The effects of post-thermal annealing on the optical parameters of indium-doped ZnO thin films
Indium-doped ZnO thin films are deposited on quartz glass slides by RF magnetron sputtering at ambient temperature. The as-deposited films are annealed at different temperatures from 400℃ to 800 ℃ in air for 1 h. Transmittance spectra are used to determine the optical parameters and the thicknesses...
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| Published in | Chinese physics B Vol. 21; no. 4; pp. 491 - 495 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.04.2012
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 1741-4199 |
| DOI | 10.1088/1674-1056/21/4/047305 |
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| Abstract | Indium-doped ZnO thin films are deposited on quartz glass slides by RF magnetron sputtering at ambient temperature. The as-deposited films are annealed at different temperatures from 400℃ to 800 ℃ in air for 1 h. Transmittance spectra are used to determine the optical parameters and the thicknesses of the films before and after annealing using a nonlinear programming method, and the effects of the annealing temperatures on the optical parameters and the thickness are investigated. The optical band gap is determined from the absorption coefficient. The calculated results show that the film thickness and optical parameters both increase first and then decrease with increasing annealing temperature from 400℃ to 800℃. The band gap of the as-deposited ZnO：In thin film is 3.28 eV, and it decreases to 3.17 eV after annealing at 400℃. Then the band gap increases from 3.17 eV to 3.23 eV with increasing annealing temperature from 400℃ to 800℃. |
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| AbstractList | Indium-doped ZnO thin films are deposited on quartz glass slides by RF magnetron sputtering at ambient temperature. The as-deposited films are annealed at different temperatures from 400℃ to 800 ℃ in air for 1 h. Transmittance spectra are used to determine the optical parameters and the thicknesses of the films before and after annealing using a nonlinear programming method, and the effects of the annealing temperatures on the optical parameters and the thickness are investigated. The optical band gap is determined from the absorption coefficient. The calculated results show that the film thickness and optical parameters both increase first and then decrease with increasing annealing temperature from 400℃ to 800℃. The band gap of the as-deposited ZnO：In thin film is 3.28 eV, and it decreases to 3.17 eV after annealing at 400℃. Then the band gap increases from 3.17 eV to 3.23 eV with increasing annealing temperature from 400℃ to 800℃. Indium-doped ZnO thin films are deposited on quartz glass slides by RF magnetron sputtering at ambient temperature. The as-deposited films are annealed at different temperatures from 400 [degrees]C to 300 [degrees]C in air for 1 h. Transmittance spectra are used to determine the optical parameters and the thicknesses of the films before and after annealing using a nonlinear programming method, and the effects of the annealing temperatures on the optical parameters and the thickness are investigated. The optical band gap is determined from the absorption coefficient. The calculated results show that the film thickness and optical parameters both increase first and then decrease with increasing annealing temperature from 400 [degrees]C to 800 [degrees]C. The band gap of the as-deposited ZnO:In thin film is 3.28 eV, and it decreases to 3.17 eV after annealing at 400 [degrees]C. Then the band gap increases from 3.17 eV to 3.23 eV with increasing annealing temperature from 400 [degrees]C to 800 [degrees]C. |
| Author | 彭丽萍 方亮 吴卫东 王雪敏 李丽 |
| AuthorAffiliation | Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China Department of Applied Physics, Chongqing University, Chongqing 400030, China College of Mathematics and Physics, Chongqing University of Posts and Telecommunications, Chongqing 400065, China |
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| Cites_doi | 10.1016/j.apsusc.2007.09.104 10.1016/j.spmi.2008.04.006 10.1016/j.pmatsci.2004.04.001 10.1016/j.jallcom.2009.04.139 10.1016/j.solmat.2010.09.036 10.1088/0022-3735/17/10/023 10.1088/1009-1963/16/4/043 10.1016/j.matlet.2010.06.056 10.1016/j.jpcs.2009.12.062 10.1007/s11664-007-0136-2 10.1063/1.1314299 10.1016/S0040-6090(97)00609-3 10.1006/jcph.1999.6224 10.1016/j.matlet.2007.08.043 10.1088/0022-3735/16/12/023 10.1016/j.jallcom.2006.10.076 10.1088/1009-1963/14/1/022 10.1016/j.physe.2009.07.006 |
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| Notes | Indium-doped ZnO thin films are deposited on quartz glass slides by RF magnetron sputtering at ambient temperature. The as-deposited films are annealed at different temperatures from 400℃ to 800 ℃ in air for 1 h. Transmittance spectra are used to determine the optical parameters and the thicknesses of the films before and after annealing using a nonlinear programming method, and the effects of the annealing temperatures on the optical parameters and the thickness are investigated. The optical band gap is determined from the absorption coefficient. The calculated results show that the film thickness and optical parameters both increase first and then decrease with increasing annealing temperature from 400℃ to 800℃. The band gap of the as-deposited ZnO：In thin film is 3.28 eV, and it decreases to 3.17 eV after annealing at 400℃. Then the band gap increases from 3.17 eV to 3.23 eV with increasing annealing temperature from 400℃ to 800℃. ZnO thin films, optical constants, annealing, transmittance spectra 11-5639/O4 Peng Li-Ping, Fang Liang, Wu Wei-Dong, Wang Xue-Min, and Li Li a） Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China b） Department of Applied Physics, Chongqing University, Chongqing 400030, China c） College of Mathematics and Physics, Chongqing University of Posts and Telecommunications, Chongqing 400065, China ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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| SubjectTerms | Annealing Deposition Film thickness Mathematical analysis Nonlinear programming Spectra Thin films Transmittance Zinc oxide ZnO薄膜 光学参数 光学带隙 热退火 磁控溅射沉积 退火温度 铟掺杂 非线性规划法 |
| Title | The effects of post-thermal annealing on the optical parameters of indium-doped ZnO thin films |
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