films; 制造; 发光二极管; 生长条件; 电光转换效率; 碳化硅衬底; 芯片结构