Progress in research of GaN-based LEDs fabricated on SiC substrate

The influence of buffer layer growth conditions on the crystal quality and residual stress of GaN film grown on silicon carbide substrate is investigated. It is found that the A1GaN nucleation layer with high growth temperature can efficiently decrease the dislocation density and stress of the GaN f...

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Published inChinese physics B Vol. 24; no. 6; pp. 31 - 38
Main Author 徐化勇 陈秀芳 彭燕 徐明升 沈燕 胡小波 徐现刚
Format Journal Article
LanguageEnglish
Published 01.06.2015
Subjects
Buffer layers
Dislocation density
Gallium nitrides
GaN薄膜
Nucleation
Residual stress
SiC
Silicon carbide
Silicon substrates
Thin films
制造
发光二极管
生长条件
电光转换效率
碳化硅衬底
芯片结构
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Summary:The influence of buffer layer growth conditions on the crystal quality and residual stress of GaN film grown on silicon carbide substrate is investigated. It is found that the A1GaN nucleation layer with high growth temperature can efficiently decrease the dislocation density and stress of the GaN film compared with A1N buffer layer. To increase the light extraction efficiency of GaN-based LEDs on SiC substrate, flip-chip structure and thin film flip-chip structure were designed and optimized. The fabricated blue LED had a maximum wall-plug efficiency of 72% at 80 mA. At 350 mA, the output power, the Vf, the dominant wavelength, and the wall-plug efficiency of the blue LED were 644 roW, 2.95 V, 460 nm, and 63%, respectively.
Bibliography:SiC, GaN, A1GaN buffer, light emitting diode, flip chip, light extraction efficiency
The influence of buffer layer growth conditions on the crystal quality and residual stress of GaN film grown on silicon carbide substrate is investigated. It is found that the A1GaN nucleation layer with high growth temperature can efficiently decrease the dislocation density and stress of the GaN film compared with A1N buffer layer. To increase the light extraction efficiency of GaN-based LEDs on SiC substrate, flip-chip structure and thin film flip-chip structure were designed and optimized. The fabricated blue LED had a maximum wall-plug efficiency of 72% at 80 mA. At 350 mA, the output power, the Vf, the dominant wavelength, and the wall-plug efficiency of the blue LED were 644 roW, 2.95 V, 460 nm, and 63%, respectively.
11-5639/O4
Xu Hua-Yong, Chen Xiu-Fang, Peng Yan, Xu Ming-Sheng, Shen Yan. Hu Xiao-Bo, and Xu Xian-Gang（ a） state Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China b ） School of Physics, Shandong University, Jinan 250100, China c） shandong Inspur Huaguang Optoelectronics Co., Ltd, Jinan 250100, China
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/24/6/067305