APA (7th ed.) Citation

Aichinger, T., Rescher, G., & Pobegen, G. (2018). Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs. Microelectronics and reliability, 80, 68-78. https://doi.org/10.1016/j.microrel.2017.11.020

Chicago Style (17th ed.) Citation

Aichinger, Thomas, Gerald Rescher, and Gregor Pobegen. "Threshold Voltage Peculiarities and Bias Temperature Instabilities of SiC MOSFETs." Microelectronics and Reliability 80 (2018): 68-78. https://doi.org/10.1016/j.microrel.2017.11.020.

MLA (9th ed.) Citation

Aichinger, Thomas, et al. "Threshold Voltage Peculiarities and Bias Temperature Instabilities of SiC MOSFETs." Microelectronics and Reliability, vol. 80, 2018, pp. 68-78, https://doi.org/10.1016/j.microrel.2017.11.020.