The effects of post-thermal annealing on the optical parameters of indium-doped ZnO thin films

Indium-doped ZnO thin films are deposited on quartz glass slides by RF magnetron sputtering at ambient temperature. The as-deposited films are annealed at different temperatures from 400℃ to 800 ℃ in air for 1 h. Transmittance spectra are used to determine the optical parameters and the thicknesses...

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Published inChinese physics B Vol. 21; no. 4; pp. 491 - 495
Main Author 彭丽萍 方亮 吴卫东 王雪敏 李丽
Format Journal Article
LanguageEnglish
Published 01.04.2012
Subjects
Annealing
Deposition
Film thickness
Mathematical analysis
Nonlinear programming
Spectra
Thin films
Transmittance
Zinc oxide
ZnO薄膜
光学参数
光学带隙
热退火
磁控溅射沉积
退火温度
铟掺杂
非线性规划法
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/21/4/047305

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Summary:Indium-doped ZnO thin films are deposited on quartz glass slides by RF magnetron sputtering at ambient temperature. The as-deposited films are annealed at different temperatures from 400℃ to 800 ℃ in air for 1 h. Transmittance spectra are used to determine the optical parameters and the thicknesses of the films before and after annealing using a nonlinear programming method, and the effects of the annealing temperatures on the optical parameters and the thickness are investigated. The optical band gap is determined from the absorption coefficient. The calculated results show that the film thickness and optical parameters both increase first and then decrease with increasing annealing temperature from 400℃ to 800℃. The band gap of the as-deposited ZnO：In thin film is 3.28 eV, and it decreases to 3.17 eV after annealing at 400℃. Then the band gap increases from 3.17 eV to 3.23 eV with increasing annealing temperature from 400℃ to 800℃.
Bibliography:Indium-doped ZnO thin films are deposited on quartz glass slides by RF magnetron sputtering at ambient temperature. The as-deposited films are annealed at different temperatures from 400℃ to 800 ℃ in air for 1 h. Transmittance spectra are used to determine the optical parameters and the thicknesses of the films before and after annealing using a nonlinear programming method, and the effects of the annealing temperatures on the optical parameters and the thickness are investigated. The optical band gap is determined from the absorption coefficient. The calculated results show that the film thickness and optical parameters both increase first and then decrease with increasing annealing temperature from 400℃ to 800℃. The band gap of the as-deposited ZnO：In thin film is 3.28 eV, and it decreases to 3.17 eV after annealing at 400℃. Then the band gap increases from 3.17 eV to 3.23 eV with increasing annealing temperature from 400℃ to 800℃.
ZnO thin films, optical constants, annealing, transmittance spectra
11-5639/O4
Peng Li-Ping, Fang Liang, Wu Wei-Dong, Wang Xue-Min, and Li Li a） Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China b） Department of Applied Physics, Chongqing University, Chongqing 400030, China c） College of Mathematics and Physics, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
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ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/21/4/047305