A novel lateral cavity surface emitting laser with top sub-wavelength grating

We report a novel lateral cavity surface emitting laser based on sub-wavelength high-index-contrast grating with in-plane resonance and surface-normal emission. The device is fabricated on a simple commercial wafer without the distributed Bragg reflector and it needs no wafer bonding. It exhibits a...

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Published inJournal of semiconductors Vol. 36; no. 1; pp. 108 - 112
Main Author 齐爱谊 王宇飞 郭小杰 郑婉华
Format Journal Article
LanguageEnglish
Published 2015
Subjects
Bragg reflectors
Holes
Lasing
Noise levels
Semiconductors
Surface emitting lasers
Three dimensional
Wafers
单模激光
布拉格反射器
模式计算
边模抑制比
长光栅
面发射激光器
高折射率
高输出功率
Online AccessGet full text
ISSN1674-4926
DOI10.1088/1674-4926/36/1/014012

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Abstract We report a novel lateral cavity surface emitting laser based on sub-wavelength high-index-contrast grating with in-plane resonance and surface-normal emission. The device is fabricated on a simple commercial wafer without the distributed Bragg reflector and it needs no wafer bonding. It exhibits a side mode suppression ratio of 23.0 d B and a high output power of 5.32 m W at 1552.44 nm. The specific single mode lasing agrees well with the band edge mode calculation of the grating. In 3D simulation, we observe obvious light output from the grating.
AbstractList We report a novel lateral cavity surface emitting laser based on sub-wavelength high-index-contrast grating with in-plane resonance and surface-normal emission. The device is fabricated on a simple commercial wafer without the distributed Bragg reflector and it needs no wafer bonding. It exhibits a side mode suppression ratio of 23.0 d B and a high output power of 5.32 m W at 1552.44 nm. The specific single mode lasing agrees well with the band edge mode calculation of the grating. In 3D simulation, we observe obvious light output from the grating.
We report a novel lateral cavity surface emitting laser based on sub-wavelength high-index-contrast grating with in-plane resonance and surface-normal emission. The device is fabricated on a simple commercial wafer without the distributed Bragg reflector and it needs no wafer bonding. It exhibits a side mode suppression ratio of 23.0 dB and a high output power of 5.32 mW at 1552.44 nm. The specific single mode lasing agrees well with the band edge mode calculation of the grating. In 3D simulation, we observe obvious light output from the grating.
Author 齐爱谊 王宇飞 郭小杰 郑婉华
AuthorAffiliation State key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, China Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academyof Sciences, Beijing 100083, China
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Cites_doi 10.1038/nphoton.2006.80
10.1364/OE.21.008844
10.1063/1.4789535
10.1109/LPT.2003.821258
10.1364/OL.36.004140
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We report a novel lateral cavity surface emitting laser based on sub-wavelength high-index-contrast grating with in-plane resonance and surface-normal emission. The device is fabricated on a simple commercial wafer without the distributed Bragg reflector and it needs no wafer bonding. It exhibits a side mode suppression ratio of 23.0 d B and a high output power of 5.32 m W at 1552.44 nm. The specific single mode lasing agrees well with the band edge mode calculation of the grating. In 3D simulation, we observe obvious light output from the grating.
photonic crystal surface emitting laser grating
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SubjectTerms Bragg reflectors
Holes
Lasing
Noise levels
Semiconductors
Surface emitting lasers
Three dimensional
Wafers
单模激光
布拉格反射器
模式计算
边模抑制比
长光栅
面发射激光器
高折射率
高输出功率
Title A novel lateral cavity surface emitting laser with top sub-wavelength grating
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