A review of InP/InAlAs/InGaAs based transistors for high frequency applications

Saved in:
Bibliographic Details
Published inSuperlattices and microstructures Vol. 86; pp. 1 - 19
Main Authors Ajayan, J., Nirmal, D.
Format Journal Article
LanguageEnglish
Published 01.10.2015
Online AccessGet full text

Cover

Author Nirmal, D.
Ajayan, J.
Author_xml – sequence: 1
  givenname: J.
  surname: Ajayan
  fullname: Ajayan, J.
– sequence: 2
  givenname: D.
  surname: Nirmal
  fullname: Nirmal, D.
BookMark eNp9kLFOwzAURT0UibbwA0z-gaTPses4Y1RBqVSpDDBbjvtMXaVOsAOof08KTAxMdzpX954ZmYQuICF3DHIGTC6OeepPPi-ALXOQOQg1IVMoRZVJ4PKazFI6AkAlWDklu5pG_PD4STtHN-FpsQl1W6cx1qZOtDEJ93SIJiSfhi4m6rpID_71QF3Et3cM9kxN37femsF3Id2QK2fahLe_OScvD_fPq8dsu1tvVvU2s5zxISu4aPaussJaYZZc7VEBw5KBdI0qnEMlQDRYoLG8MUuhpAREWZlSYVUp5HNS_PTa2KUU0ek--pOJZ81AXzToo75o0BcNGqQeNYyQ-gNZP3zvHh_69j_0C0ilaaw
CitedBy_id crossref_primary_10_1016_j_aeue_2017_05_004
crossref_primary_10_1109_ACCESS_2021_3131094
crossref_primary_10_3390_ma11060975
crossref_primary_10_1016_j_spmi_2017_03_012
crossref_primary_10_1109_TIE_2020_3040684
crossref_primary_10_15251_JOR_2023_195_483
crossref_primary_10_3390_s23031441
crossref_primary_10_1016_j_mejo_2024_106168
crossref_primary_10_1116_1_5116199
crossref_primary_10_1016_j_aeue_2019_153040
crossref_primary_10_1007_s12633_022_01719_2
crossref_primary_10_1016_j_rinp_2024_107775
crossref_primary_10_1002_mmce_22218
crossref_primary_10_3390_nano14070592
crossref_primary_10_1016_j_jpcs_2021_110487
crossref_primary_10_1016_j_spmi_2018_05_039
crossref_primary_10_1016_j_aeue_2018_07_015
crossref_primary_10_3390_cryst7060155
crossref_primary_10_1134_S1063782623050032
crossref_primary_10_1063_1_4985133
crossref_primary_10_1007_s11664_018_6535_8
crossref_primary_10_1039_D4TA06357K
crossref_primary_10_1007_s10825_016_0884_4
crossref_primary_10_1016_j_jcrysgro_2022_126902
crossref_primary_10_1016_j_spmi_2017_04_045
crossref_primary_10_1007_s12633_021_01320_z
crossref_primary_10_1016_j_pcrysgrow_2016_04_019
crossref_primary_10_1038_s41598_018_32005_0
crossref_primary_10_3390_nano11030585
crossref_primary_10_1063_5_0141252
crossref_primary_10_1007_s12633_019_00226_1
crossref_primary_10_1007_s12633_020_00647_3
crossref_primary_10_1021_acs_jpcc_7b11133
crossref_primary_10_1088_1674_4926_38_4_044001
crossref_primary_10_3390_electronics12020259
crossref_primary_10_1016_j_jallcom_2022_163900
crossref_primary_10_1016_j_micrna_2022_207426
crossref_primary_10_1007_s11801_016_5228_x
crossref_primary_10_1049_tje2_70014
crossref_primary_10_1364_OL_44_006037
crossref_primary_10_1016_j_aeue_2019_06_015
crossref_primary_10_1088_1361_6463_aabf6b
crossref_primary_10_1007_s00723_024_01698_0
crossref_primary_10_1007_s10825_017_1086_4
crossref_primary_10_1063_5_0150647
crossref_primary_10_1016_j_spmi_2017_12_027
crossref_primary_10_1080_03772063_2018_1553641
crossref_primary_10_1016_j_aeue_2018_09_024
crossref_primary_10_1063_5_0051885
crossref_primary_10_1016_j_mssp_2020_105084
crossref_primary_10_1016_j_physe_2016_04_017
crossref_primary_10_1039_D4NR00857J
crossref_primary_10_1002_adsr_202200101
crossref_primary_10_1016_j_optmat_2023_114388
crossref_primary_10_1016_j_aeue_2017_06_004
crossref_primary_10_3389_fmats_2022_980077
crossref_primary_10_1016_j_mejo_2019_104604
crossref_primary_10_1002_aelm_202300624
crossref_primary_10_1149_2162_8777_aca04d
crossref_primary_10_1002_aenm_201600087
crossref_primary_10_1002_pssr_201800027
crossref_primary_10_1039_C8NR02440E
crossref_primary_10_1116_1_5140364
crossref_primary_10_1142_S0217979225400491
crossref_primary_10_1088_1361_6528_acd1f7
crossref_primary_10_1016_j_sse_2018_02_001
crossref_primary_10_1016_j_rinp_2019_02_035
crossref_primary_10_1088_1742_6596_1907_1_012065
crossref_primary_10_1007_s12633_021_01199_w
crossref_primary_10_1016_j_nima_2018_12_039
crossref_primary_10_7567_JJAP_56_034001
crossref_primary_10_1002_mmce_23072
crossref_primary_10_1016_j_jcrysgro_2024_127702
crossref_primary_10_1016_j_jcrysgro_2024_127946
crossref_primary_10_1016_j_jallcom_2024_173910
crossref_primary_10_1016_j_mejo_2024_106414
crossref_primary_10_1007_s11664_021_08908_6
crossref_primary_10_1364_PRJ_489960
crossref_primary_10_1016_j_physe_2019_04_020
crossref_primary_10_1016_j_jcrysgro_2021_126156
crossref_primary_10_1016_j_aeue_2018_11_013
crossref_primary_10_3390_nano14221842
crossref_primary_10_1016_j_actamat_2024_119854
crossref_primary_10_1016_j_spmi_2017_05_042
crossref_primary_10_1016_j_mee_2019_03_017
crossref_primary_10_1134_S1063782618160029
crossref_primary_10_1016_j_apsusc_2022_152802
crossref_primary_10_1007_s11664_018_6075_2
crossref_primary_10_3389_felec_2025_1497940
crossref_primary_10_1088_1742_6596_2331_1_012007
crossref_primary_10_1016_j_mattod_2024_07_008
crossref_primary_10_1088_1674_1056_27_2_028502
crossref_primary_10_1109_TED_2024_3406265
crossref_primary_10_1021_acs_cgd_1c00756
crossref_primary_10_1016_j_surfin_2023_102920
crossref_primary_10_1002_jnm_2579
crossref_primary_10_3390_nano10081555
crossref_primary_10_15541_jim20220645
crossref_primary_10_1080_00207217_2016_1218066
crossref_primary_10_3390_nano11113121
crossref_primary_10_1016_j_mssp_2020_105623
crossref_primary_10_3390_mi12121497
crossref_primary_10_1002_pssa_202100290
crossref_primary_10_2139_ssrn_4201165
crossref_primary_10_1016_j_nimb_2020_09_024
Cites_doi 10.1109/ICIPRM.1995.522078
10.1063/1.2149510
10.1109/LED.2007.899455
10.1063/1.2235862
10.1063/1.359406
10.1557/JMR.1996.0350
10.1038/nature10677
10.1109/TED.2009.2025908
10.1063/1.99114
10.1116/1.3360903
10.1109/ICIPRM.2000.850238
10.1016/S0040-6090(02)00117-7
10.1063/1.102608
10.1109/ICIPRM.2005.1517462
10.1109/IEDM.2008.4796700
10.5121/ijoe.2013.2102
10.1109/IEDM.2008.4796697
10.1063/1.3350893
10.1109/DRC.2009.5354938
10.1109/55.936343
10.1109/LED.2011.2118738
10.1109/TED.2014.2366205
10.1116/1.4905497
10.1109/55.334673
10.1109/LED.2012.2187422
10.1109/LED.2008.922031
10.1016/S0921-5107(99)00118-X
10.1143/JJAP.37.1365
10.1109/IEDM.2009.5424361
10.1109/IEDM.2011.6131544
10.1109/ICIPRM.2001.929010
10.1109/LED.2013.2269711
10.1109/LED.2009.2022346
10.1063/1.88469
10.1109/TED.2008.923522
10.1063/1.3599582
10.1116/1.1943448
10.1109/LED.2002.802667
10.1109/LED.2008.922728
10.1016/0168-583X(86)90408-8
10.1109/DRC.2011.5994532
10.1016/S0026-2714(00)00076-7
10.1109/16.772508
10.1109/IEDM.2008.4796798
10.1016/j.mejo.2004.07.003
10.1109/LED.2005.857723
10.1016/j.ccr.2013.03.019
10.1063/1.2764204
10.1143/JJAP.38.L154
10.1063/1.2960574
10.1109/IEDM.2007.4419018
10.1063/1.4757907
10.1021/cr900056b
10.1016/0022-0248(79)90002-2
10.1109/LED.2007.915374
10.1143/JJAP.39.1683
10.1109/TED.2006.882393
10.1109/IEDM.2010.5703307
10.1109/MWSYM.1993.276769
10.1063/1.4769230
10.1063/1.101173
10.1109/TED.2005.863545
10.1109/LED.2014.2301843
10.1016/0022-0248(89)90272-8
10.1063/1.109775
10.1109/55.962645
10.1063/1.2931031
10.1109/TED.2012.2227485
10.1109/IEDM.2008.4796796
10.1063/1.2912027
10.1016/S0022-0248(99)00601-6
10.1109/ICIPRM.2010.5516257
10.1063/1.4871504
10.1063/1.4838660
10.1109/ICIPRM.2010.5515954
10.1109/ICIPRM.2004.1442827
10.1063/1.3638474
10.1063/1.345576
10.1109/LED.2008.2000794
10.1109/T-ED.1980.19998
10.1109/ESSDERC.2007.4430979
10.1063/1.98722
10.1016/S0038-1101(01)00341-0
10.1016/j.mattod.2014.04.026
10.1109/IEDM.2014.7047106
10.1002/ppap.200400035
10.1063/1.93018
10.1109/IEDM.2007.4419020
10.1088/1674-1056/20/6/068502
10.1109/DRC.2006.305114
10.1109/IEDM.2002.1175829
10.1063/1.362746
10.1109/ICIPRM.1997.600214
10.1063/1.110877
10.1109/55.936345
10.1063/1.2164327
10.1143/APEX.4.054201
10.1016/j.sse.2006.04.047
10.1063/1.2814052
10.1109/LED.2009.2031304
10.1143/JJAP.33.798
10.1063/1.100225
10.1063/1.4721328
10.1143/JJAP.46.3167
10.1002/adma.200700079
10.1109/IEDM.2008.4796695
10.1109/TNANO.2004.842073
10.1109/ICIPRM.2010.5516002
10.1149/1.2407802
10.1109/IEDM.2008.4796696
10.1063/1.3133360
10.1109/IEDM.2009.5424358
10.1049/el:19960645
10.1109/LED.2007.910009
10.1143/APEX.5.064002
10.1109/16.853042
10.1063/1.101059
10.1063/1.113441
10.1109/IEDM.2007.4419013
10.1109/LED.2015.2393554
10.1049/el:19931404
10.1143/JJAP.19.L225
10.1109/T-ED.1979.19541
10.1109/TED.2014.2349872
10.1116/1.3125284
10.1038/nature09541
10.1109/55.753759
10.1116/1.1622676
10.1109/IEDM.2005.1609466
10.1016/j.microrel.2012.09.008
10.1109/LED.2005.852519
10.1109/TED.2002.803646
10.1109/ICIPRM.2008.4702964
10.1063/1.90457
10.1016/S0026-2714(01)00215-3
10.1109/16.481725
10.1063/1.2032591
10.1109/CSICS.2012.6340113
10.1063/1.327383
10.1109/LED.2011.2157451
10.1016/j.jcrysgro.2011.04.032
10.1063/1.1940727
10.1063/1.106798
10.1109/LED.2007.912017
10.1109/IEDM.2007.4419014
10.1109/LED.2007.901579
10.1109/LED.2012.2210187
10.1109/TED.2012.2200254
10.1063/1.3357434
10.1143/JJAP.24.L608
10.1002/cta.1800
10.1109/LED.2008.2001766
10.1109/55.704409
10.1109/55.709638
10.1109/TTHZ.2011.2159539
10.1063/1.2764438
10.1063/1.111164
10.1063/1.2956393
10.1017/S1759078714000579
10.1016/0038-1101(76)90043-5
10.1109/LED.2008.921393
10.1149/1.3119558
10.1109/55.585360
10.1109/TED.2013.2264141
10.1149/1.3569931
10.1109/LED.2006.889502
10.1116/1.2197517
10.1109/LMWC.2014.2316220
10.1063/1.4896494
10.1109/IEDM.2009.5424354
10.1063/1.3315870
10.1109/ICIPRM.2007.381209
10.1109/LED.2012.2224090
10.1063/1.119179
10.1007/BF02666524
10.1109/ICIPRM.2005.1517436
10.1063/1.2920438
10.1109/LED.2008.917817
10.1109/LED.2004.827288
10.1109/22.780393
10.1063/1.3457388
10.1063/1.355858
10.1103/PhysRevB.63.155202
10.1109/LED.2014.2308925
10.1016/0168-583X(93)90707-D
10.1063/1.96093
10.1016/0022-0248(91)90982-B
10.1109/IEDM.2007.4419032
10.1109/IEDM.2007.4419016
10.1109/CSICS.2011.6062494
10.1063/1.2213170
10.1016/j.jcrysgro.2004.12.070
10.1109/TMTT.2009.2027070
10.1109/LED.2011.2181323
10.1116/1.2905246
10.1063/1.2218826
10.1063/1.2776846
10.1063/1.2795802
10.1109/ICIPRM.1991.147394
10.1109/IEDM.2006.346742
10.1063/1.2741609
10.1109/MWSYM.2010.5518124
10.1109/16.155871
10.1109/LED.2007.896813
10.1088/1674-4926/30/4/044003
10.1063/1.113412
10.1109/LED.2004.832528
10.1063/1.4831683
10.1109/TED.2007.904986
10.1016/0038-1101(92)90051-D
10.1109/IEDM.2012.6479149
10.1109/EDL.1982.25519
10.1109/IEDM.1998.746339
10.1063/1.1361065
10.1109/LED.2004.836502
10.1109/IEDM.2008.4796705
10.1109/IEDM.2010.5703454
10.1116/1.576617
10.1109/TDMR.2005.857874
10.1109/IEDM.2009.5424207
10.1109/ICIPRM.2001.929171
10.1088/0268-1242/27/7/074002
10.1063/1.100187
10.1109/ICIPRM.2009.5012408
10.1109/16.766866
10.1002/anie.200301652
ContentType Journal Article
DBID AAYXX
CITATION
DOI 10.1016/j.spmi.2015.06.048
DatabaseName CrossRef
DatabaseTitle CrossRef
DeliveryMethod fulltext_linktorsrc
Discipline Chemistry
Physics
EndPage 19
ExternalDocumentID 10_1016_j_spmi_2015_06_048
GroupedDBID --K
--M
-~X
.~1
0R~
123
1B1
1RT
1~.
1~5
29Q
4.4
457
4G.
5VS
7-5
71M
8P~
9JN
AABXZ
AAEDT
AAEDW
AAEPC
AAIKJ
AAKOC
AALRI
AAOAW
AAQFI
AAQXK
AATTM
AAXKI
AAXUO
AAYWO
AAYXX
ABFNM
ABJNI
ABMAC
ABNEU
ABWVN
ABXDB
ABXRA
ACDAQ
ACFVG
ACGFS
ACNNM
ACRLP
ACRPL
ACVFH
ADBBV
ADCNI
ADEZE
ADFGL
ADMUD
ADNMO
AEBSH
AEIPS
AEKER
AENEX
AEUPX
AEZYN
AFPUW
AFRZQ
AFTJW
AFXIZ
AGHFR
AGQPQ
AGRNS
AGUBO
AGYEJ
AHHHB
AIEXJ
AIGII
AIIUN
AIKHN
AITUG
AIVDX
AKBMS
AKRWK
AKYEP
ALMA_UNASSIGNED_HOLDINGS
AMRAJ
ANKPU
ASPBG
AVWKF
AXJTR
AZFZN
BBWZM
BKOJK
BLXMC
BNPGV
CAG
CITATION
COF
CS3
DM4
DU5
EBS
EFBJH
EJD
EO8
EO9
EP2
EP3
FDB
FEDTE
FGOYB
FIRID
FNPLU
FYGXN
G-2
G-Q
GBLVA
HMV
HVGLF
HZ~
IHE
J1W
KOM
LG5
M24
M37
MAGPM
MO0
N9A
NDZJH
O-L
O9-
OAUVE
OGIMB
OZT
P-8
P-9
P2P
PC.
Q38
R2-
RIG
RNS
ROL
RPZ
SDF
SDG
SDP
SES
SEW
SMS
SPC
SPCBC
SPD
SPG
SSH
SSM
SSQ
SSZ
T5K
UHS
WUQ
XPP
ZMT
ZU3
~G-
ID FETCH-LOGICAL-c313t-234bdf9c4cc4a538de801e7106fb82ffe8404be2eac3ba548660ee69a78e998e3
ISSN 0749-6036
IngestDate Thu Jul 03 08:40:44 EDT 2025
Thu Apr 24 23:01:58 EDT 2025
IsPeerReviewed false
IsScholarly false
Language English
LinkModel OpenURL
MergedId FETCHMERGED-LOGICAL-c313t-234bdf9c4cc4a538de801e7106fb82ffe8404be2eac3ba548660ee69a78e998e3
PageCount 19
ParticipantIDs crossref_primary_10_1016_j_spmi_2015_06_048
crossref_citationtrail_10_1016_j_spmi_2015_06_048
PublicationCentury 2000
PublicationDate 2015-10-01
PublicationDateYYYYMMDD 2015-10-01
PublicationDate_xml – month: 10
  year: 2015
  text: 2015-10-01
  day: 01
PublicationDecade 2010
PublicationTitle Superlattices and microstructures
PublicationYear 2015
References 10.1016/j.spmi.2015.06.048_b0800
Chau (10.1016/j.spmi.2015.06.048_b0695) 2005; 4
10.1016/j.spmi.2015.06.048_b0920
Micovic (10.1016/j.spmi.2015.06.048_b0515) 1994; 64
Dilorenzo (10.1016/j.spmi.2015.06.048_b0535) 1971; 118
10.1016/j.spmi.2015.06.048_b1215
10.1016/j.spmi.2015.06.048_b0005
Lin (10.1016/j.spmi.2015.06.048_b0820) 2012; 5
Kim (10.1016/j.spmi.2015.06.048_b1260) 2004; 25
Puurunen (10.1016/j.spmi.2015.06.048_b0150) 2005; 97
Fluckiger (10.1016/j.spmi.2015.06.048_b0940) 2014; 7
Knez (10.1016/j.spmi.2015.06.048_b0140) 2007; 19
Uchiyama (10.1016/j.spmi.2015.06.048_b0790) 2005; 5
Hyeon (10.1016/j.spmi.2015.06.048_b0415) 2011; 4
Huang (10.1016/j.spmi.2015.06.048_b0425) 2006; 89
Nirmal (10.1016/j.spmi.2015.06.048_b0115) 2013; 41
Harada (10.1016/j.spmi.2015.06.048_b1200) 1993; 29
Fujihara (10.1016/j.spmi.2015.06.048_b0805) 1996; 32
Kim (10.1016/j.spmi.2015.06.048_b1285) 2005; 26
10.1016/j.spmi.2015.06.048_b0925
Mohammad (10.1016/j.spmi.2015.06.048_b0685) 2002; 46
10.1016/j.spmi.2015.06.048_b1205
Nirmal (10.1016/j.spmi.2015.06.048_b0075) 2013; 53
10.1016/j.spmi.2015.06.048_b1325
Schubert (10.1016/j.spmi.2015.06.048_b0555) 1989; 54
10.1016/j.spmi.2015.06.048_b0355
10.1016/j.spmi.2015.06.048_b0110
Wood (10.1016/j.spmi.2015.06.048_b0540) 1980; 51
Dong (10.1016/j.spmi.2015.06.048_b1195) 2011; 59
10.1016/j.spmi.2015.06.048_b0350
Dimgle (10.1016/j.spmi.2015.06.048_b1010) 1978; 33
Wilk (10.1016/j.spmi.2015.06.048_b0025) 2001; 89
Ok (10.1016/j.spmi.2015.06.048_b0230) 2008; 92
Chobpattana (10.1016/j.spmi.2015.06.048_b1045) 2014; 116
Bhattacharya (10.1016/j.spmi.2015.06.048_b1000) 1995; 16
Shouli (10.1016/j.spmi.2015.06.048_b0620) 2009; 30
Kashio (10.1016/j.spmi.2015.06.048_b0880) 2014; 61
Koh (10.1016/j.spmi.2015.06.048_b0825) 2014; 104
10.1016/j.spmi.2015.06.048_b0915
Chin (10.1016/j.spmi.2015.06.048_b0235) 2008; 29
10.1016/j.spmi.2015.06.048_b0900
Lee (10.1016/j.spmi.2015.06.048_b0520) 1989; 96
10.1016/j.spmi.2015.06.048_b1315
Kim (10.1016/j.spmi.2015.06.048_b0295) 2007; 90
Li (10.1016/j.spmi.2015.06.048_b0690) 2006; 50
10.1016/j.spmi.2015.06.048_b0220
10.1016/j.spmi.2015.06.048_b1310
Yamamoto (10.1016/j.spmi.2015.06.048_b0650) 1996; 25
Ye (10.1016/j.spmi.2015.06.048_b0060) 2008; 26
Zhao (10.1016/j.spmi.2015.06.048_b0365) 2010; 96
Hong (10.1016/j.spmi.2015.06.048_b0270) 2007; 46
Sieg (10.1016/j.spmi.2015.06.048_b0600) 1996; 80
Lee (10.1016/j.spmi.2015.06.048_b1295) 2007; 28
Zhou (10.1016/j.spmi.2015.06.048_b1270) 2007; 28
10.1016/j.spmi.2015.06.048_b1305
10.1016/j.spmi.2015.06.048_b0335
Hossain (10.1016/j.spmi.2015.06.048_b0875) 2014; 24
Ren (10.1016/j.spmi.2015.06.048_b0280) 1998; 19
Egard (10.1016/j.spmi.2015.06.048_b0780) 2012; 33
Van Delft (10.1016/j.spmi.2015.06.048_b0170) 2012; 27
Robertson (10.1016/j.spmi.2015.06.048_b0410) 2006; 100
Lee (10.1016/j.spmi.2015.06.048_b0435) 2013; 103
Schubert (10.1016/j.spmi.2015.06.048_b0525) 1990; 8
Xu (10.1016/j.spmi.2015.06.048_b0945) 2013; 34
Blumina (10.1016/j.spmi.2015.06.048_b0640) 1994; 75
Suemitsu (10.1016/j.spmi.2015.06.048_b1105) 1998; 37
Kraemer (10.1016/j.spmi.2015.06.048_b0015) 2013; 90
Desouza (10.1016/j.spmi.2015.06.048_b0215) 2008; 92
Moore (10.1016/j.spmi.2015.06.048_b0065) 1965; 38
Hill (10.1016/j.spmi.2015.06.048_b0265) 2007; 28
10.1016/j.spmi.2015.06.048_b0845
Brian (10.1016/j.spmi.2015.06.048_b0625) 2005; 278
Koveshnikov (10.1016/j.spmi.2015.06.048_b0285) 2006; 88
He (10.1016/j.spmi.2015.06.048_b0870) 2004; 25
10.1016/j.spmi.2015.06.048_b1135
10.1016/j.spmi.2015.06.048_b0045
Kraemer (10.1016/j.spmi.2015.06.048_b0935) 2009; 56
De Lyon (10.1016/j.spmi.2015.06.048_b0505) 1990; 56
Cheng (10.1016/j.spmi.2015.06.048_b0985) 2011; 98
10.1016/j.spmi.2015.06.048_b0290
Leskela (10.1016/j.spmi.2015.06.048_b0145) 2003; 42
Kim (10.1016/j.spmi.2015.06.048_b1140) 2008; 29
Kim (10.1016/j.spmi.2015.06.048_b1250) 2010; 31
Latham (10.1016/j.spmi.2015.06.048_b0670) 2001; 63
Griffith (10.1016/j.spmi.2015.06.048_b0885) 2004; 25
10.1016/j.spmi.2015.06.048_b0725
10.1016/j.spmi.2015.06.048_b0605
Palankovski (10.1016/j.spmi.2015.06.048_b0585) 1999; 66
10.1016/j.spmi.2015.06.048_b0710
Kabayashi (10.1016/j.spmi.2015.06.048_b0855) 1998
Kim (10.1016/j.spmi.2015.06.048_b1245) 2007; 54
Benchimol (10.1016/j.spmi.2015.06.048_b0675) 2000; 209
Hafez (10.1016/j.spmi.2015.06.048_b0905) 2005; 87
Xuan (10.1016/j.spmi.2015.06.048_b0195) 2008; 29
Enoki (10.1016/j.spmi.2015.06.048_b1080) 1994; 33
Johnson (10.1016/j.spmi.2015.06.048_b0130) 2014; 17
Esame (10.1016/j.spmi.2015.06.048_b0850) 2004; 35
10.1016/j.spmi.2015.06.048_b0395
10.1016/j.spmi.2015.06.048_b1120
Terao (10.1016/j.spmi.2015.06.048_b0400) 2011; 4
10.1016/j.spmi.2015.06.048_b0390
Liu (10.1016/j.spmi.2015.06.048_b0455) 2010
Oktyabrsky (10.1016/j.spmi.2015.06.048_b0750) 2011; 35
Gu (10.1016/j.spmi.2015.06.048_b0765) 2011; 99
Asifkhan (10.1016/j.spmi.2015.06.048_b1020) 1993; 63
Lovblom (10.1016/j.spmi.2015.06.048_b0950) 2013; 34
Henson (10.1016/j.spmi.2015.06.048_b0030) 1999; 20
Prasher (10.1016/j.spmi.2015.06.048_b0460) 2013; 2
Yamada (10.1016/j.spmi.2015.06.048_b0470) 1993; 80–81
Rajagopalan (10.1016/j.spmi.2015.06.048_b0125) 2007; 28
10.1016/j.spmi.2015.06.048_b0835
10.1016/j.spmi.2015.06.048_b0715
Griffith (10.1016/j.spmi.2015.06.048_b0890) 2005; 26
Kraemer (10.1016/j.spmi.2015.06.048_b0930) 2009; 57
Nguyen (10.1016/j.spmi.2015.06.048_b1075) 1992; 39
Shahrjerdi (10.1016/j.spmi.2015.06.048_b0310) 2007; 91
10.1016/j.spmi.2015.06.048_b0385
10.1016/j.spmi.2015.06.048_b1230
Mimura (10.1016/j.spmi.2015.06.048_b0080) 1980; 27
10.1016/j.spmi.2015.06.048_b0260
Miikkulainen (10.1016/j.spmi.2015.06.048_b0155) 2013; 113
10.1016/j.spmi.2015.06.048_b0380
Yang (10.1016/j.spmi.2015.06.048_b0420) 2012; 111
Malik (10.1016/j.spmi.2015.06.048_b0495) 1988; 53
10.1016/j.spmi.2015.06.048_b0705
Wojtowicz (10.1016/j.spmi.2015.06.048_b1170) 1994; 15
Yamashita (10.1016/j.spmi.2015.06.048_b1210) 2002; 23
10.1016/j.spmi.2015.06.048_b1225
Zaknoune (10.1016/j.spmi.2015.06.048_b0895) 2012; 33
Bass (10.1016/j.spmi.2015.06.048_b0530) 1979; 47
Chen (10.1016/j.spmi.2015.06.048_b0325) 2010; 96
10.1016/j.spmi.2015.06.048_b0010
10.1016/j.spmi.2015.06.048_b0250
Hsu (10.1016/j.spmi.2015.06.048_b1300) 2006; 53
Ritala (10.1016/j.spmi.2015.06.048_b0190) 2009
Makita (10.1016/j.spmi.2015.06.048_b0480) 1985; 47
Ishibashi (10.1016/j.spmi.2015.06.048_b0465) 1994; vol. 41
Deal (10.1016/j.spmi.2015.06.048_b1240) 2011; 1
Kim (10.1016/j.spmi.2015.06.048_b1190) 2008; 55
10.1016/j.spmi.2015.06.048_b0405
Lu (10.1016/j.spmi.2015.06.048_b0610) 1994; 64
Jiang (10.1016/j.spmi.2015.06.048_b0630) 1995; 66
10.1016/j.spmi.2015.06.048_b1055
Lin (10.1016/j.spmi.2015.06.048_b0375) 2007; 91
10.1016/j.spmi.2015.06.048_b1175
10.1016/j.spmi.2015.06.048_b0085
10.1016/j.spmi.2015.06.048_b1050
Schwierz (10.1016/j.spmi.2015.06.048_b0830) 2001; 41
10.1016/j.spmi.2015.06.048_b1060
Schubert (10.1016/j.spmi.2015.06.048_b0580) 1987; 51
10.1016/j.spmi.2015.06.048_b1180
Pfeiffer (10.1016/j.spmi.2015.06.048_b0020) 2003; 57
Huang (10.1016/j.spmi.2015.06.048_b0840) 2013; 103
Takahashi (10.1016/j.spmi.2015.06.048_b1145) 2012; 59
Suemitsu (10.1016/j.spmi.2015.06.048_b0665) 2002; 42
Lovblom (10.1016/j.spmi.2015.06.048_b0960) 2011; 32
10.1016/j.spmi.2015.06.048_b0755
Hartley (10.1016/j.spmi.2015.06.048_b0475) 1982
10.1016/j.spmi.2015.06.048_b0990
Suemitsu (10.1016/j.spmi.2015.06.048_b1115) 1999; 46
Yamashita (10.1016/j.spmi.2015.06.048_b1095) 2001; 22
10.1016/j.spmi.2015.06.048_b1040
10.1016/j.spmi.2015.06.048_b1160
Hayafuji (10.1016/j.spmi.2015.06.048_b0645) 1995; 66
Kohara (10.1016/j.spmi.2015.06.048_b0660) 2000; 39
Passlack (10.1016/j.spmi.2015.06.048_b0370) 2006; 53
Mahajan (10.1016/j.spmi.2015.06.048_b1130) 1997; 18
Yang (10.1016/j.spmi.2015.06.048_b1280) 2011; 324
Santos (10.1016/j.spmi.2015.06.048_b0565) 1988; 53
Chen (10.1016/j.spmi.2015.06.048_b1125) 1996; 43
Chuang (10.1016/j.spmi.2015.06.048_b0955) 2008; 29
10.1016/j.spmi.2015.06.048_b0980
10.1016/j.spmi.2015.06.048_b1155
10.1016/j.spmi.2015.06.048_b0185
10.1016/j.spmi.2015.06.048_b1150
10.1016/j.spmi.2015.06.048_b0070
Zhao (10.1016/j.spmi.2015.06.048_b0210) 2009; 27
Sun (10.1016/j.spmi.2015.06.048_b0340) 2007; 28
Nakasha (10.1016/j.spmi.2015.06.048_b1165) 2007; 43
Cheng (10.1016/j.spmi.2015.06.048_b1025) 1982; 40
Droopad (10.1016/j.spmi.2015.06.048_b0095) 2006; 24
Nathaniel (10.1016/j.spmi.2015.06.048_b1265) 2007; 102
10.1016/j.spmi.2015.06.048_b0735
Asifkhan (10.1016/j.spmi.2015.06.048_b1015) 1992; 60
10.1016/j.spmi.2015.06.048_b0975
Fukui (10.1016/j.spmi.2015.06.048_b1255) 1979; 26
10.1016/j.spmi.2015.06.048_b0970
Schubert (10.1016/j.spmi.2015.06.048_b0550) 1988; 52
10.1016/j.spmi.2015.06.048_b0055
Singisetti (10.1016/j.spmi.2015.06.048_b0740) 2009; 30
10.1016/j.spmi.2015.06.048_b0050
Wu (10.1016/j.spmi.2015.06.048_b0255) 2009; 30
Nirmal (10.1016/j.spmi.2015.06.048_b0100) 2013; 100
Jain (10.1016/j.spmi.2015.06.048_b0910) 2011; 32
Tanabe (10.1016/j.spmi.2015.06.048_b0655) 1997; 70
Suemitsu (10.1016/j.spmi.2015.06.048_b1085) 1999; 38
Makita (10.1016/j.spmi.2015.06.048_b0485) 1986; 15
Zhao (10.1016/j.spmi.2015.06.048_b0305) 2007; 91
Nagle (10.1016/j.spmi.2015.06.048_b0510) 1991; 111
Suemitsu (10.1016/j.spmi.2015.06.048_b1110) 2002; 49
Naganuma (10.1016/j.spmi.2015.06.048_b0500) 1975; 27
Shinohara (10.1016/j.spmi.2015.06.048_b1100) 2001; 22
10.1016/j.spmi.2015.06.048_b0205
Wistey (10.1016/j.spmi.2015.06.048_b1035) 2015; 33
Passlack (10.1016/j.spmi.2015.06.048_b0090) 2005; 23
10.1016/j.spmi.2015.06.048_b0445
10.1016/j.spmi.2015.06.048_b0200
Lin (10.1016/j.spmi.2015.06.048_b0275) 2008; 93
Zhao (10.1016/j.spmi.2015.06.048_b0360) 2009; 94
Schubert (10.1016/j.spmi.2015.06.048_b0560) 1990; 67
10.1016/j.spmi.2015.06.048_b0440
10.1016/j.spmi.2015.06.048_b0320
Zota (10.1016/j.spmi.2015.06.048_b0700) 2014; 35
Goel (10.1016/j.spmi.2015.06.048_b0430) 2007; 91
10.1016/j.spmi.2015.06.048_b0680
Dvorak (10.1016/j.spmi.2015.06.048_b0965) 2001; 22
Pearton (10.1016/j.spmi.2015.06.048_b0815) 2005; 2
Schleeh (10.1016/j.spmi.2015.06.048_b1220) 2012; 33
Sawdai (10.1016/j.spmi.2015.06.048_b0860) 1999; 47
Nagaiah (10.1016/j.spmi.2015.06.048_b0745) 2010; 28
Li (10.1016/j.spmi.2015.06.048_b1275) 2008; 29
Del Alamo (10.1016/j.spmi.2015.06.048_b0450) 2011; 479
Slotboom (10.1016/j.spmi.2015.06.048_b0590) 1976; 1
References_xml – ident: 10.1016/j.spmi.2015.06.048_b1050
  doi: 10.1109/ICIPRM.1995.522078
– volume: 87
  start-page: 252109
  issue: December
  year: 2005
  ident: 10.1016/j.spmi.2015.06.048_b0905
  article-title: 12.5nm base pseudomorphic HBTs achieving fT=710GHz and fmax=340GHz
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.2149510
– ident: 10.1016/j.spmi.2015.06.048_b1065
– volume: 43
  start-page: 486
  issue: 4
  year: 2007
  ident: 10.1016/j.spmi.2015.06.048_b1165
  article-title: Ultra high speed and ultra low noise InP HEMTs
  publication-title: FUJITSU Sci. Tech. J.
– volume: 28
  start-page: 539
  issue: 7
  year: 2007
  ident: 10.1016/j.spmi.2015.06.048_b1270
  article-title: Metamorphic hetero structure InP/GaAsSb/InP HBTs on GaAs substrate by MOCVD
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/LED.2007.899455
– volume: 89
  start-page: 042104
  issue: 4
  year: 2006
  ident: 10.1016/j.spmi.2015.06.048_b0345
  article-title: Evidence of electron and hole inversion in GaAs MOS capacitors with HfO2 gate dielectrics and α-Si/SiO2 inter layers
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.2235862
– volume: 77
  start-page: 4822
  issue: 9
  year: 1995
  ident: 10.1016/j.spmi.2015.06.048_b0615
  article-title: Study of band gap narrowing effect and nonradiative recombination centres for heavily doped GaAs by photoluminescence spectroscopy
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.359406
– year: 2003
  ident: 10.1016/j.spmi.2015.06.048_b0035
– volume: 11
  start-page: 2757
  issue: 11
  year: 1996
  ident: 10.1016/j.spmi.2015.06.048_b0120
  article-title: Thermodynamic stabilities of binary oxides in contact with silicon
  publication-title: J. Mater. Res.
  doi: 10.1557/JMR.1996.0350
– start-page: 158
  year: 2009
  ident: 10.1016/j.spmi.2015.06.048_b0190
  article-title: Chemical vapour deposition: precursors processes and applications
  publication-title: Royal Soc. Chem.
– volume: 479
  start-page: 317
  issue: 7373
  year: 2011
  ident: 10.1016/j.spmi.2015.06.048_b0450
  article-title: Nanometre electronics with III–V compound semiconductors
  publication-title: Nature
  doi: 10.1038/nature10677
– volume: 56
  start-page: 1897
  issue: 9
  year: 2009
  ident: 10.1016/j.spmi.2015.06.048_b0935
  article-title: InP DHBT process in transferred substrate technology with fT and fmax over 400GHz
  publication-title: IEEE Trans. Elect. Dev.
  doi: 10.1109/TED.2009.2025908
– volume: 52
  start-page: 1508
  issue: 18
  year: 1988
  ident: 10.1016/j.spmi.2015.06.048_b0550
  article-title: Spatial localization of impurities in δ-doped GaAs
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.99114
– volume: 28
  start-page: C3H5
  issue: 3
  year: 2010
  ident: 10.1016/j.spmi.2015.06.048_b0745
  article-title: Mobility and remote scattering in buried InGaAs quantum well channel with high-κ gate oxide
  publication-title: J. Vac. Sci. Technol. B
  doi: 10.1116/1.3360903
– ident: 10.1016/j.spmi.2015.06.048_b1180
  doi: 10.1109/ICIPRM.2000.850238
– volume: 409
  start-page: 138
  year: 2002
  ident: 10.1016/j.spmi.2015.06.048_b0165
  article-title: Atomic layer deposition (ALD): from precursors to thin film structures
  publication-title: Thin Solid Films
  doi: 10.1016/S0040-6090(02)00117-7
– volume: 56
  start-page: 1040
  issue: 1
  year: 1990
  ident: 10.1016/j.spmi.2015.06.048_b0505
  article-title: Lattice-contraction due to carbon doping of GaAs grown by metal organic MBE
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.102608
– ident: 10.1016/j.spmi.2015.06.048_b1225
  doi: 10.1109/ICIPRM.2005.1517462
– ident: 10.1016/j.spmi.2015.06.048_b0300
  doi: 10.1109/IEDM.2008.4796700
– volume: 2
  start-page: 11
  issue: 1
  year: 2013
  ident: 10.1016/j.spmi.2015.06.048_b0460
  article-title: Study of novel channel materials using III–V compounds with various gate dielectrics
  publication-title: Int. J. Org. Electron. (IJOE)
  doi: 10.5121/ijoe.2013.2102
– ident: 10.1016/j.spmi.2015.06.048_b0755
  doi: 10.1109/IEDM.2008.4796697
– volume: 96
  start-page: 102101
  issue: 10
  year: 2010
  ident: 10.1016/j.spmi.2015.06.048_b0365
  article-title: Effects of barrier layers on device performance of high mobility In0.7Ga0.3As MOSFET
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.3350893
– ident: 10.1016/j.spmi.2015.06.048_b0200
  doi: 10.1109/DRC.2009.5354938
– volume: 22
  start-page: 361
  issue: 8
  year: 2001
  ident: 10.1016/j.spmi.2015.06.048_b0965
  article-title: 300GHz InP/GaAsSb/InP DHBT with high current capability and BV/Sub CEO/>6 V
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/55.936343
– volume: 32
  start-page: 629
  issue: 5
  year: 2011
  ident: 10.1016/j.spmi.2015.06.048_b0960
  article-title: InP/GaAsSb DHBTs with 500 GHz maximum oscillation frequency
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/LED.2011.2118738
– volume: 59
  start-page: 128
  issue: 1
  year: 2011
  ident: 10.1016/j.spmi.2015.06.048_b1195
  article-title: 50-nm asymmetrically recessed metamorphic high electron mobility transistors with reduced source–drain spacing: performance enhancements and tradeoffs
  publication-title: IEEE Trans. Elect. Dev.
  doi: 10.1109/TED.2014.2366205
– volume: 33
  issue: 1
  year: 2015
  ident: 10.1016/j.spmi.2015.06.048_b1035
  article-title: Control of InGaAs and InAs facets using metal modulation epitaxy
  publication-title: J. Vac. Sci. Technol. B
  doi: 10.1116/1.4905497
– volume: 15
  start-page: 477
  issue: 11
  year: 1994
  ident: 10.1016/j.spmi.2015.06.048_b1170
  article-title: 0.10μm graded InGaAs channel InP HEMT with 305GHz fT and 340GHz fmax
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/55.334673
– volume: 33
  start-page: 664
  issue: 5
  year: 2012
  ident: 10.1016/j.spmi.2015.06.048_b1220
  article-title: Ultra low power cryogenic InP HEMT with minimum noise temperature of 1 K at 6 GHz
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/LED.2012.2187422
– volume: 29
  start-page: 557
  issue: 6
  year: 2008
  ident: 10.1016/j.spmi.2015.06.048_b0225
  article-title: Fabrication of self aligned enhancement mode In0.53Ga0.47As MOSFETs with TaN/HfO2/AlN gate stack
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/LED.2008.922031
– volume: 66
  start-page: 46
  year: 1999
  ident: 10.1016/j.spmi.2015.06.048_b0585
  article-title: Study of dopant-dependent band gap narrowing in compound semiconductor devices
  publication-title: Mater. Sci. Eng. B
  doi: 10.1016/S0921-5107(99)00118-X
– volume: 37
  start-page: 1365
  issue: 38
  year: 1998
  ident: 10.1016/j.spmi.2015.06.048_b1105
  article-title: Improved recessed gate structure for sub 0.1μm – gate InP based high electron mobility transistors
  publication-title: Jap. J. Appl. Phys.
  doi: 10.1143/JJAP.37.1365
– ident: 10.1016/j.spmi.2015.06.048_b0715
  doi: 10.1109/IEDM.2009.5424361
– ident: 10.1016/j.spmi.2015.06.048_b0775
  doi: 10.1109/IEDM.2011.6131544
– ident: 10.1016/j.spmi.2015.06.048_b0970
  doi: 10.1109/ICIPRM.2001.929010
– ident: 10.1016/j.spmi.2015.06.048_b0405
  doi: 10.1109/IEDM.2009.5424361
– volume: 34
  start-page: 984
  issue: 8
  year: 2013
  ident: 10.1016/j.spmi.2015.06.048_b0950
  article-title: InP/GaAsSb DHBTs with simultaneous fT/fmax=428/621GHz
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/LED.2013.2269711
– volume: 30
  start-page: 700
  issue: 7
  year: 2009
  ident: 10.1016/j.spmi.2015.06.048_b0255
  article-title: 0.8-V Supply voltage deep sub micrometer inversion mode In0.75Ga0.25As MOSFET
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/LED.2009.2022346
– volume: 27
  start-page: 342
  year: 1975
  ident: 10.1016/j.spmi.2015.06.048_b0500
  article-title: Ionized Zn doping of GaAs molecular beam epitaxial films
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.88469
– volume: 55
  start-page: 1577
  issue: 7
  year: 2008
  ident: 10.1016/j.spmi.2015.06.048_b1190
  article-title: A two-step recess process based on atomic layer etching for high performance In0.52Al0.48As/In0.53Ga0.47As p-HEMTs
  publication-title: IEEE Trans. Elect. Dev.
  doi: 10.1109/TED.2008.923522
– volume: 98
  start-page: 242103
  issue: 24
  year: 2011
  ident: 10.1016/j.spmi.2015.06.048_b0985
  article-title: Hot electron injection effect on the microwave performance of type-I/II AlInP/GaAsSb/InP DHBTs
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.3599582
– ident: 10.1016/j.spmi.2015.06.048_b0055
– volume: 23
  start-page: 1773
  year: 2005
  ident: 10.1016/j.spmi.2015.06.048_b0090
  article-title: Development methodology for high-κ gate dielectrics on III–V semiconductor GdxGa0.4−xO0.6/Ga2O3 dielectric stack on GaAs
  publication-title: J. Vac. Sci. Technol. B
  doi: 10.1116/1.1943448
– volume: 23
  start-page: 573
  issue: 10
  year: 2002
  ident: 10.1016/j.spmi.2015.06.048_b1210
  article-title: Pseudomorphic In/Sub 0.52/Al/Sub 0.48/As/In/Sub 0.7/Ga/Sub 0.3/As HEMTs with an ultra high f/Sub T/ of 562GHz
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/LED.2002.802667
– volume: 29
  start-page: 561
  issue: 6
  year: 2008
  ident: 10.1016/j.spmi.2015.06.048_b1275
  article-title: Metamorphic AlInAs/GaInAs, HEMTs on GaAs substrates by MOCVD
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/LED.2008.922728
– volume: 15
  start-page: 765
  year: 1986
  ident: 10.1016/j.spmi.2015.06.048_b0485
  article-title: Formation of radiative complex-centres by dual implantation of C+ and O+ ions into GaAs
  publication-title: Nucl. Instr. Meth. B
  doi: 10.1016/0168-583X(86)90408-8
– ident: 10.1016/j.spmi.2015.06.048_b0900
  doi: 10.1109/DRC.2011.5994532
– volume: 41
  start-page: 145
  year: 2001
  ident: 10.1016/j.spmi.2015.06.048_b0830
  article-title: Semiconductor devices for RF applications: evolution and current status
  publication-title: Microelectron. Reliab.
  doi: 10.1016/S0026-2714(00)00076-7
– ident: 10.1016/j.spmi.2015.06.048_b0680
– volume: 46
  start-page: 1537
  issue: July
  year: 1999
  ident: 10.1016/j.spmi.2015.06.048_b0040
  article-title: The impact of high-κ gate dielectric and metal gate electrodes on sub-100nm MOSFETs
  publication-title: IEEE Trans. Elect. Dev.
  doi: 10.1109/16.772508
– ident: 10.1016/j.spmi.2015.06.048_b1310
  doi: 10.1109/IEDM.2008.4796798
– volume: 35
  start-page: 901
  issue: June
  year: 2004
  ident: 10.1016/j.spmi.2015.06.048_b0850
  article-title: Performance comparison of state of art HBT based on AlGaAs/GaAs, Si/SiGe and InGaAs/InP
  publication-title: Microelectron. J.
  doi: 10.1016/j.mejo.2004.07.003
– volume: 26
  start-page: 787
  issue: 11
  year: 2005
  ident: 10.1016/j.spmi.2015.06.048_b1285
  article-title: High performance 0.1-μm In/Sub 0.4/AlAs/In/Sub 0.35/GaAs MHEMTs with Ar plasma treatments
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/LED.2005.857723
– volume: 257
  start-page: 3222
  issue: 23–24
  year: 2013
  ident: 10.1016/j.spmi.2015.06.048_b0175
  article-title: Precursors and chemistry for the atomic layer deposition of metallic first row transition metal films
  publication-title: Coord. Chem. Rev.
  doi: 10.1016/j.ccr.2013.03.019
– volume: 102
  start-page: 033511
  year: 2007
  ident: 10.1016/j.spmi.2015.06.048_b1265
  article-title: Relaxed high quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.2764204
– volume: 38
  start-page: L154
  issue: 2B
  year: 1999
  ident: 10.1016/j.spmi.2015.06.048_b1085
  article-title: 30nm gate InP based lattice matched high electron mobility transistors with 350 GHz cut off frequency
  publication-title: Jap. J. Appl. Phys.
  doi: 10.1143/JJAP.38.L154
– volume: 93
  start-page: 031902
  year: 2008
  ident: 10.1016/j.spmi.2015.06.048_b0770
  article-title: In situ metal organic chemical vapour deposition, atomic layer deposition of Al2O3 on GaAs using trymethylaluminum and isopropanol precursors
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.2960574
– ident: 10.1016/j.spmi.2015.06.048_b0845
  doi: 10.1109/IEDM.2007.4419018
– volume: 113
  start-page: 101
  issue: 2
  year: 2013
  ident: 10.1016/j.spmi.2015.06.048_b0155
  article-title: Crystallinity of inorganic films grown by atomic layer deposition: overview and general trends
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.4757907
– volume: 110
  start-page: 111
  year: 2010
  ident: 10.1016/j.spmi.2015.06.048_b0135
  article-title: Atomic layer deposition: an overview
  publication-title: Chem. Rev.
  doi: 10.1021/cr900056b
– ident: 10.1016/j.spmi.2015.06.048_b0335
– volume: 47
  start-page: 613
  issue: 5
  year: 1979
  ident: 10.1016/j.spmi.2015.06.048_b0530
  article-title: Silicon and germanium doping of epitaxial GaAs grown by trimethyl gallium arsenide method
  publication-title: J. Crystal Growth
  doi: 10.1016/0022-0248(79)90002-2
– volume: 29
  start-page: 206
  issue: 3
  year: 2008
  ident: 10.1016/j.spmi.2015.06.048_b0730
  article-title: Vertical enhancement mode InAs nanowire FET with 50nm wrap gate
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/LED.2007.915374
– volume: 39
  start-page: 1683
  issue: 4A
  year: 2000
  ident: 10.1016/j.spmi.2015.06.048_b0660
  article-title: InAlAs/Pseudomorphic InGaAs/InP HEMT with doped InAs/AlAs super lattice
  publication-title: Jap. J. Appl. Phys.
  doi: 10.1143/JJAP.39.1683
– volume: 53
  start-page: 2454
  issue: 10
  year: 2006
  ident: 10.1016/j.spmi.2015.06.048_b0370
  article-title: Implant free high mobility flat band MOSFET: principle of operation
  publication-title: IEEE Trans. Elect. Dev.
  doi: 10.1109/TED.2006.882393
– ident: 10.1016/j.spmi.2015.06.048_b0735
  doi: 10.1109/IEDM.2010.5703307
– ident: 10.1016/j.spmi.2015.06.048_b1230
  doi: 10.1109/MWSYM.1993.276769
– ident: 10.1016/j.spmi.2015.06.048_b0110
– volume: 101
  start-page: 223507
  issue: 22
  year: 2012
  ident: 10.1016/j.spmi.2015.06.048_b0795
  article-title: Lg=60nm recessed In0.7Ga0.3As MOSFETs with Al2O3 insulator
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.4769230
– volume: 54
  start-page: 2091
  issue: 21
  year: 1989
  ident: 10.1016/j.spmi.2015.06.048_b0570
  article-title: Silicon segregation in δ-doped GaAs, characterised by Auger electron spectroscopy
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.101173
– volume: 53
  start-page: 406
  issue: 3
  year: 2006
  ident: 10.1016/j.spmi.2015.06.048_b1300
  article-title: Performance improvement in tensile strained In0.5Al0.5As/InxGa1−xAs/In0.5Al0.5As metamorphic HEMT
  publication-title: IEEE Trans. Elect. Dev.
  doi: 10.1109/TED.2005.863545
– volume: 57
  year: 2003
  ident: 10.1016/j.spmi.2015.06.048_b0020
  article-title: The role of molecular beam epitaxy in recent quantum hall effect physics discoveries
  publication-title: Physica E: Low-Dimensional Syst. Nanostruct.
– volume: 35
  start-page: 342
  issue: 3
  year: 2014
  ident: 10.1016/j.spmi.2015.06.048_b0700
  article-title: In0.53Ga0.47As multiple gate field effect transistor with selectively regrown channels
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/LED.2014.2301843
– volume: 96
  start-page: 27
  year: 1989
  ident: 10.1016/j.spmi.2015.06.048_b0520
  article-title: Orientation dependent amphoteric behaviour of group IV impurities in the molecular beam epitaxial and vapour phase epitaxial growth of GaAs
  publication-title: J. Crystal Growth
  doi: 10.1016/0022-0248(89)90272-8
– volume: 63
  start-page: 1214
  issue: 9
  year: 1993
  ident: 10.1016/j.spmi.2015.06.048_b1020
  article-title: High electron mobility transistor based on a GaN-AlxGa1−xN hetero junction
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.109775
– volume: 22
  start-page: 507
  issue: 11
  year: 2001
  ident: 10.1016/j.spmi.2015.06.048_b1100
  article-title: Ultra high speed pseudomorphic InGaAs/InAlAs HEMTs with 400GHz cut-off frequency
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/55.962645
– volume: 92
  start-page: 222904
  issue: 22
  year: 2008
  ident: 10.1016/j.spmi.2015.06.048_b0245
  article-title: In0.53Ga0.47As based MOS capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm
  publication-title: Appl. Phy. Lett.
  doi: 10.1063/1.2931031
– volume: 60
  start-page: 206
  issue: 1
  year: 2012
  ident: 10.1016/j.spmi.2015.06.048_b1235
  article-title: Characterisation and modelling of cryogenic, ultra low-noise InP HEMTs
  publication-title: IEEE Trans. Elect. Dev.
  doi: 10.1109/TED.2012.2227485
– ident: 10.1016/j.spmi.2015.06.048_b0710
  doi: 10.1109/IEDM.2008.4796796
– ident: 10.1016/j.spmi.2015.06.048_b1090
– volume: 92
  start-page: 153508
  issue: 15
  year: 2008
  ident: 10.1016/j.spmi.2015.06.048_b0215
  article-title: Inversion mode n-channel GaAs FETs with high-κ metal gate
  publication-title: Appl. Phy. Lett.
  doi: 10.1063/1.2912027
– volume: 209
  start-page: 476
  year: 2000
  ident: 10.1016/j.spmi.2015.06.048_b0675
  article-title: Investigation of carbon doped base materials grown by CBE for Al-free InP HBTs
  publication-title: J. Crystal Growth
  doi: 10.1016/S0022-0248(99)00601-6
– ident: 10.1016/j.spmi.2015.06.048_b1055
  doi: 10.1109/ICIPRM.2010.5516257
– volume: 104
  start-page: 163502
  issue: 16
  year: 2014
  ident: 10.1016/j.spmi.2015.06.048_b0825
  article-title: Lg=100nm In0.7Ga0.3As quantum well MOSFETs with atomic layer deposited beryllium oxide as interfacial layer
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.4871504
– volume: 103
  start-page: 233503
  issue: 23
  year: 2013
  ident: 10.1016/j.spmi.2015.06.048_b0435
  article-title: High performance raised source/drain InAs/In0.53Ga0.47As channel MOSFETs with reduced leakage using a vertical spacer
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.4838660
– ident: 10.1016/j.spmi.2015.06.048_b0975
  doi: 10.1109/ICIPRM.2010.5515954
– ident: 10.1016/j.spmi.2015.06.048_b1160
  doi: 10.1109/ICIPRM.2004.1442827
– volume: 99
  start-page: 112113
  issue: 11
  year: 2011
  ident: 10.1016/j.spmi.2015.06.048_b0765
  article-title: III–V MOSFETs enabled by top-down nano wire released process: experiment and simulation
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.3638474
– ident: 10.1016/j.spmi.2015.06.048_b0545
– volume: 67
  start-page: 1969
  issue: 4
  year: 1990
  ident: 10.1016/j.spmi.2015.06.048_b0560
  article-title: Beryllium δ-doping of GaAs grown by MBE
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.345576
– ident: 10.1016/j.spmi.2015.06.048_b1215
– ident: 10.1016/j.spmi.2015.06.048_b0050
– volume: 29
  start-page: 830
  issue: 8
  year: 2008
  ident: 10.1016/j.spmi.2015.06.048_b1140
  article-title: 30-nm InAs pseudomorphic HEMTs on InP substrate with a current gain cut-off frequency of 628GHz
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/LED.2008.2000794
– volume: 27
  start-page: 1147
  issue: 6
  year: 1980
  ident: 10.1016/j.spmi.2015.06.048_b0080
  article-title: Status of the GaAs metal-oxide-semi-conductor technology
  publication-title: IEEE Trans. Elect. Dev.
  doi: 10.1109/T-ED.1980.19998
– ident: 10.1016/j.spmi.2015.06.048_b0085
  doi: 10.1109/ESSDERC.2007.4430979
– volume: 51
  start-page: 1170
  issue: 15
  year: 1987
  ident: 10.1016/j.spmi.2015.06.048_b0580
  article-title: Selectively doped AlxGa1−xAs/GaAs hetero-structures with high 2 DEG concentration n=1.5×1012cm2 for field effect transistors
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.98722
– volume: 46
  start-page: 867
  issue: 6
  year: 2002
  ident: 10.1016/j.spmi.2015.06.048_b0685
  article-title: Doping induced design considerations for InP/In0.53Ga0.47As HBTs
  publication-title: Solid State Electron.
  doi: 10.1016/S0038-1101(01)00341-0
– volume: 17
  start-page: 236
  issue: 5
  year: 2014
  ident: 10.1016/j.spmi.2015.06.048_b0130
  article-title: A brief review of atomic layer deposition: from fundamentals to applications
  publication-title: Mater. Today
  doi: 10.1016/j.mattod.2014.04.026
– ident: 10.1016/j.spmi.2015.06.048_b0835
  doi: 10.1109/IEDM.2014.7047106
– volume: 2
  start-page: 16
  year: 2005
  ident: 10.1016/j.spmi.2015.06.048_b0815
  article-title: Dry etching of electronic oxides, polymers and semiconductors
  publication-title: Plasma Process Polym.
  doi: 10.1002/ppap.200400035
– volume: 40
  start-page: 147
  issue: 2
  year: 1982
  ident: 10.1016/j.spmi.2015.06.048_b1025
  article-title: Electron mobilities in modulation doped Ga0.47In0.53As/Al0.48In0.52As hetero junctions grown by MBE
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.93018
– ident: 10.1016/j.spmi.2015.06.048_b0605
– ident: 10.1016/j.spmi.2015.06.048_b0220
  doi: 10.1109/IEDM.2007.4419020
– volume: 20
  start-page: 068502
  issue: 6
  year: 2011
  ident: 10.1016/j.spmi.2015.06.048_b1290
  article-title: Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition
  publication-title: Chinese Phys. B
  doi: 10.1088/1674-1056/20/6/068502
– ident: 10.1016/j.spmi.2015.06.048_b0350
  doi: 10.1109/DRC.2006.305114
– ident: 10.1016/j.spmi.2015.06.048_b0445
  doi: 10.1109/IEDM.2002.1175829
– volume: 80
  start-page: 448
  issue: 1
  year: 1996
  ident: 10.1016/j.spmi.2015.06.048_b0600
  article-title: Band gap narrowing and the reconciliation of photoluminescence spectra with electrical measurements for epitaxial n-InP
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.362746
– ident: 10.1016/j.spmi.2015.06.048_b1120
  doi: 10.1109/ICIPRM.1997.600214
– ident: 10.1016/j.spmi.2015.06.048_b0385
  doi: 10.1109/IEDM.2008.4796796
– volume: 64
  start-page: 88
  issue: 1
  year: 1994
  ident: 10.1016/j.spmi.2015.06.048_b0610
  article-title: Determination of band gap narrowing and hole density for heavily C-doped GaAs by photoluminescence spectroscopy
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.110877
– volume: 22
  start-page: 368
  issue: 8
  year: 2001
  ident: 10.1016/j.spmi.2015.06.048_b1095
  article-title: Ultra short 25-nm gate lattice matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequency
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/55.936345
– volume: 88
  start-page: 022106
  issue: 2
  year: 2006
  ident: 10.1016/j.spmi.2015.06.048_b0285
  article-title: Metal oxide semiconductor capacitor on GaAs with high-κ gate oxide and amorphous silicon interface passivation layer
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.2164327
– volume: 4
  start-page: 054201
  issue: 5
  year: 2011
  ident: 10.1016/j.spmi.2015.06.048_b0400
  article-title: InP/InGaAs composite MOSFETs with regrown source and Al2O3 gate dielectric exhibiting maximum drain current exceeding 1.3 Ma/μm
  publication-title: Appl. Phys. Exp.
  doi: 10.1143/APEX.4.054201
– year: 1982
  ident: 10.1016/j.spmi.2015.06.048_b0475
– volume: 50
  start-page: 1440
  year: 2006
  ident: 10.1016/j.spmi.2015.06.048_b0690
  article-title: Physical modelling of degeneratively doped compound semiconductors for high performance HBT design
  publication-title: Solid State Electron.
  doi: 10.1016/j.sse.2006.04.047
– volume: 91
  start-page: 212101
  issue: 21
  year: 2007
  ident: 10.1016/j.spmi.2015.06.048_b0375
  article-title: Enhancement mode GaAs metal oxide semiconductor HEMTs with atomic layer deposited Al2O3 as gate dielectric
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.2814052
– volume: 30
  start-page: 1128
  issue: 11
  year: 2009
  ident: 10.1016/j.spmi.2015.06.048_b0740
  article-title: In0.53Ga0.47As channel MOSFETs with self aligned InAs source/drain formed by MEE regrowth
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/LED.2009.2031304
– volume: 33
  start-page: 798
  year: 1994
  ident: 10.1016/j.spmi.2015.06.048_b1080
  article-title: 0.05-μm gate InAlAs/InGaAs high electron mobility transistors and reduction of its short channel effects
  publication-title: Jap. J. Appl. Phys.
  doi: 10.1143/JJAP.33.798
– volume: 53
  start-page: 2504
  issue: 25
  year: 1988
  ident: 10.1016/j.spmi.2015.06.048_b0565
  article-title: Effect of substrate temperature on migration of Si in planar doped GaAs
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.100225
– volume: 111
  start-page: 104511
  year: 2012
  ident: 10.1016/j.spmi.2015.06.048_b0420
  article-title: High mobility In0.53Ga0.47As quantum well MOSFET structures
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.4721328
– volume: 46
  start-page: 3167
  issue: 5B
  year: 2007
  ident: 10.1016/j.spmi.2015.06.048_b0270
  article-title: III–V MOSFETs with high-κ dielectrics
  publication-title: Jpn. J. Appl. Phy.
  doi: 10.1143/JJAP.46.3167
– volume: 19
  start-page: 3425
  issue: 2
  year: 2007
  ident: 10.1016/j.spmi.2015.06.048_b0140
  article-title: Synthesis and surface engineering of complex nano-structures by atomic layer deposition
  publication-title: Adv. Mater.
  doi: 10.1002/adma.200700079
– ident: 10.1016/j.spmi.2015.06.048_b0205
  doi: 10.1109/IEDM.2008.4796695
– volume: 4
  start-page: 153
  issue: 2
  year: 2005
  ident: 10.1016/j.spmi.2015.06.048_b0695
  article-title: Bench marking nanotechnology for high performance and low power logic transistor applications
  publication-title: IEEE Trans. Nanotechnol.
  doi: 10.1109/TNANO.2004.842073
– ident: 10.1016/j.spmi.2015.06.048_b1155
  doi: 10.1109/ICIPRM.2010.5516002
– volume: 118
  start-page: 1645
  issue: 10
  year: 1971
  ident: 10.1016/j.spmi.2015.06.048_b0535
  article-title: Analysis of impurity distribution in homoepitaxial n on n+ films of GaAs
  publication-title: J. Electrochem. Soc.
  doi: 10.1149/1.2407802
– ident: 10.1016/j.spmi.2015.06.048_b0355
  doi: 10.1109/IEDM.2008.4796696
– ident: 10.1016/j.spmi.2015.06.048_b0045
– volume: 94
  start-page: 193502
  issue: 19
  year: 2009
  ident: 10.1016/j.spmi.2015.06.048_b0360
  article-title: High performance MOSFET with mobility 4500cm2/Vs using InP barrier layer
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.3133360
– ident: 10.1016/j.spmi.2015.06.048_b0315
  doi: 10.1109/IEDM.2009.5424358
– volume: 32
  start-page: 1039
  issue: 11
  year: 1996
  ident: 10.1016/j.spmi.2015.06.048_b0805
  article-title: Thermally stable InAlAs/InGaAs hetero junction FET with AlAs/InAs super lattice insertion layer
  publication-title: Electron. Lett.
  doi: 10.1049/el:19960645
– volume: 28
  start-page: 1080
  issue: 12
  year: 2007
  ident: 10.1016/j.spmi.2015.06.048_b0265
  article-title: Enhancement mode GaAs MOSFETs with an In0.3Ga0.7As channel, a mobility of over 5000cm2/V.s, and transconductance of over 475μS/μm
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/LED.2007.910009
– volume: 5
  start-page: 064002
  issue: 6
  year: 2012
  ident: 10.1016/j.spmi.2015.06.048_b0820
  article-title: A self aligned InGaAs quantum well MOSFET fabricated through a lift off free front end process
  publication-title: Appl. Phys. Exp.
  doi: 10.1143/APEX.5.064002
– volume: 47
  start-page: 1636
  year: 2000
  ident: 10.1016/j.spmi.2015.06.048_b0105
  article-title: A comparative study of gate direct tunnelling and drain leakage currents in N-MOSFETs with sub-100 nm gate oxides
  publication-title: IEEE Trans. Elect. Dev.
  doi: 10.1109/16.853042
– volume: 54
  start-page: 2592
  issue: 25
  year: 1989
  ident: 10.1016/j.spmi.2015.06.048_b0555
  article-title: Diffusion and drift of Si dopants in δ-doped n-type AlxGa1−xAs
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.101059
– volume: 66
  start-page: 845
  issue: 7
  year: 1995
  ident: 10.1016/j.spmi.2015.06.048_b0630
  article-title: Tellurium-doped Al0.43Ga0.57As/In0.2GaAs modulation doped hetero-structures by MBE
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.113441
– ident: 10.1016/j.spmi.2015.06.048_b1060
  doi: 10.1109/IEDM.2007.4419013
– volume: 36
  start-page: 223
  issue: 3
  year: 2015
  ident: 10.1016/j.spmi.2015.06.048_b0785
  article-title: Lmathg=80-nm tri-gate quantum well In0.53Ga0.47As metal oxide semiconductor field effect transistors with Al2O3/HfO2 gate stack
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/LED.2015.2393554
– volume: 29
  start-page: 2100
  issue: 24
  year: 1993
  ident: 10.1016/j.spmi.2015.06.048_b1200
  article-title: Frequency divider using InAlAs/InGaAs HEMT DCFL-NOR gates
  publication-title: Electron. Lett.
  doi: 10.1049/el:19931404
– volume: 38
  issue: 8
  year: 1965
  ident: 10.1016/j.spmi.2015.06.048_b0065
  article-title: Cramming more components onto integrated circuits
  publication-title: Electronics
– volume: 19
  start-page: L225
  issue: 5
  year: 1980
  ident: 10.1016/j.spmi.2015.06.048_b1005
  article-title: A new field effect transistor with selectively doped GaAs/n-AlxGa1−xAs hetero junctions
  publication-title: Jap. J. Appl. Phys.
  doi: 10.1143/JJAP.19.L225
– volume: 26
  start-page: 1032
  issue: 7
  year: 1979
  ident: 10.1016/j.spmi.2015.06.048_b1255
  article-title: Optimal noise figure of microwave GaAs MESFETs
  publication-title: IEEE Trans. Elect. Dev.
  doi: 10.1109/T-ED.1979.19541
– volume: 61
  start-page: 3423
  issue: 10
  year: 2014
  ident: 10.1016/j.spmi.2015.06.048_b0880
  article-title: Over 450GHz fT and fmax InP/InGaAs DHBTs with a passivation edge fabricated by utilizing SiN/SiO2 side wall spacers
  publication-title: IEEE Trans. Elect. Dev.
  doi: 10.1109/TED.2014.2349872
– volume: 27
  start-page: 2024
  issue: 4
  year: 2009
  ident: 10.1016/j.spmi.2015.06.048_b0210
  article-title: In0.53Ga0.47As n-metal oxide semiconductor FETs with atomic layer deposited Al2O3, HfO2, and LaAlO3 gate dielectrics
  publication-title: J. Vac. Sci. Technol. B
  doi: 10.1116/1.3125284
– volume: 31
  start-page: 806
  issue: 8
  year: 2010
  ident: 10.1016/j.spmi.2015.06.048_b1250
  article-title: 30-nm InAs PHEMTs with fT=644GHz and fmax=681GHz
  publication-title: IEEE Elect. Dev. Lett.
– volume: 468
  start-page: 286
  issue: 7321
  year: 2010
  ident: 10.1016/j.spmi.2015.06.048_b0720
  article-title: Ultra thin compound semiconductor on insulator layers for high performance nano scale transistors
  publication-title: Nature
  doi: 10.1038/nature09541
– volume: 20
  start-page: 179
  issue: 4
  year: 1999
  ident: 10.1016/j.spmi.2015.06.048_b0030
  article-title: Estimating oxide thickness of tunnel oxides down to 1.4nm using conventional C–V measurement on MOS capacitors
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/55.753759
– volume: 21
  start-page: 2231
  issue: 6
  year: 2003
  ident: 10.1016/j.spmi.2015.06.048_b0160
  article-title: Atomic layer deposition of metal and nitride thin films: current research efforts and applications for semiconductor device processing
  publication-title: J. Vac. Sci. Technol. B
  doi: 10.1116/1.1622676
– ident: 10.1016/j.spmi.2015.06.048_b1315
  doi: 10.1109/IEDM.2005.1609466
– volume: 53
  start-page: 499
  issue: 3
  year: 2013
  ident: 10.1016/j.spmi.2015.06.048_b0075
  article-title: Subthreshold performance of gate engineered FinFET devices and circuit with high-κ dielectrics
  publication-title: Microelectron. Reliab.
  doi: 10.1016/j.microrel.2012.09.008
– volume: 26
  start-page: 530
  issue: 8
  year: 2005
  ident: 10.1016/j.spmi.2015.06.048_b0890
  article-title: InGaAs/ InP DHBTs with 120nm collector having simultaneously high f/Sub/Spl tau//, fmax/Spl 450GHz
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/LED.2005.852519
– volume: 49
  start-page: 1694
  issue: 10
  year: 2002
  ident: 10.1016/j.spmi.2015.06.048_b1110
  article-title: 30-nm two-step recess gate InP based InAlAs/InGaAs HEMTs
  publication-title: IEEE Trans. Elect. Dev.
  doi: 10.1109/TED.2002.803646
– ident: 10.1016/j.spmi.2015.06.048_b1070
  doi: 10.1109/ICIPRM.2008.4702964
– volume: 33
  start-page: 665
  issue: 7
  year: 1978
  ident: 10.1016/j.spmi.2015.06.048_b1010
  article-title: Electron mobilities in modulation doped semiconductor hetero junction super lattice
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.90457
– volume: 42
  start-page: 47
  issue: 1
  year: 2002
  ident: 10.1016/j.spmi.2015.06.048_b0665
  article-title: Bias-stress induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs
  publication-title: Microelectron. Reliab.
  doi: 10.1016/S0026-2714(01)00215-3
– volume: 7
  start-page: 034105
  issue: 3
  year: 2014
  ident: 10.1016/j.spmi.2015.06.048_b0940
  article-title: Type-II InP/GaAsSb DHBTs with fmax>700GHz
  publication-title: Appl. Phys. Exp.
– volume: 43
  start-page: 252
  issue: 2
  year: 1996
  ident: 10.1016/j.spmi.2015.06.048_b1125
  article-title: High performance in InP based enhancement mode HEMTs using non-alloyed ohmic contacts and Pt based buried gate technologies
  publication-title: IEEE Trans. Elect. Dev.
  doi: 10.1109/16.481725
– volume: 87
  issue: 9
  year: 2005
  ident: 10.1016/j.spmi.2015.06.048_b0635
  article-title: Activation energies for Te and Be in metamorphically grown AlSb and InxAl1−xSb layers
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.2032591
– ident: 10.1016/j.spmi.2015.06.048_b0010
  doi: 10.1109/CSICS.2012.6340113
– volume: 51
  start-page: 383
  issue: 1
  year: 1980
  ident: 10.1016/j.spmi.2015.06.048_b0540
  article-title: Complex free carrier profile synthesis by atomic plane doping of MBE GaAs
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.327383
– volume: 32
  start-page: 1068
  issue: 8
  year: 2011
  ident: 10.1016/j.spmi.2015.06.048_b0910
  article-title: Transconductance degradation in near-THz InP DHBTs
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/LED.2011.2157451
– volume: 324
  start-page: 103
  year: 2011
  ident: 10.1016/j.spmi.2015.06.048_b1280
  article-title: Compositionally-graded InGaAs–InGaP alloys and GaAsSb alloys for metamorphic InP on GaAs
  publication-title: J. Crystal Growth
  doi: 10.1016/j.jcrysgro.2011.04.032
– volume: 97
  issue: 12
  year: 2005
  ident: 10.1016/j.spmi.2015.06.048_b0150
  article-title: Surface chemistry of atomic layer deposition: a case study for the trymethyl aluminium/water process
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.1940727
– volume: 60
  start-page: 3027
  issue: 24
  year: 1992
  ident: 10.1016/j.spmi.2015.06.048_b1015
  article-title: Observation of a two dimensional electron gas in low pressure metal organic chemical vapour deposited GaN-AlxGa1−xN hetero junctions
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.106798
– volume: 29
  start-page: 21
  issue: 1
  year: 2008
  ident: 10.1016/j.spmi.2015.06.048_b0955
  article-title: Radio frequency noise characterization and modelling of type-II InP-GaAsSb DHBT
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/LED.2007.912017
– ident: 10.1016/j.spmi.2015.06.048_b1150
  doi: 10.1109/IEDM.2007.4419014
– volume: 28
  start-page: 672
  issue: 8
  year: 2007
  ident: 10.1016/j.spmi.2015.06.048_b1295
  article-title: 35-nm zig zag T-gate In0.52Al0.48As/In0.53Ga0.47As metamorphic GaAs HEMTs with an ultra high fmax of 520GHz
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/LED.2007.901579
– volume: 33
  start-page: 1381
  issue: 10
  year: 2012
  ident: 10.1016/j.spmi.2015.06.048_b0895
  article-title: 480GHz fmax in InP/GaAsSb/InP DHBT with new base isolation μ-air bridge design
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/LED.2012.2210187
– ident: 10.1016/j.spmi.2015.06.048_b1040
– volume: 59
  start-page: 2136
  issue: 8
  year: 2012
  ident: 10.1016/j.spmi.2015.06.048_b1145
  article-title: Improvement of RF and noise characteristics using a cavity structure in InAlAs/InGaAs HEMTs
  publication-title: IEEE Trans. Elect. Dev.
  doi: 10.1109/TED.2012.2200254
– volume: 100
  start-page: 803
  issue: 6
  year: 2013
  ident: 10.1016/j.spmi.2015.06.048_b0100
  article-title: Subthreshold analysis of nanoscale FinFETs for ultra low power applications using high-κ materials
  publication-title: Int. J. Electron., Taylor & Francis group
– volume: 96
  start-page: 103506
  issue: 10
  year: 2010
  ident: 10.1016/j.spmi.2015.06.048_b0330
  article-title: Flourinated HfO2 gate dielectric engineering on and In0.53Ga0.47As MOSFETs
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.3357434
– volume: 24
  start-page: L608
  issue: 8
  year: 1985
  ident: 10.1016/j.spmi.2015.06.048_b0575
  article-title: The delta doped field effect transistor
  publication-title: Jap. J. Appl. Phys.
  doi: 10.1143/JJAP.24.L608
– volume: 41
  start-page: 608
  issue: 6
  year: 2013
  ident: 10.1016/j.spmi.2015.06.048_b0115
  article-title: Nano scale channel engineered double gate MOSFET for mixed signal application using high-κ dielectric
  publication-title: Int. J. Circuit Theory Appl.
  doi: 10.1002/cta.1800
– volume: 29
  start-page: 977
  issue: 9
  year: 2008
  ident: 10.1016/j.spmi.2015.06.048_b0240
  article-title: Inversion mode self aligned In0.53Ga0.47As n-channel MOSFETs with HfAlO gate dielectric and TaN metal gate
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/LED.2008.2001766
– volume: 19
  start-page: 309
  issue: 8
  year: 1998
  ident: 10.1016/j.spmi.2015.06.048_b0280
  article-title: Ga2O3(Gd2O3)/InGaAs enhancement mode n-channel MOSFETs
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/55.704409
– volume: 19
  start-page: 345
  issue: 9
  year: 1998
  ident: 10.1016/j.spmi.2015.06.048_b1320
  article-title: InAlAs/InGaas metamorphic HEMT with high current density and high breakdown voltage
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/55.709638
– issue: June
  year: 1998
  ident: 10.1016/j.spmi.2015.06.048_b0855
  article-title: InP based HBT technology for next generation light wave communication
  publication-title: Microwave J.
– volume: 1
  start-page: 25
  issue: 1
  year: 2011
  ident: 10.1016/j.spmi.2015.06.048_b1240
  article-title: Terahertz monolithic integrated circuits using InP high electron mobility transistors
  publication-title: IEEE Trans. THz Sci. Tech.
  doi: 10.1109/TTHZ.2011.2159539
– volume: 3
  start-page: 3482
  issue: 9
  year: 2011
  ident: 10.1016/j.spmi.2015.06.048_b0180
  article-title: Nano engineering and interfacial engineering of photovoltaics by atomic layer deposition
  publication-title: Nano Scale
– volume: 91
  start-page: 063501
  issue: August
  year: 2007
  ident: 10.1016/j.spmi.2015.06.048_b0310
  article-title: Impact of surface channel treatment im C–V characteristics of GaAs MOS capacitor with Al2O3 gate dielectric
  publication-title: Appl. Phy. Lett.
  doi: 10.1063/1.2764438
– volume: 64
  start-page: 411
  issue: 4
  year: 1994
  ident: 10.1016/j.spmi.2015.06.048_b0515
  article-title: Quantum well lasers with carbon doped cladding layers grown by solid source MBE
  publication-title: Appl. Phys Lett.
  doi: 10.1063/1.111164
– volume: 93
  start-page: 033
  issue: 3
  year: 2008
  ident: 10.1016/j.spmi.2015.06.048_b0275
  article-title: High performance self- aligned inversion channel In0.53Ga0.47As MOSFET with Al2O3/Ga2O3 (Gd2O3) as gate dielectrics
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.2956393
– volume: 6
  start-page: 225
  issue: 3/4
  year: 2014
  ident: 10.1016/j.spmi.2015.06.048_b0865
  article-title: Milli-metre wave hetero integrated sources in InP on BiCMOS technology
  publication-title: Int. J. Microwave Wireless Tech.
  doi: 10.1017/S1759078714000579
– volume: 19
  start-page: 857
  issue: 10
  year: 1976
  ident: 10.1016/j.spmi.2015.06.048_b0590
  article-title: Measurements of band gap narrowing in Si bipolar transistors
  publication-title: Solid State Electron.
  doi: 10.1016/0038-1101(76)90043-5
– volume: 29
  start-page: 553
  issue: 6
  year: 2008
  ident: 10.1016/j.spmi.2015.06.048_b0235
  article-title: In situ surface passivation and CMOS-compatible palladium–germanium contacts for surface channel GaAs MOSFETs
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/LED.2008.921393
– ident: 10.1016/j.spmi.2015.06.048_b0390
  doi: 10.1149/1.3119558
– volume: 18
  start-page: 284
  issue: 6
  year: 1997
  ident: 10.1016/j.spmi.2015.06.048_b1130
  article-title: 0.3μm gate length enhancement mode InAlAs/InGaAs/InP high electron mobility transistors
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/55.585360
– volume: 90
  start-page: 2209
  issue: 7
  year: 2013
  ident: 10.1016/j.spmi.2015.06.048_b0015
  article-title: InP-DHBT-On BiCMOS Technology with fT/fmax of 400/350GHz for heterogeneous integrated millimeter wave sources
  publication-title: IEEE Trans. Elect. Dev.
  doi: 10.1109/TED.2013.2264141
– volume: 35
  start-page: 385
  issue: 3
  year: 2011
  ident: 10.1016/j.spmi.2015.06.048_b0750
  article-title: Electron scattering in buried InGaAs/ high-κ metal oxide semiconductor channels
  publication-title: ECS Trans.
  doi: 10.1149/1.3569931
– ident: 10.1016/j.spmi.2015.06.048_b0440
– volume: 28
  start-page: 100
  issue: 2
  year: 2007
  ident: 10.1016/j.spmi.2015.06.048_b0125
  article-title: 1-μm enhancement mode GaAs n-channel MOSFETs with transconductance exceeding 250mS/mm
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/LED.2006.889502
– volume: 24
  start-page: 1479
  year: 2006
  ident: 10.1016/j.spmi.2015.06.048_b0095
  article-title: Gate dielectric on compound semiconductors by MBE
  publication-title: J. Vac. Sci. Technol. B
  doi: 10.1116/1.2197517
– volume: 24
  start-page: 469
  issue: 7
  year: 2014
  ident: 10.1016/j.spmi.2015.06.048_b0875
  article-title: A 246GHz hetero integrated frequency source in InP on BiCMOS technology
  publication-title: IEEE Microwave Wireless Compon. Lett.
  doi: 10.1109/LMWC.2014.2316220
– volume: 116
  start-page: 124104
  issue: 12
  year: 2014
  ident: 10.1016/j.spmi.2015.06.048_b1045
  article-title: Extremely scaled high-κ/In0.53Ga0.47As gate stacks with low leakage and low interface trap densities
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.4896494
– ident: 10.1016/j.spmi.2015.06.048_b0185
– ident: 10.1016/j.spmi.2015.06.048_b0320
  doi: 10.1109/IEDM.2009.5424354
– volume: 96
  start-page: 072102
  issue: 7
  year: 2010
  ident: 10.1016/j.spmi.2015.06.048_b0760
  article-title: Charge pumping characterization of interface traps in Al2O3 In0.75Ga0.25As MOSFETs
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.3315870
– ident: 10.1016/j.spmi.2015.06.048_b0925
  doi: 10.1109/ICIPRM.2007.381209
– volume: 34
  start-page: 33
  issue: 1
  year: 2013
  ident: 10.1016/j.spmi.2015.06.048_b0945
  article-title: Composition graded AlInP/AlGaAsSb/InP type-II DHBTs with fT/fmax=450/510GHz
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/LED.2012.2224090
– volume: 70
  start-page: 3386
  issue: 25
  year: 1997
  ident: 10.1016/j.spmi.2015.06.048_b0655
  article-title: The impact of using AlGaAs as a carrier supplying layer in an InAlAs/InGaAs HEMT structure on thermal stability
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.119179
– volume: 25
  start-page: 685
  issue: 4
  year: 1996
  ident: 10.1016/j.spmi.2015.06.048_b0650
  article-title: Donor passivation in n-AlInAs layers by fluorine
  publication-title: J. Electron. Mater.
  doi: 10.1007/BF02666524
– ident: 10.1016/j.spmi.2015.06.048_b1305
  doi: 10.1109/ICIPRM.2005.1517436
– volume: 92
  start-page: 202903
  issue: 20
  year: 2008
  ident: 10.1016/j.spmi.2015.06.048_b0230
  article-title: Self aligned n-channel MOSFET on high indium content In0.53Ga0.47As and InP using physical vapour deposition HfO2 and silicon interface passivation layer
  publication-title: Appl. Phy. Lett.
  doi: 10.1063/1.2920438
– volume: 29
  start-page: 294
  issue: 4
  year: 2008
  ident: 10.1016/j.spmi.2015.06.048_b0195
  article-title: High performance inversion type enhancement mode InGaAs MOSFET with maximum drain current exceeding 1A/mm
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/LED.2008.917817
– volume: 25
  start-page: 250
  issue: 5
  year: 2004
  ident: 10.1016/j.spmi.2015.06.048_b0885
  article-title: InGaAs/InP mesa DHBTs with simultaneously high f/Sub/Spl tau// and fmax and low C/sub cb//I/sub C/ratio
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/LED.2004.827288
– volume: 47
  start-page: 1449
  issue: 8
  year: 1999
  ident: 10.1016/j.spmi.2015.06.048_b0860
  article-title: Power performance of InP based single and double HBTs
  publication-title: IEEE Trans. Microwave Theory Tech.
  doi: 10.1109/22.780393
– volume: 16
  start-page: 357
  issue: 8
  year: 1995
  ident: 10.1016/j.spmi.2015.06.048_b1000
  article-title: Transferred substrate Schottky-collector hetero junction bipolar transistors: first results and scaling laws for high fmax
  publication-title: Appl. Phys. Lett.
– volume: 96
  start-page: 253502
  issue: 25
  year: 2010
  ident: 10.1016/j.spmi.2015.06.048_b0325
  article-title: Effects of fluorine incorporated into HfO2 gate dielectrics on InP and In0.53Ga0.47As MOSFETs
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.3457388
– volume: 29
  issue: 9
  year: 2008
  ident: 10.1016/j.spmi.2015.06.048_b0995
  article-title: Abrupt delta doped InP/GaInAs/InP DHBT With 0.45 micron wide T-shaped emitter contacts
  publication-title: IEEE Elect. Dev. Lett.
– volume: 75
  start-page: 357
  issue: 1
  year: 1994
  ident: 10.1016/j.spmi.2015.06.048_b0640
  article-title: Pseudomorphic high electron mobility heterostructures with extremely high conductivity using Te as n-type dopant by low pressure MOCVD
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.355858
– volume: 63
  start-page: 155202
  year: 2001
  ident: 10.1016/j.spmi.2015.06.048_b0670
  article-title: Density functional calculations of carbon doping in III–V compound semiconductors
  publication-title: Phys. Rev. B
  doi: 10.1103/PhysRevB.63.155202
– ident: 10.1016/j.spmi.2015.06.048_b0990
– volume: 35
  start-page: 515
  issue: 5
  year: 2014
  ident: 10.1016/j.spmi.2015.06.048_b0490
  article-title: Asymmetric InGaAs/InP MOSFETs with source/drain engineering
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/LED.2014.2308925
– volume: 80–81
  start-page: 910
  year: 1993
  ident: 10.1016/j.spmi.2015.06.048_b0470
  article-title: Ion implantation of isoelectronic impurities into InP
  publication-title: Nucl. Instr. Meth. B
  doi: 10.1016/0168-583X(93)90707-D
– ident: 10.1016/j.spmi.2015.06.048_b0380
– volume: 47
  start-page: 623
  issue: 6
  year: 1985
  ident: 10.1016/j.spmi.2015.06.048_b0480
  article-title: Photoluminescence of very dilutely C+ ion implanted GaAs
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.96093
– volume: 111
  start-page: 264
  year: 1991
  ident: 10.1016/j.spmi.2015.06.048_b0510
  article-title: A comparison of atomic carbon versus beryllium accepter doping in GaAs grown by MBE
  publication-title: J. Crystal Growth
  doi: 10.1016/0022-0248(91)90982-B
– ident: 10.1016/j.spmi.2015.06.048_b0980
  doi: 10.1109/IEDM.2007.4419032
– ident: 10.1016/j.spmi.2015.06.048_b0260
  doi: 10.1109/IEDM.2007.4419016
– volume: 4
  start-page: 024201
  year: 2011
  ident: 10.1016/j.spmi.2015.06.048_b0415
  article-title: Self aligned Ni InGaAs as source/drain for InGaAs MOSFET
  publication-title: Appl. Phys. Exp.
– ident: 10.1016/j.spmi.2015.06.048_b0005
  doi: 10.1109/CSICS.2011.6062494
– volume: 100
  start-page: 014111
  issue: 1
  year: 2006
  ident: 10.1016/j.spmi.2015.06.048_b0410
  article-title: Band offsets of high-κ gate oxide on III–V semiconductors
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.2213170
– volume: 278
  start-page: 596
  year: 2005
  ident: 10.1016/j.spmi.2015.06.048_b0625
  article-title: Growth of InP high electron mobility transistor structures with Te doping
  publication-title: J. Crystal Growth
  doi: 10.1016/j.jcrysgro.2004.12.070
– volume: 57
  start-page: 2114
  issue: 9
  year: 2009
  ident: 10.1016/j.spmi.2015.06.048_b0930
  article-title: Travelling wave amplifiers in transferred substrate InP-HBt technology
  publication-title: IEEE Trans. Microwave Theory Tech.
  doi: 10.1109/TMTT.2009.2027070
– volume: 33
  start-page: 369
  issue: 3
  year: 2012
  ident: 10.1016/j.spmi.2015.06.048_b0780
  article-title: High frequency performance of self aligned gate last surface channel In0.53Ga0.47As MOSFET
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/LED.2011.2181323
– volume: 26
  issue: 4
  year: 2008
  ident: 10.1016/j.spmi.2015.06.048_b0060
  article-title: Main determinants for III–V metal oxide semiconductor field effect transistors
  publication-title: J. Vac. Sci. Technol. A
  doi: 10.1116/1.2905246
– volume: vol. 41
  start-page: 250
  year: 1994
  ident: 10.1016/j.spmi.2015.06.048_b0465
– volume: 89
  start-page: 012903
  year: 2006
  ident: 10.1016/j.spmi.2015.06.048_b0425
  article-title: Energy band parameters of atomic layer deposition Al2O3/InGaAs hetero structure
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.2218826
– volume: 91
  start-page: 093509
  year: 2007
  ident: 10.1016/j.spmi.2015.06.048_b0430
  article-title: High indium content InGaAs MOS capacitor with amorphous LaAlO3 gate dielectric
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.2776846
– volume: 91
  start-page: 172101
  issue: 17
  year: 2007
  ident: 10.1016/j.spmi.2015.06.048_b0305
  article-title: Metal oxide semiconductor capacitors in GaAs with germanium nitride passivation layer
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.2795802
– ident: 10.1016/j.spmi.2015.06.048_b1205
  doi: 10.1109/ICIPRM.1991.147394
– ident: 10.1016/j.spmi.2015.06.048_b0070
– ident: 10.1016/j.spmi.2015.06.048_b0290
  doi: 10.1109/IEDM.2006.346742
– ident: 10.1016/j.spmi.2015.06.048_b0725
– volume: 90
  start-page: 212104
  issue: May
  year: 2007
  ident: 10.1016/j.spmi.2015.06.048_b0295
  article-title: Atomic layer deposition of insulating nitride, interfacial layers for Germanium MOSFETs with high-κ oxide/tungsten nitride gate stacks
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.2741609
– ident: 10.1016/j.spmi.2015.06.048_b0395
– ident: 10.1016/j.spmi.2015.06.048_b0915
  doi: 10.1109/MWSYM.2010.5518124
– volume: 39
  start-page: 2007
  issue: 9
  year: 1992
  ident: 10.1016/j.spmi.2015.06.048_b1075
  article-title: 50-nm self aligned gate pseudomorphic AlInAs/GaInAs high electron mobility transistors
  publication-title: IEEE Trans. Elect. Dev.
  doi: 10.1109/16.155871
– volume: 28
  start-page: 473
  issue: 6
  year: 2007
  ident: 10.1016/j.spmi.2015.06.048_b0340
  article-title: Enhancement mode buried channel In0.7Ga0.3As/In0.52Al0.48As MOSFETs with high-κ gate dielectrics
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/LED.2007.896813
– volume: 30
  year: 2009
  ident: 10.1016/j.spmi.2015.06.048_b0620
  article-title: Considerations of dopant dependent band gap narrowing for accurate device simulation in abrupt HBTs
  publication-title: J. Semiconductors
  doi: 10.1088/1674-4926/30/4/044003
– volume: 66
  start-page: 863
  issue: 7
  year: 1995
  ident: 10.1016/j.spmi.2015.06.048_b0645
  article-title: Thermal stability of AlInAs/GaInAs/InP heterosructures
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.113412
– volume: 25
  start-page: 520
  issue: 8
  year: 2004
  ident: 10.1016/j.spmi.2015.06.048_b0870
  article-title: Self aligned InP DHBT with fT and fmax over 300GHz in a new manufacturable technology
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/LED.2004.832528
– volume: 479
  start-page: 317
  year: 2011
  ident: 10.1016/j.spmi.2015.06.048_b0810
  article-title: Nanometer-scale electronics with III–V compound semiconductors
  publication-title: Nature
  doi: 10.1038/nature10677
– volume: 103
  start-page: 203502
  issue: 20
  year: 2013
  ident: 10.1016/j.spmi.2015.06.048_b0840
  article-title: Reduction of leakage current in In0.53Ga0.47As channel metal oxide semiconductor field effect transistors using AlAs0.56Sb0.44 confinement layers
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.4831683
– volume: 54
  start-page: 2606
  issue: 10
  year: 2007
  ident: 10.1016/j.spmi.2015.06.048_b1245
  article-title: Logic suitability of 50-nm In0.7Ga0.3As: HEMTs for beyond CMOS applications
  publication-title: IEEE Trans. Elect. Dev.
  doi: 10.1109/TED.2007.904986
– volume: 35
  start-page: 125
  issue: 5
  year: 1992
  ident: 10.1016/j.spmi.2015.06.048_b0595
  article-title: Unified apparent band gap narrowing in n-and p-type silicon
  publication-title: Solid State Electron.
  doi: 10.1016/0038-1101(92)90051-D
– ident: 10.1016/j.spmi.2015.06.048_b0800
  doi: 10.1109/IEDM.2012.6479149
– volume: 3
  start-page: 152
  issue: 6
  year: 1982
  ident: 10.1016/j.spmi.2015.06.048_b1030
  article-title: Depletion mode modulation doped Al0.48In0.52As–Ga0.47In0.53As hetero junction field effect transistors
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/EDL.1982.25519
– ident: 10.1016/j.spmi.2015.06.048_b1175
  doi: 10.1109/IEDM.1998.746339
– volume: 89
  start-page: 5243
  issue: 10
  year: 2001
  ident: 10.1016/j.spmi.2015.06.048_b0025
  article-title: High-κ gate dielectrics: current status and material properties considerations
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.1361065
– volume: 25
  start-page: 702
  issue: 10
  year: 2004
  ident: 10.1016/j.spmi.2015.06.048_b1260
  article-title: Organic TFT array on a paper substrate
  publication-title: IEEE Elect. Dev. Lett.
  doi: 10.1109/LED.2004.836502
– ident: 10.1016/j.spmi.2015.06.048_b0250
  doi: 10.1109/IEDM.2008.4796705
– ident: 10.1016/j.spmi.2015.06.048_b1135
– year: 2010
  ident: 10.1016/j.spmi.2015.06.048_b0455
– ident: 10.1016/j.spmi.2015.06.048_b0705
  doi: 10.1109/IEDM.2010.5703454
– volume: 8
  start-page: 2980
  issue: 3
  year: 1990
  ident: 10.1016/j.spmi.2015.06.048_b0525
  article-title: Delta doping of III–V compound semiconductors: fundamentals and device applications
  publication-title: J. Vac. Sci. Technol. A
  doi: 10.1116/1.576617
– volume: 5
  start-page: 706
  issue: 4
  year: 2005
  ident: 10.1016/j.spmi.2015.06.048_b0790
  article-title: Strained epilayers effectively reduce plasma induced fluorine damage in P-HEMTs
  publication-title: IEEE Trans. Dev. Mater. Reliab.
  doi: 10.1109/TDMR.2005.857874
– ident: 10.1016/j.spmi.2015.06.048_b1325
  doi: 10.1109/IEDM.2009.5424207
– ident: 10.1016/j.spmi.2015.06.048_b1185
  doi: 10.1109/ICIPRM.2001.929171
– volume: 27
  issue: 7
  year: 2012
  ident: 10.1016/j.spmi.2015.06.048_b0170
  article-title: Atomic layer deposition for photovoltaics: applications and prospects for solar cell manufacturing
  publication-title: Semiconductor Sci. Technol.
  doi: 10.1088/0268-1242/27/7/074002
– volume: 53
  start-page: 2661
  issue: 26
  year: 1988
  ident: 10.1016/j.spmi.2015.06.048_b0495
  article-title: Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filament
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.100187
– ident: 10.1016/j.spmi.2015.06.048_b0920
  doi: 10.1109/ICIPRM.2009.5012408
– volume: 46
  start-page: 1074
  issue: 6
  year: 1999
  ident: 10.1016/j.spmi.2015.06.048_b1115
  article-title: High performance 0.1μm gate enhancement mode InAlAs/InGaAs HEMT using a two-step recessed gate technology
  publication-title: IEEE Trans. Elect. Dev.
  doi: 10.1109/16.766866
– volume: 42
  start-page: 5548
  issue: 45
  year: 2003
  ident: 10.1016/j.spmi.2015.06.048_b0145
  article-title: Atomic layer deposition chemistry: recent developments and future challenges
  publication-title: Chem. Int. Ed.
  doi: 10.1002/anie.200301652
SSID ssj0009417
Score 2.1040764
SecondaryResourceType review_article
SourceID crossref
SourceType Enrichment Source
Index Database
StartPage 1
Title A review of InP/InAlAs/InGaAs based transistors for high frequency applications
Volume 86
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1NT4MwGG50xujF6NT4nR68EbYBXYEjmR9zBzVRE2-khZK4bGxx86AHf7tv2wF1fsR5IYSVN2QPeb94-rwInVKRZCzwhe0Sxm3CfWpz0QrtNPQZczjkIEypfV7T7gPpPbYfqymOanfJlDeSt2_3lfwHVbgGuMpdsgsgWxqFC3AO-MIREIbjnzCOjJ0nV_ktGLrKo0E0USeXLJpYMkilcg5EPlF6IEp9wZIaxVb2rFnUr5b5EdtMVu9exrLbN5X8OC3lPJT0PS05-_JcsQ-jPnvVjdReo_rQAS5f9ZfPGmZrwWmXJLXCA_kktGlLK5QU7jIw_Z1jBE7t-r64ZN0d6MMNwydJpWsrvVQtr_lZ_3ouLpVswYKI1o-ljVjaiCUbjwTLaMWF8kD6t8Z7Re0JiZq0XD7-bLOU5vXNP4eRkBiZxf0m2piVBDjS-G6hJZHX0VqnmMRXR6uKpptMttFNhDXieJRhQLyp8W5qtLFCGxtoY0AbS7RxiTY20d5BDxfn952uPRuJYSee401t1yM8zcKEJAlhEKtSARmGgCyRZjxws0xAvU64cCGcepxBNUppSwgaMj8QUFgLbxfV8lEu9hCG36TaZIsHDpiDBcSjLHU8LhXfwNg-cor_JU5mevFybMkg_hmPfWSV94y1Wsovqw8WWn2I1qt39AjV4F0Xx5AQTvmJQv8D0thgTw
linkProvider Elsevier
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=A+review+of+InP%2FInAlAs%2FInGaAs+based+transistors+for+high+frequency+applications&rft.jtitle=Superlattices+and+microstructures&rft.au=Ajayan%2C+J.&rft.au=Nirmal%2C+D.&rft.date=2015-10-01&rft.issn=0749-6036&rft.volume=86&rft.spage=1&rft.epage=19&rft_id=info:doi/10.1016%2Fj.spmi.2015.06.048&rft.externalDBID=n%2Fa&rft.externalDocID=10_1016_j_spmi_2015_06_048
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0749-6036&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0749-6036&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0749-6036&client=summon