Transport properties and electroresistance of manganite based heterostructure
In the present communication, ZnO/La0.7Sr0.3MnO3/Al2O3 (ZnO/LSMO/Al2O3) heterostructure was grown using chemical solution deposition (CSD) technique. X–ray diffraction (XRD) measurement confirms the (100) crystallographic oriented growth of LSMO manganite and polycrystalline hexagonal growth of ZnO...
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| Published in | Ceramics international Vol. 45; no. 15; pp. 19456 - 19466 |
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| Main Authors | , , , , , , , , |
| Format | Journal Article |
| Language | English |
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Elsevier Ltd
15.10.2019
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| Abstract | In the present communication, ZnO/La0.7Sr0.3MnO3/Al2O3 (ZnO/LSMO/Al2O3) heterostructure was grown using chemical solution deposition (CSD) technique. X–ray diffraction (XRD) measurement confirms the (100) crystallographic oriented growth of LSMO manganite and polycrystalline hexagonal growth of ZnO layer. Temperature dependent resistivity behavior under different applied magnetic fields, performed for two different geometries [current in plane (CIP) and current perpendicular to plane (CPP)], suggests the modifications in metal to insulator transition temperature TP and alterations in resistivity with applied magnetic field and measurement geometry. This also implies the better charge conduction across the ZnO/LSMO interface (CPP) as compared to LSMO film layer (CIP). Various charge conduction mechanisms have been employed to understand the charge transport for observed low temperature resistivity minimum, metallic behavior, insulating state and magnetoresistance (MR) of LSMO film and ZnO/LSMO interface. Electroresistance (ER) and field effect configuration (FEC) have been investigated across the ZnO/LSMO interface by recording the LSMO channel resistance, at room temperature, that suggest the tuning of signature and value of ER by considering forward and reverse bias modes across the interface. FEC studies show the large ER ∼ +750% and −85% across the LSMO channel with its tunability under different interface biases. |
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| AbstractList | In the present communication, ZnO/La0.7Sr0.3MnO3/Al2O3 (ZnO/LSMO/Al2O3) heterostructure was grown using chemical solution deposition (CSD) technique. X–ray diffraction (XRD) measurement confirms the (100) crystallographic oriented growth of LSMO manganite and polycrystalline hexagonal growth of ZnO layer. Temperature dependent resistivity behavior under different applied magnetic fields, performed for two different geometries [current in plane (CIP) and current perpendicular to plane (CPP)], suggests the modifications in metal to insulator transition temperature TP and alterations in resistivity with applied magnetic field and measurement geometry. This also implies the better charge conduction across the ZnO/LSMO interface (CPP) as compared to LSMO film layer (CIP). Various charge conduction mechanisms have been employed to understand the charge transport for observed low temperature resistivity minimum, metallic behavior, insulating state and magnetoresistance (MR) of LSMO film and ZnO/LSMO interface. Electroresistance (ER) and field effect configuration (FEC) have been investigated across the ZnO/LSMO interface by recording the LSMO channel resistance, at room temperature, that suggest the tuning of signature and value of ER by considering forward and reverse bias modes across the interface. FEC studies show the large ER ∼ +750% and −85% across the LSMO channel with its tunability under different interface biases. |
| Author | Gadani, Keval Pandya, D.D. Venkateshwarlu, D. Rajyaguru, Bhargav Sagapariya, Khushal Solanki, P.S. Shrimali, V.G. Amaladass, E.P. Shah, N.A. |
| Author_xml | – sequence: 1 givenname: Khushal surname: Sagapariya fullname: Sagapariya, Khushal organization: Department of Physics, Saurashtra University, Rajkot, 360 005, India – sequence: 2 givenname: D. surname: Venkateshwarlu fullname: Venkateshwarlu, D. organization: Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam, 603 102, India – sequence: 3 givenname: Bhargav surname: Rajyaguru fullname: Rajyaguru, Bhargav organization: Department of Physics, Saurashtra University, Rajkot, 360 005, India – sequence: 4 givenname: Keval surname: Gadani fullname: Gadani, Keval organization: Department of Physics, Saurashtra University, Rajkot, 360 005, India – sequence: 5 givenname: V.G. surname: Shrimali fullname: Shrimali, V.G. organization: Department of Physics, Saurashtra University, Rajkot, 360 005, India – sequence: 6 givenname: D.D. surname: Pandya fullname: Pandya, D.D. organization: Human Resource Development Center, Saurashtra University, Rajkot, 360 005, India – sequence: 7 givenname: E.P. surname: Amaladass fullname: Amaladass, E.P. organization: Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam, 603 102, India – sequence: 8 givenname: N.A. surname: Shah fullname: Shah, N.A. organization: Department of Physics, Saurashtra University, Rajkot, 360 005, India – sequence: 9 givenname: P.S. surname: Solanki fullname: Solanki, P.S. email: piyush.physics@gmail.com organization: Department of Physics, Saurashtra University, Rajkot, 360 005, India |
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| Snippet | In the present communication, ZnO/La0.7Sr0.3MnO3/Al2O3 (ZnO/LSMO/Al2O3) heterostructure was grown using chemical solution deposition (CSD) technique. X–ray... |
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| SubjectTerms | Electroresistance Heterostructure Manganite Transport |
| Title | Transport properties and electroresistance of manganite based heterostructure |
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