Synthesis and Properties of Lead Zirconate Titanate Thin Films Via Metalorganic Chemical Vapor Deposition
Ferroelectric PZT thin films were deposited on Pt and SrRuO3 substrates in a cold-wall reactor, using the Pb(C2H5)4/Zr(OBu)4/Ti(OPri)4/O2 reaction system. In comparison with Pt substrate, the growth rate of lead zirconate titanate (PZT) thin film was higher on SrRuO3. Lead content of the thin film d...
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Published in | Journal of materials research Vol. 17; no. 6; pp. 1536 - 1542 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
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New York, USA
Cambridge University Press
01.06.2002
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Abstract | Ferroelectric PZT thin films were deposited on Pt and SrRuO3 substrates in a cold-wall reactor, using the Pb(C2H5)4/Zr(OBu)4/Ti(OPri)4/O2 reaction system. In comparison with Pt substrate, the growth rate of lead zirconate titanate (PZT) thin film was higher on SrRuO3. Lead content of the thin film deposited on either substrate at low temperatures (723–863 K) was much more temperature dependent than the other two metal contents. The strong temperature dependence originated from the high activation energy in the initial decomposition of Pb(C2H5)4 vapor, which was 54 kcal/mol. The surface reaction constant of lead precursor had much lower temperature dependence. The activation energy of surface reaction for PbO, estimated from deposition in a mini-chamber, was 6 kcal/mol on Pt and 9 kcal/mol on the SrRuO3 substrate. Therefore, the incorporation path of component oxide PbO, whose apparent activation energy was 31 kcal/mol on Pt and 29 kcal/mol on SrRuO3, essentially involved considerable gas-phase reaction. The PZT (50/50) thin film on SrRuO3 bottom electrode possessed a lower coercive field and a smaller remnant polarization than that on Pt. The PZT capacitor on SrRuO3 was also less vulnerable to polarization fatigue. |
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AbstractList | Ferroelectric PZT thin films were deposited on Pt and SrRuO3 substrates in a cold-wall reactor, using the Pb(C
2
H
5
)
4
/Zr(OBu)
4
/Ti(OPr
i
)
4
/O
2
reaction system. In comparison with Pt substrate, the growth rate of lead zirconate titanate (PZT) thin film was higher on SrRuO
3
. Lead content of the thin film deposited on either substrate at low temperatures (723–863 K) was much more temperature dependent than the other two metal contents. The strong temperature dependence originated from the high activation energy in the initial decomposition of Pb(C
2
H
5
)
4
vapor, which was 54 kcal/mol. The surface reaction constant of lead precursor had much lower temperature dependence. The activation energy of surface reaction for PbO, estimated from deposition in a mini-chamber, was 6 kcal/mol on Pt and 9 kcal/mol on the SrRuO
3
substrate. Therefore, the incorporation path of component oxide PbO, whose apparent activation energy was 31 kcal/mol on Pt and 29 kcal/mol on SrRuO
3
, essentially involved considerable gas-phase reaction. The PZT (50/50) thin film on SrRuO
3
bottom electrode possessed a lower coercive field and a smaller remnant polarization than that on Pt. The PZT capacitor on SrRuO
3
was also less vulnerable to polarization fatigue. Ferroelectric PZT thin films were deposited on Pt and SrRuO3 substrates in a cold-wall reactor, using the Pb(C2H5)4/Zr(OBu)4/Ti(OPri)4/O2 reaction system. In comparison with Pt substrate, the growth rate of lead zirconate titanate (PZT) thin film was higher on SrRuO3. Lead content of the thin film deposited on either substrate at low temperatures (723–863 K) was much more temperature dependent than the other two metal contents. The strong temperature dependence originated from the high activation energy in the initial decomposition of Pb(C2H5)4 vapor, which was 54 kcal/mol. The surface reaction constant of lead precursor had much lower temperature dependence. The activation energy of surface reaction for PbO, estimated from deposition in a mini-chamber, was 6 kcal/mol on Pt and 9 kcal/mol on the SrRuO3 substrate. Therefore, the incorporation path of component oxide PbO, whose apparent activation energy was 31 kcal/mol on Pt and 29 kcal/mol on SrRuO3, essentially involved considerable gas-phase reaction. The PZT (50/50) thin film on SrRuO3 bottom electrode possessed a lower coercive field and a smaller remnant polarization than that on Pt. The PZT capacitor on SrRuO3 was also less vulnerable to polarization fatigue. |
Author | Tsai, Dah-Shyang Chen, Yin-Lang Pan, Chih-Yi |
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CitedBy_id | crossref_primary_10_1016_j_matchemphys_2003_12_005 crossref_primary_10_1109_JMEMS_2012_2221682 crossref_primary_10_1088_0964_1726_22_8_085013 crossref_primary_10_1088_2043_6262_2_1_015005 crossref_primary_10_1080_00150190600946062 crossref_primary_10_1016_j_poly_2019_114270 crossref_primary_10_1088_0960_1317_20_8_085022 crossref_primary_10_1021_acsami_6b16470 crossref_primary_10_1016_j_materresbull_2009_07_006 crossref_primary_10_1016_j_sna_2004_05_024 crossref_primary_10_1016_j_tsf_2014_01_007 crossref_primary_10_1149_2162_8777_ad3e2f |
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Snippet | Ferroelectric PZT thin films were deposited on Pt and SrRuO3 substrates in a cold-wall reactor, using the Pb(C2H5)4/Zr(OBu)4/Ti(OPri)4/O2 reaction system. In... Ferroelectric PZT thin films were deposited on Pt and SrRuO3 substrates in a cold-wall reactor, using the Pb(C 2 H 5 ) 4 /Zr(OBu) 4 /Ti(OPr i ) 4 /O 2 reaction... |
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Title | Synthesis and Properties of Lead Zirconate Titanate Thin Films Via Metalorganic Chemical Vapor Deposition |
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