Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC

We have investigated the electron affinity of Si-doped AlN films（N_（Si）= 1.0 × 10~（18）–1.0 × 10_（19）cm~（-3）） with thicknesses of 50, 200, and 400 nm, synthesized by metalorganic chemical vapor deposition（MOCVD） under low pressure on the ntype（001）6H–SiC substrates. The positive and small electron af...

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Published inChinese physics B Vol. 25; no. 5; pp. 369 - 372
Main Author 梁锋 陈平 赵德刚 江德生 赵志娟 刘宗顺 朱建军 杨静 刘炜 何晓光 李晓静 李翔 刘双韬 杨辉 张立群 刘建平 张源涛 杜国同
Format Journal Article
LanguageEnglish
Published 01.05.2016
Subjects
AlN薄膜
Aluminum nitride
Contamination
Electron affinity
Low pressure
Metalorganic chemical vapor deposition
Photoelectron spectroscopy
SiC
Silicon substrates
Si掺杂
X-ray photoelectron spectroscopy
X射线光电子能谱
电子亲和力
紫外光电子能谱
金属有机化学气相沉积
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Summary:We have investigated the electron affinity of Si-doped AlN films（N_（Si）= 1.0 × 10~（18）–1.0 × 10_（19）cm~（-3）） with thicknesses of 50, 200, and 400 nm, synthesized by metalorganic chemical vapor deposition（MOCVD） under low pressure on the ntype（001）6H–SiC substrates. The positive and small electron affinity of AlN films was observed through the ultraviolet photoelectron spectroscopy（UPS） analysis, where an increase in electron affinity appears with the thickness of AlN films increasing, i.e., 0.36 eV for the 50-nm-thick one, 0.58 eV for the 200-nm-thick one, and 0.97 e V for the 400-nm-thick one.Accompanying the x-ray photoelectron spectroscopy（XPS） analysis on the surface contaminations, it suggests that the difference of electron affinity between our three samples may result from the discrepancy of surface impurity contaminations.
Bibliography:Feng Liang, Ping Chen, De-Gang Zhao, De-Sheng Jiang, Zhi-Juan Zhao, Zong-Shun Liu, Jian-Jun Zhu, Jing Yang, Wei Liu, Xiao-Guang He, Xiao-Jing Li, Xiang Li, Shuang-Tao Liu, Hui Yang, Li-Qun Zhang, Jian-Ping Liu, Yuan-Tao Zhang, and Guo-Tong Du（ 1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 2 Center for Physicochemical Analysis and Measurement, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China 3 Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China 4 State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, China）
AlN; electron affinity; photoelectron spectroscopy; metalorganic chemical vapor deposition
11-5639/O4
We have investigated the electron affinity of Si-doped AlN films（N_（Si）= 1.0 × 10~（18）–1.0 × 10_（19）cm~（-3）） with thicknesses of 50, 200, and 400 nm, synthesized by metalorganic chemical vapor deposition（MOCVD） under low pressure on the ntype（001）6H–SiC substrates. The positive and small electron affinity of AlN films was observed through the ultraviolet photoelectron spectroscopy（UPS） analysis, where an increase in electron affinity appears with the thickness of AlN films increasing, i.e., 0.36 eV for the 50-nm-thick one, 0.58 eV for the 200-nm-thick one, and 0.97 e V for the 400-nm-thick one.Accompanying the x-ray photoelectron spectroscopy（XPS） analysis on the surface contaminations, it suggests that the difference of electron affinity between our three samples may result from the discrepancy of surface impurity contaminations.
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/25/5/057703