Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs

• Published in: Microelectronics and reliability Vol. 80; pp. 68 - 78
• Main Authors: Aichinger, Thomas, Rescher, Gerald, Pobegen, Gregor
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.01.2018
• Subjects: BTI; Device preconditioning; SiC MOSFET; Threshold voltage hysteresis; Vendor analysis; Device preconditioning; Threshold voltage hysteresis; SiC MOSFET; BTI; Vendor analysis

Silicon carbide (SiC) based metal-oxide semiconductor-field-effect-transistors (MOSFETs) are increasingly entering the high power device market. Besides all the well-known benefits which come along with these new generations of switches, the nature of the wide bandgap material and the different prop...