Stability of Cu/Ir/Si trilayer structure to moderate annealing
The properties and behavior of trilayer structures consisting of ultrathin iridium thin films sandwiched between Cu and Si have been examined. Iridium thin films (5 nm thick) were deposited on Si substrates using magnetron sputtering, followed by in situ deposition of Cu. The film stacks were examin...
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Published in | Materials science in semiconductor processing Vol. 12; no. 4; pp. 151 - 155 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
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Abstract | The properties and behavior of trilayer structures consisting of ultrathin iridium thin films sandwiched between Cu and Si have been examined. Iridium thin films (5
nm thick) were deposited on Si substrates using magnetron sputtering, followed by in situ deposition of Cu. The film stacks were examined both as-deposited and after annealing in vacuum over a temperature range of 300–600
°C for 1
h. X-ray diffraction indicates that there is no copper silicide formation upon annealing up to 400
°C. Cross-section HRTEM and EDS line-scans on the sample annealed at 400
°C show the out-diffusion of iridium and the onset of copper diffusion across the interface. The results indicate that iridium is moderately effective as a copper diffusion barrier so long as the processing temperatures remain relatively low. |
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AbstractList | The properties and behavior of trilayer structures consisting of ultrathin iridium thin films sandwiched between Cu and Si have been examined. Iridium thin films (5 nm thick) were deposited on Si substrates using magnetron sputtering, followed by in situ deposition of Cu. The film stacks were examined both as-deposited and after annealing in vacuum over a temperature range of 300-600 degree C for 1 h. X-ray diffraction indicates that there is no copper silicide formation upon annealing up to 400 degree C. Cross-section HRTEM and EDS line-scans on the sample annealed at 400 degree C show the out-diffusion of iridium and the onset of copper diffusion across the interface. The results indicate that iridium is moderately effective as a copper diffusion barrier so long as the processing temperatures remain relatively low. The properties and behavior of trilayer structures consisting of ultrathin iridium thin films sandwiched between Cu and Si have been examined. Iridium thin films (5 nm thick) were deposited on Si substrates using magnetron sputtering, followed by in situ deposition of Cu. The film stacks were examined both as-deposited and after annealing in vacuum over a temperature range of 300–600 °C for 1 h. X-ray diffraction indicates that there is no copper silicide formation upon annealing up to 400 °C. Cross-section HRTEM and EDS line-scans on the sample annealed at 400 °C show the out-diffusion of iridium and the onset of copper diffusion across the interface. The results indicate that iridium is moderately effective as a copper diffusion barrier so long as the processing temperatures remain relatively low. |
Author | Leu, L.C. McElwee-White, L. Anderson, T.J. Norton, D.P. |
Author_xml | – sequence: 1 givenname: L.C. surname: Leu fullname: Leu, L.C. organization: Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA – sequence: 2 givenname: D.P. surname: Norton fullname: Norton, D.P. email: dnort@mse.ufl.edu organization: Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA – sequence: 3 givenname: T.J. surname: Anderson fullname: Anderson, T.J. organization: Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA – sequence: 4 givenname: L. surname: McElwee-White fullname: McElwee-White, L. organization: Department of Chemistry, University of Florida, Gainesville, Florida 32611, USA |
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Keywords | Diffusion barrier Cu-interconnects Iridium Ultrathin films Annealing Material processing Stacking sequence Stacking In situ Sandwich structure Multiple layer X ray diffraction Thin film Transmission electron microscopy Energy dispersion Interconnection Integrated circuit Silicon Cathodic sputtering Copper Diffusion Interface |
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Snippet | The properties and behavior of trilayer structures consisting of ultrathin iridium thin films sandwiched between Cu and Si have been examined. Iridium thin... |
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SubjectTerms | Annealing Applied sciences Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures Compound structure devices Copper Cross-disciplinary physics: materials science; rheology Cu-interconnects Deposition Deposition by sputtering Diffusion barrier Electronics Exact sciences and technology Heat treatment Iridium Magnetron sputtering Materials science Metals. Metallurgy Methods of deposition of films and coatings; film growth and epitaxy Physics Production techniques Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Silicon Thin films Treatment of materials and its effects on microstructure and properties |
Title | Stability of Cu/Ir/Si trilayer structure to moderate annealing |
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