Numerical simulation of the performance of the a-Si：H/a-SiGe：H/a-SiGe：H tandem solar cell
The computer program AMPS-1D（analysis of microelectronic and photonic structures） has been employed to simulate the performance of the a-Si：H/a-SiGe：H/a-SiGe：H triple-junction solar cell at the radiation of AM1.5G（100 mW/cm2/ and room temperature. Firstly, three sub-cells with band gaps of 1.8, 1.6...
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| Published in | Journal of semiconductors Vol. 35; no. 3; pp. 91 - 96 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.03.2014
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| Abstract | The computer program AMPS-1D（analysis of microelectronic and photonic structures） has been employed to simulate the performance of the a-Si：H/a-SiGe：H/a-SiGe：H triple-junction solar cell at the radiation of AM1.5G（100 mW/cm2/ and room temperature. Firstly, three sub-cells with band gaps of 1.8, 1.6 and 1.4 eV are simulated, respectively. The simulation results indicate that the density of defect states is an important factor, which affects the open circuit voltage and the filling factor of the solar cell. The two-step current matching method and the control variate method are employed in the simulation. The results show that the best solar cell performance would be achieved when the intrinsic layer thickness from top to bottom is set to be 70, 180 and 220 nm, respectively. We also optimize the tunnel-junction structure of the solar cell reasonably, the simulation results show that the open circuit voltage, filling factor and conversion efficiency are all improved and the S-shape current density–voltage curve disappears during optimizing the tunnel-junction structure. Besides, the diagram of the energy band and the carrier recombination rate are also analyzed. Finally, our simulation data are compared to the experimental data published in other literature. It is demonstrated that the numerical results agree with the experimental ones very well. |
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| AbstractList | The computer program AMPS-1D（analysis of microelectronic and photonic structures） has been employed to simulate the performance of the a-Si：H/a-SiGe：H/a-SiGe：H triple-junction solar cell at the radiation of AM1.5G（100 mW/cm2/ and room temperature. Firstly, three sub-cells with band gaps of 1.8, 1.6 and 1.4 eV are simulated, respectively. The simulation results indicate that the density of defect states is an important factor, which affects the open circuit voltage and the filling factor of the solar cell. The two-step current matching method and the control variate method are employed in the simulation. The results show that the best solar cell performance would be achieved when the intrinsic layer thickness from top to bottom is set to be 70, 180 and 220 nm, respectively. We also optimize the tunnel-junction structure of the solar cell reasonably, the simulation results show that the open circuit voltage, filling factor and conversion efficiency are all improved and the S-shape current density–voltage curve disappears during optimizing the tunnel-junction structure. Besides, the diagram of the energy band and the carrier recombination rate are also analyzed. Finally, our simulation data are compared to the experimental data published in other literature. It is demonstrated that the numerical results agree with the experimental ones very well. The computer program AMPS-1D (analysis of microelectronic and photonic structures) has been employed to simulate the performance of the a-Si:H/a-SiGe:H/a-SiGe:H triple-junction solar cell at the radiation of AM1.5G (100 mW/cm super(2)) and room temperature. Firstly, three sub-cells with band gaps of 1.8, 1.6 and 1.4 eV are simulated, respectively. The simulation results indicate that the density of defect states is an important factor, which affects the open circuit voltage and the filling factor of the solar cell. The two-step current matching method and the control variate method are employed in the simulation. The results show that the best solar cell performance would be achieved when the intrinsic layer thickness from top to bottom is set to be 70, 180 and 220 nm, respectively. We also optimize the tunnel-junction structure of the solar cell reasonably, the simulation results show that the open circuit voltage, filling factor and conversion efficiency are all improved and the S-shape current density-voltage curve disappears during optimizing the tunnel-junction structure. Besides, the diagram of the energy band and the carrier recombination rate are also analyzed. Finally, our simulation data are compared to the experimental data published in other literature. It is demonstrated that the numerical results agree with the experimental ones very well. |
| Author | 柯少颖 王茺 潘涛 杨杰 杨宇 |
| AuthorAffiliation | Institute of Optoelectronic Information Materials, Yunnan University, Kunming 650091, China |
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| CitedBy_id | crossref_primary_10_1007_s11082_021_03259_2 crossref_primary_10_1007_s11664_019_07898_w crossref_primary_10_1007_s42341_019_00136_4 crossref_primary_10_1007_s12596_023_01435_z crossref_primary_10_1109_JPHOTOV_2017_2766522 crossref_primary_10_1016_j_ijleo_2022_169736 crossref_primary_10_1364_OE_26_00A626 crossref_primary_10_1142_S2047684117500178 |
| Cites_doi | 10.1149/2.020202esl 10.1063/1.118761 10.1016/S0927-0248(02)00096-X 10.1016/j.solmat.2012.02.021 10.1063/1.89674 10.1016/S0927-0248(99)00139-7 10.1016/S0927-0248(00)00186-0 10.1016/j.tsf.2005.01.058 10.1016/j.spmi.2006.07.003 10.1016/j.jnoncrysol.2005.11.085 10.1143/JJAP.24.909 10.1016/S0927-0248(00)00195-1 10.3923/jas.2011.2932.2939 10.1016/j.mejo.2005.09.002 10.1016/j.sna.2005.12.038 10.1016/j.tsf.2012.10.060 10.1016/j.jnoncrysol.2005.12.053 10.1016/S0022-3093(98)00319-6 10.1016/S0038-1101(99)00135-5 10.1016/j.tsf.2011.12.083 10.1016/j.solmat.2004.07.025 10.1016/j.jnoncrysol.2011.12.103 10.1016/j.vacuum.2012.09.004 10.1016/j.egypro.2012.05.084 10.1007/s003390050987 10.1016/j.solmat.2011.10.010 |
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| Notes | 11-5781/TN The computer program AMPS-1D（analysis of microelectronic and photonic structures） has been employed to simulate the performance of the a-Si：H/a-SiGe：H/a-SiGe：H triple-junction solar cell at the radiation of AM1.5G（100 mW/cm2/ and room temperature. Firstly, three sub-cells with band gaps of 1.8, 1.6 and 1.4 eV are simulated, respectively. The simulation results indicate that the density of defect states is an important factor, which affects the open circuit voltage and the filling factor of the solar cell. The two-step current matching method and the control variate method are employed in the simulation. The results show that the best solar cell performance would be achieved when the intrinsic layer thickness from top to bottom is set to be 70, 180 and 220 nm, respectively. We also optimize the tunnel-junction structure of the solar cell reasonably, the simulation results show that the open circuit voltage, filling factor and conversion efficiency are all improved and the S-shape current density–voltage curve disappears during optimizing the tunnel-junction structure. Besides, the diagram of the energy band and the carrier recombination rate are also analyzed. Finally, our simulation data are compared to the experimental data published in other literature. It is demonstrated that the numerical results agree with the experimental ones very well. tandem solar cell conversion efficiency tunnel junction optical band gap current matching ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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| References | 22 23 24 26 Hu W (15) 2006; 25 27 28 29 Li M B (25) 2012; 40 31 10 32 11 Tissot J L (6) 2000 13 Yue G (30) 2008 14 16 17 18 Uesugi T (3) 1985; 24 Belfar A (12) 2011; 11 1 2 Hou J Y (19) 1991 4 5 7 8 9 20 21 |
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| SubjectTerms | a-Si Computer simulation Density Energy gaps (solid state) Mathematical models Open circuit voltage Photovoltaic cells Semiconductors Solar cells 串联 仿真结果 光子结构 填充因子 太阳能电池 性能 数值模拟 |
| Title | Numerical simulation of the performance of the a-Si：H/a-SiGe：H/a-SiGe：H tandem solar cell |
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