Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs
Silicon carbide (SiC) based metal-oxide semiconductor-field-effect-transistors (MOSFETs) are increasingly entering the high power device market. Besides all the well-known benefits which come along with these new generations of switches, the nature of the wide bandgap material and the different prop...
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| Published in | Microelectronics and reliability Vol. 80; pp. 68 - 78 |
|---|---|
| Main Authors | , , |
| Format | Journal Article |
| Language | English |
| Published |
Elsevier Ltd
01.01.2018
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| Subjects | |
| Online Access | Get full text |
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| Abstract | Silicon carbide (SiC) based metal-oxide semiconductor-field-effect-transistors (MOSFETs) are increasingly entering the high power device market. Besides all the well-known benefits which come along with these new generations of switches, the nature of the wide bandgap material and the different properties of the semiconductor-dielectric interface involve some natural peculiarities in threshold voltage variation and bias-temperature-instability (BTI) which differ from comparable silicon (Si) MOSFET counterparts and which need to be understood and assessed. The target of this paper is to highlight such differences, explain their relation to the semiconductor material, challenge their relevance for the application and define their consequences with regard to datasheet specifications. Most of the new effects can be understood by means of simple physical models and do not compromise the reliability of the device. However, it turns out that the standard test procedures typically used to characterize threshold voltage and threshold voltage drifts for Si devices need to be adapted for SiC MOSFETs. A new measure-stress-measure procedure for BTI evaluation of SiC MOSFETs is proposed which allows distinguishing between reversible threshold voltage hysteresis and more permanent threshold voltage drift (BTI). The measurement pattern is then used to assess the VTH stability of recently launched SiC MOSFET parts. The tested devices differ considerably in BTI drift amplitude and drift variation. The differences are attributed to variations in device processing and device design.
•Application relevance of BTI for SiC MOSFETs•Model explaining the threshold voltage hysteresis effect in SiC MOSFETs•Application relevant BTI testing of SiC MOSFETs using device preconditioning•Analysis of BTI in commercially available SiC MOSFET devices |
|---|---|
| AbstractList | Silicon carbide (SiC) based metal-oxide semiconductor-field-effect-transistors (MOSFETs) are increasingly entering the high power device market. Besides all the well-known benefits which come along with these new generations of switches, the nature of the wide bandgap material and the different properties of the semiconductor-dielectric interface involve some natural peculiarities in threshold voltage variation and bias-temperature-instability (BTI) which differ from comparable silicon (Si) MOSFET counterparts and which need to be understood and assessed. The target of this paper is to highlight such differences, explain their relation to the semiconductor material, challenge their relevance for the application and define their consequences with regard to datasheet specifications. Most of the new effects can be understood by means of simple physical models and do not compromise the reliability of the device. However, it turns out that the standard test procedures typically used to characterize threshold voltage and threshold voltage drifts for Si devices need to be adapted for SiC MOSFETs. A new measure-stress-measure procedure for BTI evaluation of SiC MOSFETs is proposed which allows distinguishing between reversible threshold voltage hysteresis and more permanent threshold voltage drift (BTI). The measurement pattern is then used to assess the VTH stability of recently launched SiC MOSFET parts. The tested devices differ considerably in BTI drift amplitude and drift variation. The differences are attributed to variations in device processing and device design.
•Application relevance of BTI for SiC MOSFETs•Model explaining the threshold voltage hysteresis effect in SiC MOSFETs•Application relevant BTI testing of SiC MOSFETs using device preconditioning•Analysis of BTI in commercially available SiC MOSFET devices |
| Author | Aichinger, Thomas Rescher, Gerald Pobegen, Gregor |
| Author_xml | – sequence: 1 givenname: Thomas orcidid: 0000-0002-6866-8141 surname: Aichinger fullname: Aichinger, Thomas email: thomas.aichinger@infineon.com organization: Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach, Austria – sequence: 2 givenname: Gerald surname: Rescher fullname: Rescher, Gerald organization: KAI GmbH, Europastraße 8, 9524 Villach, Austria – sequence: 3 givenname: Gregor orcidid: 0000-0001-7046-0617 surname: Pobegen fullname: Pobegen, Gregor organization: KAI GmbH, Europastraße 8, 9524 Villach, Austria |
| BookMark | eNqFkNFKwzAUhoNMcJu-guQFWnPSrmnBC2XoFCZDNsG7kKan7oyuHUk28O3tmN54s6sDP-f74f9GbNB2LTJ2CyIGAdndJt6SdZ3DJpYCVAwQCyku2BByJaMihc8BGwohs0gqSK_YyPuNEEIJgCF7X60d-nXXVPzQNcF8Id-h3TdkHAVCz01b8ZKM5wG3O3Qm7B1yan0wJTWnl67mS5ryt8Xy-Wnlr9llbRqPN793zD76ePoSzRez1-njPLIJyBDlRV4amWRmkuemTkpMsqrOJVhlVW2gAIUTO0krYdFaJZUQqZKlraBQMpG2TsYsO_X22713WOudo61x3xqEPorRG_0nRh_FaADdi-nB-3-gpWACdW1whprz-MMJx37cgdBpbwlbixU5tEFXHZ2r-AFjgYdY |
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| ContentType | Journal Article |
| Copyright | 2017 Elsevier Ltd |
| Copyright_xml | – notice: 2017 Elsevier Ltd |
| DBID | AAYXX CITATION |
| DOI | 10.1016/j.microrel.2017.11.020 |
| DatabaseName | CrossRef |
| DatabaseTitle | CrossRef |
| DatabaseTitleList | |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering |
| EISSN | 1872-941X |
| EndPage | 78 |
| ExternalDocumentID | 10_1016_j_microrel_2017_11_020 S0026271417305498 |
| GroupedDBID | --K --M .DC .~1 0R~ 123 1B1 1~. 1~5 29M 4.4 457 4G. 5VS 7-5 71M 8P~ 9JN AABNK AABXZ AACTN AAEDT AAEDW AAEPC AAIAV AAIKJ AAKOC AALRI AAOAW AAQFI AAQXK AAXUO AAYFN ABBOA ABFNM ABFRF ABJNI ABMAC ABXDB ABXRA ABYKQ ACDAQ ACGFS ACNNM ACRLP ACZNC ADBBV ADEZE ADJOM ADMUD ADTZH AEBSH AECPX AEFWE AEKER AENEX AEZYN AFKWA AFRZQ AFTJW AGHFR AGUBO AGYEJ AHHHB AHJVU AHZHX AIALX AIEXJ AIKHN AITUG AJBFU AJOXV ALMA_UNASSIGNED_HOLDINGS AMFUW AMRAJ AOUOD AXJTR AZFZN BJAXD BKOJK BLXMC CS3 DU5 EBS EFJIC EFLBG EJD EO8 EO9 EP2 EP3 F5P FDB FEDTE FGOYB FIRID FNPLU FYGXN G-2 G-Q GBLVA GBOLZ HVGLF HZ~ IHE J1W JJJVA KOM LY7 M41 MAGPM MO0 N9A O-L O9- OAUVE OZT P-8 P-9 P2P PC. Q38 R2- RIG RNS ROL RPZ RXW SDF SDG SES SET SEW SPC SPCBC SPD SSM SST SSV SSZ T5K T9H TAE UHS UNMZH WUQ XOL ZMT ~G- AATTM AAXKI AAYWO AAYXX ABWVN ACRPL ACVFH ADCNI ADNMO AEIPS AEUPX AFJKZ AFPUW AFXIZ AGCQF AGQPQ AGRNS AIGII AIIUN AKBMS AKRWK AKYEP ANKPU APXCP BNPGV CITATION SSH |
| ID | FETCH-LOGICAL-c312t-898ba236a588af3be36df821c7c7fa1917e5c54d0cecc72700472bcd197232cf3 |
| IEDL.DBID | .~1 |
| ISSN | 0026-2714 |
| IngestDate | Tue Jul 01 01:27:26 EDT 2025 Thu Apr 24 22:53:33 EDT 2025 Fri Feb 23 02:18:37 EST 2024 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Keywords | Device preconditioning Threshold voltage hysteresis SiC MOSFET BTI Vendor analysis |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-c312t-898ba236a588af3be36df821c7c7fa1917e5c54d0cecc72700472bcd197232cf3 |
| ORCID | 0000-0002-6866-8141 0000-0001-7046-0617 |
| PageCount | 11 |
| ParticipantIDs | crossref_primary_10_1016_j_microrel_2017_11_020 crossref_citationtrail_10_1016_j_microrel_2017_11_020 elsevier_sciencedirect_doi_10_1016_j_microrel_2017_11_020 |
| ProviderPackageCode | CITATION AAYXX |
| PublicationCentury | 2000 |
| PublicationDate | January 2018 2018-01-00 |
| PublicationDateYYYYMMDD | 2018-01-01 |
| PublicationDate_xml | – month: 01 year: 2018 text: January 2018 |
| PublicationDecade | 2010 |
| PublicationTitle | Microelectronics and reliability |
| PublicationYear | 2018 |
| Publisher | Elsevier Ltd |
| Publisher_xml | – name: Elsevier Ltd |
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| SSID | ssj0007011 |
| Score | 2.5711856 |
| Snippet | Silicon carbide (SiC) based metal-oxide semiconductor-field-effect-transistors (MOSFETs) are increasingly entering the high power device market. Besides all... |
| SourceID | crossref elsevier |
| SourceType | Enrichment Source Index Database Publisher |
| StartPage | 68 |
| SubjectTerms | BTI Device preconditioning SiC MOSFET Threshold voltage hysteresis Vendor analysis |
| Title | Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs |
| URI | https://dx.doi.org/10.1016/j.microrel.2017.11.020 |
| Volume | 80 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV1La8MwDDalu2yHsSfrHsWHXdMmzsPusZSVbqMdoy30FmzHhpQtLW123W-flMfWwaCHnUKCRYKsyJItfR8h90kidaiQvcyK0IF8wzgKEg3HdY2BAFmpXsGiMJ5Eo3nwtAgXDTKoe2GwrLLy_aVPL7x19aRbabO7TlPs8WUR417ggZFCloMNv0HA0co7nz9lHtz1StY8Fjk4eqdLeNl5x6K3jcEjCI93EM0Teb__WqB2Fp3hCTmuokXaLz_olDRMdkaOdjAEz8nrDGZji4dIFDxNDu6BrpHwNpWbAiyVyiyhKpVbiihUFYQyTTEqLOpiccjK0mk6oOOX6fBhtr0gc7gMRk7Fk-Bo32O5I3pCSeZHMhRCWl8ZP0qsYJ7mmluJCZkJdRgkrob54njSHHCmdFIwjjFt_UvSzFaZuSLUtRiPhQL_9cC6UiRaahkkEJdE8BLTImGtnFhXIOLIZfEW19Viy7hWaoxKhQwjBqW2SPdbbl3CaOyV6NW6j38ZRAy-fo_s9T9kb8gh3Ilyl-WWNPPNh7mDuCNX7cKw2uSg__g8mnwBVJHZBw |
| linkProvider | Elsevier |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwtV3JTsMwEB0VOAAHxCp2fIBj2sTZ3AMHVEAF2iLUInELtuNIQVCqtghx4af4QWayQJGQekBck0yW59HzTDyeB3AYx1L7itTLEuFbmG8YS2GiYdm2MRggK1XPVBTanaB5613e-XcV-Cj3wlBZZcH9OadnbF0cqRVo1gZpSnt8ecBDx3PQSTHLEUVl5ZV5e8W8bXR8cYqDfMT5-Vmv0bQKaQFLuw4fW6IulORuIH0hZOIq4wZxIrijQx0mknIY42vfi22NnxjS4qwXcqXjTKSL68TF-87AnId0QbIJ1ffvupLQdnKZPh5Y9HoT25Ifqk9UZTc0tObhhFVqH0pC47_NiBOz3PkyLBXhKTvJEViBiumvwuJE08I1uOnh8I9o1YohtY2Rj9iAFHZTOcy6szLZj5lK5YhR26uiZzNLKQzNCnHpkueEddMGa193EbbROtz-C3obMNt_7ptNYHZCAaAviFy8xJYi1lJLL8ZAKMCHmC3wS3AiXXQtJ_GMx6gsT3uISlAjAhVTmghB3YLal90g79sx1aJeYh_98MAIJ5cpttt_sD2A-Wav3YpaF52rHVjAMyL_xbMLs-Phi9nDoGes9jMnY3D_3179CWG2FNY |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Threshold+voltage+peculiarities+and+bias+temperature+instabilities+of+SiC+MOSFETs&rft.jtitle=Microelectronics+and+reliability&rft.au=Aichinger%2C+Thomas&rft.au=Rescher%2C+Gerald&rft.au=Pobegen%2C+Gregor&rft.date=2018-01-01&rft.issn=0026-2714&rft.volume=80&rft.spage=68&rft.epage=78&rft_id=info:doi/10.1016%2Fj.microrel.2017.11.020&rft.externalDBID=n%2Fa&rft.externalDocID=10_1016_j_microrel_2017_11_020 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0026-2714&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0026-2714&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0026-2714&client=summon |