Recent advances and prospects for a GaN-based hybrid type ultraviolet photodetector

• Published in: Semiconductor science and technology Vol. 39; no. 7; pp. 73001 - 73026
• Main Authors: Zhang, Jiaxin, Deng, Liqiong, Xia, Shihong, Guo, Chenyu, Liu, Kunzi, Chen, Li, Liu, Wei, Xiao, Hui, Yang, Zhenhai, Guo, Wei, Ye, Jichun
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.07.2024
• Subjects: GaN; heterojunction; III-nitride semiconductor; photodetector; UV photodiode

Solid-state ultraviolet (UV) photodetectors (PDs) have received significant attention due to their advantages of small size, absence of external cooling, high selectivity and the ability to utilize the energy band structure semiconductor materials to achieve detection across various wavelengths. III...