Black Silicon IR Photodiode Supersaturated With Nitrogen by Femtosecond Laser Irradiation

• Published in: IEEE sensors journal Vol. 18; no. 9; pp. 3595 - 3601
• Main Authors: Li, Chun-Hao, Wang, Xue-Peng, Zhao, Ji-Hong, Zhang, De-Zhong, Yu, Xin-Yue, Li, Xian-Bin, Feng, Jing, Chen, Qi-Dai, Ruan, Sheng-Ping, Sun, Hong-Bo
• Format: Journal Article
• Language: English
• Published: IEEE 01.05.2018
• Subjects: Absorption; Annealing; black silicon; Femtosecond laser; first-principles calculation; infrared detection; Lasers; Nitrogen; nitrogen doping; Photodiodes; Silicon; Substrates

Micro-ripple and micro-bead structures are formed on a silicon (Si) surface after irradiation with femtosecond laser pulses in nitrogen (N 2 ) atmosphere. Simultaneously, supersaturated nitrogen (N) atoms, with a concentration above 10 20 cm -3 , are doped into the textured black Si layer via laser...