A novel terminal structure for total dose irradiation hardened of a P-VDMOS

Using positive surface charge instead of traditional γ-ray total dose irradiation, the electric field distribution of a P-channel VDMOS terminal has been analyzed. A novel terminal structure for improving the total dose irradiation hardened of P-channel VDMOS has been proposed, and the structure is...

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Published inJournal of semiconductors Vol. 35; no. 5; pp. 42 - 45
Main Author 唐昭焕 刘嵘侃 谭开洲 罗俊 胡刚毅 李儒章 任华平 王斌
Format Journal Article
LanguageEnglish
Published 01.05.2014
Subjects
Breakdown
DMOS工艺
Electric potential
Hardening
Irradiation
P沟道
Semiconductors
Simulation
Terminals
VDMOS器件
Voltage
X-射线
总剂量辐照
硬化
空间辐射环境
终端结构
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Summary:Using positive surface charge instead of traditional γ-ray total dose irradiation, the electric field distribution of a P-channel VDMOS terminal has been analyzed. A novel terminal structure for improving the total dose irradiation hardened of P-channel VDMOS has been proposed, and the structure is simulated and demonstrated with a -150 V P-channel VDMOS. The results show that the peak current density is reduced from 5.51 × 10^3 A/cm^2 to 2.01 × 10^3 A/cm^2, and the changed value of the breakdown voltage is 2.5 V at 500 krad（Si）. Especially, using 60Co and X-ray to validate the results, which strictly match with the simulated values, there is not any added mask or process to fabricate the novel structure, of which the process is compatible with common P-channel VDMOS processes. The novel terminal structure can be widely used in total irradiation hardened P-channel VDMOS design and fabrication, which holds a great potential application in the space irradiation environment.
Bibliography:Tang Zhaohuan, Liu Rongkan, Tan Kaizhou, Luo Jun, Hu Gangyi, Li Ruzhang, Ren Huaping, Wang Bin（1 Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China ;2Sichuan Institute of Solid-State Circuits, China Electronics Technology Group Corp, Chongqing 400060, China ;3 Quality and Safety Detecting Centre of Chongqing Special Equipment, Chongqing 401121, China）
Using positive surface charge instead of traditional γ-ray total dose irradiation, the electric field distribution of a P-channel VDMOS terminal has been analyzed. A novel terminal structure for improving the total dose irradiation hardened of P-channel VDMOS has been proposed, and the structure is simulated and demonstrated with a -150 V P-channel VDMOS. The results show that the peak current density is reduced from 5.51 × 10^3 A/cm^2 to 2.01 × 10^3 A/cm^2, and the changed value of the breakdown voltage is 2.5 V at 500 krad（Si）. Especially, using 60Co and X-ray to validate the results, which strictly match with the simulated values, there is not any added mask or process to fabricate the novel structure, of which the process is compatible with common P-channel VDMOS processes. The novel terminal structure can be widely used in total irradiation hardened P-channel VDMOS design and fabrication, which holds a great potential application in the space irradiation environment.
P-channel VDMOS; total dose irradiation hardened; stop field limited ring; breakdown voltage
11-5781/TN
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/35/5/054005