Simulation of the sensitive region to SEGR in power MOSFETs - 王立新 陆江 刘刚 王春林 腾瑞 韩郑生 夏洋 (Journal of semiconductors, 2012)
Keywords: Aircraft components; Estimates; Failure modes; Gates; MOSFETs; Proposals; Semiconductors; Simulation; 三层结构; 仿真工具; 功率MOSFET; 失效模式; 敏感区; 模拟; 细胞; 航天应用