Review—Radiation Damage in Wide and Ultra-Wide Bandgap Semiconductors - Pearton, S. J.; Aitkaliyeva, Assel; Xian, Minghan; Ren, Fan; Khachatrian, Ani; Ildefonso, Adrian; Islam, Zahabul; Jafar Rasel, Md Abu; Haque, Aman; Polyakov, A. Y.; Kim, Jihyun (ECS journal of solid state science and technology, 2021)
Keywords: Deep level transient spectroscopy; Electron Devices - III-V; Ga2O3, gallium oxide; GaN, gallium nitride; Microelectronics - Semiconductor Materials; Semiconductors; SiC, silicon carbide