Fabrication and characterization of the normally,off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors - 宋庆文 汤晓燕 何艳静 唐冠男 王悦湖 张艺蒙 郭辉 贾仁需 吕红亮 张义门 张玉明 (Chinese physics B, 2016)
Keywords: 4H-SiC; Breakdown; C-V曲线; Channels; Density; Dielectrics; Field effect transistors; Hysteresis; N沟道; Oxides; Semiconductor devices; 制备; 场效应迁移率; 碳化硅; 表征; 金属氧化物半导体场效应晶体管