Effect of In Diffusion on the Property of Blue Light-Emitting Diodes
In diffusion to blue light-emitting diode （LED） wafers is performed by the inductive coupled plasma （ICP） treatment of a covering layer of indium tin oxide （ITO） on the wafer surface. The electrical property of the p- type contact is improved and the redshift of photoluminescence （PL） from the InGaN...
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| Published in | Chinese physics letters Vol. 32; no. 6; pp. 80 - 83 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.06.2015
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| Subjects | |
| Online Access | Get full text |
| ISSN | 0256-307X 1741-3540 |
| DOI | 10.1088/0256-307X/32/6/064207 |
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| Abstract | In diffusion to blue light-emitting diode （LED） wafers is performed by the inductive coupled plasma （ICP） treatment of a covering layer of indium tin oxide （ITO） on the wafer surface. The electrical property of the p- type contact is improved and the redshift of photoluminescence （PL） from the InGaN quantum well of the wafer is found. Measurements by x-ray photoelectron spectroscopy （XPS） demonstrate that In atoms have diffused into p-GaN. Reflectance spectra of the sample surface reveal the variation caused by the ICP treatment. A model of compensation of the in-plane strain of the InGaN layer is used to explain the redshift of the PL data. Finally, LEDs are fabricated by using as-grown and ICP-treated wafers and their properties are compared. Under an injection current of 20mA, LEDs with ICP-induced In doping show a decrease of 0.3 V in the forward voltage and an increase of 23% in the light output, respectively. |
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| AbstractList | In diffusion to blue light-emitting diode (LED) wafers is performed by the inductive coupled plasma (ICP) treatment of a covering layer of indium tin oxide (ITO) on the wafer surface. The electrical property of the p-type contact is improved and the redshift of photoluminescence (PL) from the InGaN quantum well of the wafer is found. Measurements by x-ray photoelectron spectroscopy (XPS) demonstrate that In atoms have diffused into p-GaN. Reflectance spectra of the sample surface reveal the variation caused by the ICP treatment. A model of compensation of the in-plane strain of the InGaN layer is used to explain the redshift of the PL data. Finally, LEDs are fabricated by using as-grown and ICP-treated wafers and their properties are compared. Under an injection current of 20 mA, LEDs with ICP-induced In doping show a decrease of 0.3 V in the forward voltage and an increase of 23% in the light output, respectively. In diffusion to blue light-emitting diode （LED） wafers is performed by the inductive coupled plasma （ICP） treatment of a covering layer of indium tin oxide （ITO） on the wafer surface. The electrical property of the p- type contact is improved and the redshift of photoluminescence （PL） from the InGaN quantum well of the wafer is found. Measurements by x-ray photoelectron spectroscopy （XPS） demonstrate that In atoms have diffused into p-GaN. Reflectance spectra of the sample surface reveal the variation caused by the ICP treatment. A model of compensation of the in-plane strain of the InGaN layer is used to explain the redshift of the PL data. Finally, LEDs are fabricated by using as-grown and ICP-treated wafers and their properties are compared. Under an injection current of 20mA, LEDs with ICP-induced In doping show a decrease of 0.3 V in the forward voltage and an increase of 23% in the light output, respectively. |
| Author | 曾勇平 刘文杰 翁国恩 赵婉茹 左海杰 余健 张江勇 应磊莹 张保平 |
| AuthorAffiliation | Optoelectronics Engineering Research Center, Department of Electronic Engineering, Xiamen University, Xiamen 361005 Department of Physics, Xiamen University, Xiamen 361005 |
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| Cites_doi | 10.1109/55.998863 10.1016/S0040-6090(01)01368-2 10.1063/1.124928 10.1116/1.1589514 10.1063/1.1360784 10.1063/1.3367725 10.1063/1.1545155 10.1007/BF00631118 10.1063/1.114359 10.1143/JJAP.25.1628 10.1063/1.1592306 10.1143/JJAP.31.L139 10.1063/1.1695436 10.1063/1.372154 10.1063/1.1486259 10.1103/PhysRevB.54.13460 10.1109/PROC.1968.6273 10.1063/1.1319505 10.1002/1521-3951(200111)228:2<375::AID-PSSB375>3.0.CO;2-A 10.1103/PhysRevB.62.16870 10.1063/1.123954 |
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| DocumentTitleAlternate | Effect of In Diffusion on the Property of Blue Light-Emitting Diodes |
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| Notes | ZENG Yong-Ping, LIU Wen-Jie, WENG Guo-En, ZHAO Wan-Ru, ZUO Hai-Jie, YU Jian, ZHANG Jiang-Yong, YING Lei-Ying, ZHANG Bao-Ping（1Optoelectronics Engineering Research Center, Department of Electronic Engineering, Xiamen University, Xiamen 361005; 2Department of Physics, Xiamen University, Xiamen 361005） 11-1959/O4 In diffusion to blue light-emitting diode （LED） wafers is performed by the inductive coupled plasma （ICP） treatment of a covering layer of indium tin oxide （ITO） on the wafer surface. The electrical property of the p- type contact is improved and the redshift of photoluminescence （PL） from the InGaN quantum well of the wafer is found. Measurements by x-ray photoelectron spectroscopy （XPS） demonstrate that In atoms have diffused into p-GaN. Reflectance spectra of the sample surface reveal the variation caused by the ICP treatment. A model of compensation of the in-plane strain of the InGaN layer is used to explain the redshift of the PL data. Finally, LEDs are fabricated by using as-grown and ICP-treated wafers and their properties are compared. Under an injection current of 20mA, LEDs with ICP-induced In doping show a decrease of 0.3 V in the forward voltage and an increase of 23% in the light output, respectively. ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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| References | 22 23 24 26 Fujiwara Y (25) 1986; 25 Liu K T (11) 2009; 48 Xu Z Y (12) 2010; 27 10 13 14 15 16 Wu L L (8) 2012; 27 17 18 Cao W Y (2) 2013; 22 19 Ling M M (4) 2014; 23 1 3 5 7 Nakamura S (6) 1992; 31 9 20 21 |
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| Snippet | In diffusion to blue light-emitting diode （LED） wafers is performed by the inductive coupled plasma （ICP） treatment of a covering layer of indium tin oxide... In diffusion to blue light-emitting diode (LED) wafers is performed by the inductive coupled plasma (ICP) treatment of a covering layer of indium tin oxide... |
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| SubjectTerms | Compensation Diffusion Indium gallium nitrides Indium tin oxide Inductively coupled plasma LED显示 Light-emitting diodes Red shift Wafers X射线光电子能谱 原子扩散 性能 电感耦合等离子体 等离子体处理 蓝光发光二极管 蓝色发光二极管 |
| Title | Effect of In Diffusion on the Property of Blue Light-Emitting Diodes |
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