Comphy — A compact-physics framework for unified modeling of BTI

• Published in: Microelectronics and reliability Vol. 85; pp. 49 - 65
• Main Authors: Rzepa, G., Franco, J., O’Sullivan, B., Subirats, A., Simicic, M., Hellings, G., Weckx, P., Jech, M., Knobloch, T., Waltl, M., Roussel, P.J., Linten, D., Kaczer, B., Grasser, T.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.06.2018
• Subjects: Bias temperature instabilities; High-k dielectric materials; Semiconductor device reliability; High-k dielectric materials; Semiconductor device reliability; Bias temperature instabilities

Metal-oxide-semiconductor (MOS) devices are affected by generation, transformation, and charging of oxide and interface defects. Despite 50 years of research, the defect structures and the generation mechanisms are not fully understood. Most light has been shed onto the charging mechanisms of pre-ex...