Realization of a self-powered ZnSnO MSM UV photodetector that uses surface state controlled photovoltaic effect
Self-powered ultraviolet (UV) photodetectors (PDs) that use a vertical p-n junction generally involve a complex fabrication process if they are to be integrated with optoelectronic integrated circuits (OEICs). This study demonstrates the fabrication of a self-powered metal-semiconductor-metal (MSM)...
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Published in | Ceramics international Vol. 47; no. 2; pp. 1785 - 1791 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Elsevier Ltd
15.01.2021
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Subjects | |
Online Access | Get full text |
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Summary: | Self-powered ultraviolet (UV) photodetectors (PDs) that use a vertical p-n junction generally involve a complex fabrication process if they are to be integrated with optoelectronic integrated circuits (OEICs). This study demonstrates the fabrication of a self-powered metal-semiconductor-metal (MSM) UV PD with simple planar structure using nontoxic and earth abundant ZnSnO (ZTO). The self-powering characteristic is realized using a localized UV-assisted thermal annealing (LUV-TA) process that selectively modifies the surface states underneath different contacts and creates asymmetric Schottky barrier heights (SBHs) for the MSM PD. The a-ZTO MSM PD with assymmetric SBHs operates at a zero bias and has a responsivity of 18.2 mA/W at 350 nm. The open-circuit voltage is 0.40 V under UV illumination at a wavelength of 365 nm (50 mW/cm2). The device exhibits a fast response speed, with a rise time of 38 ms and a decay time of 180 ms. This study demonstrates that this strategy can be extended to other MSM PDs, particularly those that use an amorphous oxide semiconductor as the active layer. |
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ISSN: | 0272-8842 1873-3956 |
DOI: | 10.1016/j.ceramint.2020.09.004 |