Effect of In Diffusion on the Property of Blue Light-Emitting Diodes

In diffusion to blue light-emitting diode （LED） wafers is performed by the inductive coupled plasma （ICP） treatment of a covering layer of indium tin oxide （ITO） on the wafer surface. The electrical property of the p- type contact is improved and the redshift of photoluminescence （PL） from the InGaN...

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Bibliographic Details
Published inChinese physics letters Vol. 32; no. 6; pp. 80 - 83
Main Author 曾勇平 刘文杰 翁国恩 赵婉茹 左海杰 余健 张江勇 应磊莹 张保平
Format Journal Article
LanguageEnglish
Published 01.06.2015
Subjects
Compensation
Diffusion
Indium gallium nitrides
Indium tin oxide
Inductively coupled plasma
LED显示
Light-emitting diodes
Red shift
Wafers
X射线光电子能谱
原子扩散
性能
电感耦合等离子体
等离子体处理
蓝光发光二极管
蓝色发光二极管
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ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/32/6/064207

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Summary:In diffusion to blue light-emitting diode （LED） wafers is performed by the inductive coupled plasma （ICP） treatment of a covering layer of indium tin oxide （ITO） on the wafer surface. The electrical property of the p- type contact is improved and the redshift of photoluminescence （PL） from the InGaN quantum well of the wafer is found. Measurements by x-ray photoelectron spectroscopy （XPS） demonstrate that In atoms have diffused into p-GaN. Reflectance spectra of the sample surface reveal the variation caused by the ICP treatment. A model of compensation of the in-plane strain of the InGaN layer is used to explain the redshift of the PL data. Finally, LEDs are fabricated by using as-grown and ICP-treated wafers and their properties are compared. Under an injection current of 20mA, LEDs with ICP-induced In doping show a decrease of 0.3 V in the forward voltage and an increase of 23% in the light output, respectively.
Bibliography:ZENG Yong-Ping, LIU Wen-Jie, WENG Guo-En, ZHAO Wan-Ru, ZUO Hai-Jie, YU Jian, ZHANG Jiang-Yong, YING Lei-Ying, ZHANG Bao-Ping（1Optoelectronics Engineering Research Center, Department of Electronic Engineering, Xiamen University, Xiamen 361005; 2Department of Physics, Xiamen University, Xiamen 361005）
11-1959/O4
In diffusion to blue light-emitting diode （LED） wafers is performed by the inductive coupled plasma （ICP） treatment of a covering layer of indium tin oxide （ITO） on the wafer surface. The electrical property of the p- type contact is improved and the redshift of photoluminescence （PL） from the InGaN quantum well of the wafer is found. Measurements by x-ray photoelectron spectroscopy （XPS） demonstrate that In atoms have diffused into p-GaN. Reflectance spectra of the sample surface reveal the variation caused by the ICP treatment. A model of compensation of the in-plane strain of the InGaN layer is used to explain the redshift of the PL data. Finally, LEDs are fabricated by using as-grown and ICP-treated wafers and their properties are compared. Under an injection current of 20mA, LEDs with ICP-induced In doping show a decrease of 0.3 V in the forward voltage and an increase of 23% in the light output, respectively.
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ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/32/6/064207