Single-Photon Emission from GaAs Quantum Dots Embedded in Nanowires
A highly efficient single-photon source based on a semiconductor quantum dot (QD) is a promising candidate in quantum information processing. We report a single-photon source based on self-assembled GaAs QDs in nanowires with an extraction efficiency of 14%. The second-order correlation function g(2...
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Published in | Chinese physics letters Vol. 32; no. 7; pp. 198 - 201 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
01.07.2015
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Subjects | |
Online Access | Get full text |
ISSN | 0256-307X 1741-3540 |
DOI | 10.1088/0256-307X/32/7/077804 |
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Summary: | A highly efficient single-photon source based on a semiconductor quantum dot (QD) is a promising candidate in quantum information processing. We report a single-photon source based on self-assembled GaAs QDs in nanowires with an extraction efficiency of 14%. The second-order correlation function g(2) (0) at saturate excitation power is estimated to be 0.28. The measured polarization of QD emission depends on the geometric relations between the directions of PL collection and the long axis of nanowires. |
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Bibliography: | 11-1959/O4 A highly efficient single-photon source based on a semiconductor quantum dot (QD) is a promising candidate in quantum information processing. We report a single-photon source based on self-assembled GaAs QDs in nanowires with an extraction efficiency of 14%. The second-order correlation function g(2) (0) at saturate excitation power is estimated to be 0.28. The measured polarization of QD emission depends on the geometric relations between the directions of PL collection and the long axis of nanowires. YANG Shuang, DOU Xiu-Ming, YU Ying, NI Hai-Qiao, Mu Zhi-Chuan, JIANG De-Sheng, SUN Bao-Quan( State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083) ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0256-307X 1741-3540 |
DOI: | 10.1088/0256-307X/32/7/077804 |