Investigation of moisture-assisted fracture in SiO2 films using a channel cracking technique

The technique of channel cracking was developed to study moisture-assisted crack growth in SiO2 films, which are used widely in many silicon-based technologies. Films of various residual stresses from tensile to compressive were PECVD deposited, pre-cracked and subjected to an applied uniform tensil...

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Published inActa materialia Vol. 52; no. 12; pp. 3621 - 3629
Main Authors MCELHANEY, Kevin W, QING MA
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Science 12.07.2004
Subjects
Applied sciences
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Metals. Metallurgy
Physics
Rupture
Cracking
Solid state physics
Mechanical properties
Metallurgy
Subcritical crack growth
Thin-film toughness
Silica
Thin film
Crack propagation
Fracture toughness
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Abstract The technique of channel cracking was developed to study moisture-assisted crack growth in SiO2 films, which are used widely in many silicon-based technologies. Films of various residual stresses from tensile to compressive were PECVD deposited, pre-cracked and subjected to an applied uniform tensile stress by bending the silicon substrate using a 4-point beam-bending fixture. The tests were performed in controlled environments: dry ( < 2% RH), ambient (40-60% RH) and wet ( > 90% RH). Crack velocities were varied by changing the applied stress and measured by optically monitoring crack growth in situ. It was observed that under the same moisture conditions, films with higher compressive stresses were tougher than those with higher tensile stresses. The presence of moisture at the crack tip was found to reduce the films' resistance to cracking dramatically. The three principal regions of moisture-assisted cracking established by Weiderhorn in a bulk glass system were also observed.
AbstractList The technique of channel cracking was developed to study moisture-assisted crack growth in SiO2 films, which are used widely in many silicon-based technologies. Films of various residual stresses from tensile to compressive were PECVD deposited, pre-cracked and subjected to an applied uniform tensile stress by bending the silicon substrate using a 4-point beam-bending fixture. The tests were performed in controlled environments: dry ( < 2% RH), ambient (40-60% RH) and wet ( > 90% RH). Crack velocities were varied by changing the applied stress and measured by optically monitoring crack growth in situ. It was observed that under the same moisture conditions, films with higher compressive stresses were tougher than those with higher tensile stresses. The presence of moisture at the crack tip was found to reduce the films' resistance to cracking dramatically. The three principal regions of moisture-assisted cracking established by Weiderhorn in a bulk glass system were also observed.
Author QING MA
MCELHANEY, Kevin W
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  organization: Intel Corporation, Microsystems Technology, SC9-09, 2200 Mission College Blvd., Santa Clara, CA 95052, United States
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10.1115/1.1379529
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Issue 12
Keywords Rupture
Cracking
Solid state physics
Mechanical properties
Metallurgy
Subcritical crack growth
Thin-film toughness
Silica
Thin film
Crack propagation
Fracture toughness
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SubjectTerms Applied sciences
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Metals. Metallurgy
Physics
Title Investigation of moisture-assisted fracture in SiO2 films using a channel cracking technique
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