Local thermal conductivity of polycrystalline AlN ceramics measured by scanning thermal microscopy and complementary scanning electron microscopy techniques
The local thermal conductivity of polycrystalline aluminum nitride (A1N) ceramics is measured and imaged by using a scanning thermal microscope (SThM) and complementary scanning electron microscope (SEM) based techniques at room temperature. The quantitative thermal conductivity for the A1N sample i...
Saved in:
Published in | Chinese physics B Vol. 21; no. 1; pp. 374 - 379 |
---|---|
Main Author | |
Format | Journal Article |
Language | English |
Published |
2012
|
Subjects | |
Online Access | Get full text |
ISSN | 1674-1056 2058-3834 1741-4199 |
DOI | 10.1088/1674-1056/21/1/016501 |
Cover
Summary: | The local thermal conductivity of polycrystalline aluminum nitride (A1N) ceramics is measured and imaged by using a scanning thermal microscope (SThM) and complementary scanning electron microscope (SEM) based techniques at room temperature. The quantitative thermal conductivity for the A1N sample is gained by using a SThM with a spatial resolution of sub-micrometer scale through using the 3w method. A thermal conductivity of 308 W/m-K within grains corresponding to that of high-purity single crystal A1N is obtained. The slight differences in thermal conduction between the adjacent grains are found to result from crystallographic misorientations, as demonstrated in the electron backscattered diffraction. A much lower thermal conductivity at the grain boundary is due to impurities and defects enriched in these sites, as indicated by energy dispersive X-ray spectroscopy. |
---|---|
Bibliography: | The local thermal conductivity of polycrystalline aluminum nitride (A1N) ceramics is measured and imaged by using a scanning thermal microscope (SThM) and complementary scanning electron microscope (SEM) based techniques at room temperature. The quantitative thermal conductivity for the A1N sample is gained by using a SThM with a spatial resolution of sub-micrometer scale through using the 3w method. A thermal conductivity of 308 W/m-K within grains corresponding to that of high-purity single crystal A1N is obtained. The slight differences in thermal conduction between the adjacent grains are found to result from crystallographic misorientations, as demonstrated in the electron backscattered diffraction. A much lower thermal conductivity at the grain boundary is due to impurities and defects enriched in these sites, as indicated by energy dispersive X-ray spectroscopy. thermal conductivity, A1N ceramics, scanning thermal microscopy, scanning electronmicroscopy 11-5639/O4 Zhang Yue-Fei, Wang Li, R. Heiderhoff, A.K. Geinzer Wei Bin, ai Vuan, Han Xiao-Dong, L. J. Balk, and Zhang Ze(a) Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China b) Department of Electronics, Faculty of Electrical, Information and Media Engineering, University of Wuppertal, Wuppertal D-42119, Germany c) Department of Materials Science, Zhejiang University, Hangzhou 300038, China ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1674-1056 2058-3834 1741-4199 |
DOI: | 10.1088/1674-1056/21/1/016501 |