Fabrication and characterization of the normally,off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors

• Published in: Chinese physics B Vol. 25; no. 3; pp. 362 - 365
• Main Author: 宋庆文 汤晓燕 何艳静 唐冠男 王悦湖 张艺蒙 郭辉 贾仁需 吕红亮 张义门 张玉明
• Format: Journal Article
• Language: English
• Published: 01.03.2016
• Subjects: 4H-SiC; Breakdown; C-V曲线; Channels; Density; Dielectrics; Field effect transistors; Hysteresis; N沟道; Oxides; Semiconductor devices; 制备; 场效应迁移率; 碳化硅; 表征; 金属氧化物半导体场效应晶体管

In this paper, the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors （MOSF- FETs） have been fabricated and characterized. A sandwich- （nitridation-oxidation-nitridation） type process was used to grow the gate dielectric film to obtain high channel mobility. The...