Metal-organic-vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes - 汪莱 杨迪 郝智彪 罗毅 (Chinese physics B, 2015)
Keywords: Epitaxy; Indium gallium nitrides; InGaN; Light-emitting diodes; Monitoring; MOVPE; Optoelectronics; Quantum dots; Semiconductors; 光电子材料; 发光二极管; 应用程序; 汽相外延; 量子点; 金属