CMOS mm-wave transceivers for Gbps wireless communication

The challenges in the design of CMOS millimeter-wave （mm-wave） transceiver for Gbps wireless com- munication are discussed. To support the Gbps data rate, the link bandwidth of the receiver/transmitter must be wide enough, which puts a lot of pressure on the mm-wave front-end as well as on the baseb...

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Bibliographic Details
Published inJournal of semiconductors Vol. 37; no. 7; pp. 1 - 11
Main Author 池保勇 宋政 况立雪 贾海昆 孟祥雨 王志华
Format Journal Article
LanguageEnglish
Published 01.07.2016
Subjects
Amplifiers
Bandwidth
CMOS
Electric potential
Gbps
Links
Semiconductors
Transceivers
Wireless communication
收发器
数据传输速率
无线通信
毫米波放大器
程控增益放大器
链路带宽
Online AccessGet full text
ISSN1674-4926
DOI10.1088/1674-4926/37/7/071001

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Summary:The challenges in the design of CMOS millimeter-wave （mm-wave） transceiver for Gbps wireless com- munication are discussed. To support the Gbps data rate, the link bandwidth of the receiver/transmitter must be wide enough, which puts a lot of pressure on the mm-wave front-end as well as on the baseband circuit. This paper discusses the effects of the limited link bandwidth on the transceiver system performance and overviews the band- width expansion techniques for mm-wave amplifiers and IF programmable gain amplifier. Furthermore, dual-mode power amplifier （PA） and self-healing technique are introduced to improve the PA＇s average efficiency and to deal with the process, voltage, and temperature variation issue, respectively. Several fully-integrated CMOS mm-wave transceivers are also presented to give a short overview on the state-of-the-art mm-wave transceivers.
Bibliography:The challenges in the design of CMOS millimeter-wave （mm-wave） transceiver for Gbps wireless com- munication are discussed. To support the Gbps data rate, the link bandwidth of the receiver/transmitter must be wide enough, which puts a lot of pressure on the mm-wave front-end as well as on the baseband circuit. This paper discusses the effects of the limited link bandwidth on the transceiver system performance and overviews the band- width expansion techniques for mm-wave amplifiers and IF programmable gain amplifier. Furthermore, dual-mode power amplifier （PA） and self-healing technique are introduced to improve the PA＇s average efficiency and to deal with the process, voltage, and temperature variation issue, respectively. Several fully-integrated CMOS mm-wave transceivers are also presented to give a short overview on the state-of-the-art mm-wave transceivers.
Chi Baoyong, Song Zheng, Kuang Lixue, Jia Haikun, Meng Xiangyu, and Wang Zhihua（Institute of Microelectronics ＆ Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084, China）
mm-wave integrated circuit; transceiver; CMOS; wireless communication; wide-band; power ampli-fier
11-5781/TN
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ISSN:1674-4926
DOI:10.1088/1674-4926/37/7/071001