Local thermal conductivity of polycrystalline AlN ceramics measured by scanning thermal microscopy and complementary scanning electron microscopy techniques

The local thermal conductivity of polycrystalline aluminum nitride (A1N) ceramics is measured and imaged by using a scanning thermal microscope (SThM) and complementary scanning electron microscope (SEM) based techniques at room temperature. The quantitative thermal conductivity for the A1N sample i...

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Published inChinese physics B Vol. 21; no. 1; pp. 374 - 379
Main Author 张跃飞 王丽 R. Heiderhoff A. K. Oeinzer 卫斌 吉元 韩晓东 L. J. Balk 张泽
Format Journal Article
LanguageEnglish
Published 2012
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/21/1/016501

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Summary:The local thermal conductivity of polycrystalline aluminum nitride (A1N) ceramics is measured and imaged by using a scanning thermal microscope (SThM) and complementary scanning electron microscope (SEM) based techniques at room temperature. The quantitative thermal conductivity for the A1N sample is gained by using a SThM with a spatial resolution of sub-micrometer scale through using the 3w method. A thermal conductivity of 308 W/m-K within grains corresponding to that of high-purity single crystal A1N is obtained. The slight differences in thermal conduction between the adjacent grains are found to result from crystallographic misorientations, as demonstrated in the electron backscattered diffraction. A much lower thermal conductivity at the grain boundary is due to impurities and defects enriched in these sites, as indicated by energy dispersive X-ray spectroscopy.
Bibliography:The local thermal conductivity of polycrystalline aluminum nitride (A1N) ceramics is measured and imaged by using a scanning thermal microscope (SThM) and complementary scanning electron microscope (SEM) based techniques at room temperature. The quantitative thermal conductivity for the A1N sample is gained by using a SThM with a spatial resolution of sub-micrometer scale through using the 3w method. A thermal conductivity of 308 W/m-K within grains corresponding to that of high-purity single crystal A1N is obtained. The slight differences in thermal conduction between the adjacent grains are found to result from crystallographic misorientations, as demonstrated in the electron backscattered diffraction. A much lower thermal conductivity at the grain boundary is due to impurities and defects enriched in these sites, as indicated by energy dispersive X-ray spectroscopy.
thermal conductivity, A1N ceramics, scanning thermal microscopy, scanning electronmicroscopy
11-5639/O4
Zhang Yue-Fei, Wang Li, R. Heiderhoff, A.K. Geinzer Wei Bin, ai Vuan, Han Xiao-Dong, L. J. Balk, and Zhang Ze(a) Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China b) Department of Electronics, Faculty of Electrical, Information and Media Engineering, University of Wuppertal, Wuppertal D-42119, Germany c) Department of Materials Science, Zhejiang University, Hangzhou 300038, China
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SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/21/1/016501