A novel terminal structure for total dose irradiation hardened of a P-VDMOS

• Published in: Journal of semiconductors Vol. 35; no. 5; pp. 42 - 45
• Main Author: 唐昭焕 刘嵘侃 谭开洲 罗俊 胡刚毅 李儒章 任华平 王斌
• Format: Journal Article
• Language: English
• Published: 01.05.2014
• Subjects: Breakdown; DMOS工艺; Electric potential; Hardening; Irradiation; P沟道; Semiconductors; Simulation; Terminals; VDMOS器件; Voltage; X-射线; 总剂量辐照; 硬化; 空间辐射环境; 终端结构

Using positive surface charge instead of traditional γ-ray total dose irradiation, the electric field distribution of a P-channel VDMOS terminal has been analyzed. A novel terminal structure for improving the total dose irradiation hardened of P-channel VDMOS has been proposed, and the structure is...