叶甜春, 马. 杨. 王. 殷. 朱. 赵. 陈. (2014). An effective work-function tuning method of nMOSCAP with high-k/metal gate by TiN/TaN double-layer stack thickness. Journal of semiconductors, 35(9), 162-165. https://doi.org/10.1088/1674-4926/35/9/096001
Chicago Style (17th ed.) Citation叶甜春, 马雪丽 杨红 王文武 殷华湘 朱慧珑 赵超 陈大鹏. "An Effective Work-function Tuning Method of NMOSCAP with High-k/metal Gate by TiN/TaN Double-layer Stack Thickness." Journal of Semiconductors 35, no. 9 (2014): 162-165. https://doi.org/10.1088/1674-4926/35/9/096001.
MLA (9th ed.) Citation叶甜春, 马雪丽 杨红 王文武 殷华湘 朱慧珑 赵超 陈大鹏. "An Effective Work-function Tuning Method of NMOSCAP with High-k/metal Gate by TiN/TaN Double-layer Stack Thickness." Journal of Semiconductors, vol. 35, no. 9, 2014, pp. 162-165, https://doi.org/10.1088/1674-4926/35/9/096001.