A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate - 付强 张波 罗小蓉 李肇基 (Chinese physics B, 2013)
Keywords: Breakdown; Delay; Dielectrics; Electric potential; Insulated gate bipolar transistors; Simulation; Trenches; Voltage; Voltage drop; 介电; 关断损耗; 导通电阻; 栅极; 沟槽; 硅衬底; 绝缘体; 绝缘栅双极晶体管