Fabrication and characterization of 4H-SiC bipolar junction transistor with double base epilayer
In this paper we report on a novel structure of a 4H-SiC bipolar junction transistor with a double base epilayer that is continuously grown. The measured dc common-emitter current gain is 16.8 at Ic = 28.6 mA （Jc = 183.4 A/cm2）, and it increases with the collector current density increasing. The spe...
Saved in:
| Published in | Chinese physics B Vol. 21; no. 8; pp. 570 - 573 |
|---|---|
| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.08.2012
|
| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 1741-4199 |
| DOI | 10.1088/1674-1056/21/8/088502 |
Cover
| Abstract | In this paper we report on a novel structure of a 4H-SiC bipolar junction transistor with a double base epilayer that is continuously grown. The measured dc common-emitter current gain is 16.8 at Ic = 28.6 mA （Jc = 183.4 A/cm2）, and it increases with the collector current density increasing. The specific on-state resistance （Rsp-on） is 32.3 mΩ.cm2 and the open-base breakdown voltage reaches 410 V. The emitter N-type specific contact resistance and N＋ emitter layer sheet resistance are 1.7× 10-3 Ω.cm2 and 150 Ω/□, respectively. |
|---|---|
| AbstractList | In this paper we report on a novel structure of a 4H-SiC bipolar junction transistor with a double base epilayer that is continuously grown. The measured dc common-emitter current gain is 16.8 at I sub(C) = 28.6 mA (J sub(C) = 183.4 A/cm super(2)), and it increases with the collector current density increasing. The specific on-state resistance (R sub(sp-on)) is 32.3 m[Omega] times cm super(2) and the open-base breakdown voltage reaches 410 V. The emitter N-type specific contact resistance and N+ emitter layer sheet resistance are 1.7x 10 super(-3) [Omega] times cm super(2) and 150 [Omega]/[whitesquare], respectively. In this paper we report on a novel structure of a 4H-SiC bipolar junction transistor with a double base epilayer that is continuously grown. The measured dc common-emitter current gain is 16.8 at Ic = 28.6 mA （Jc = 183.4 A/cm2）, and it increases with the collector current density increasing. The specific on-state resistance （Rsp-on） is 32.3 mΩ.cm2 and the open-base breakdown voltage reaches 410 V. The emitter N-type specific contact resistance and N＋ emitter layer sheet resistance are 1.7× 10-3 Ω.cm2 and 150 Ω/□, respectively. |
| Author | 张倩 张玉明 元磊 张义门 汤晓燕 宋庆文 |
| AuthorAffiliation | School of Microelectronics, Key Laboratory of Semiconductor Wide Band-Gap Materials and Devices, Xidian University, Xi＇an 710071, China |
| Author_xml | – sequence: 1 fullname: 张倩 张玉明 元磊 张义门 汤晓燕 宋庆文 |
| BookMark | eNqFkE1LAzEQhoNUsK3-BCHevKzNJJvdLJ6k-AWCB_Uck3TWRrZJm2wR_fX2Qzx48TTwzvsMzDMigxADEnIK7AKYUhOo6rIAJqsJh4mabCLJ-AEZciZVIZQoB2T42zkio5zfGauAcTEkrzfGJu9M72OgJsyom5tkXI_Jf-3D2NLyrnjyU2r9MnYm0fd1cLtVn0zIPvcx0Q_fz-ksrm2H1JqMFJe-M5-Yjslha7qMJz9zTF5urp-nd8XD4-399OqhcAJ4Xwim6qZBwVkLTS2VM5ZVTllkwIywEhRnIG3DTV0hoBMoqhmvKjUrsbGtEWNyvr-7THG1xtzrhc8Ou84EjOusoZZCcilLsale7qsuxZwTttr5fvfs5iHfaWB661VvnemtM81BK733uqHlH3qZ_MKkz3-5sx9uHsPbyoe3X7DkDUBZMvENmMOJCA |
| CitedBy_id | crossref_primary_10_1088_1674_1056_23_5_058105 crossref_primary_10_1088_1674_1056_22_9_097201 crossref_primary_10_1088_1674_1056_22_2_027302 crossref_primary_10_1016_j_tsf_2014_10_002 |
| Cites_doi | 10.1109/LED.2005.851174 10.1088/1674-4926/31/11/114005 10.1088/1674-4926/30/9/094003 10.1109/LED.2004.842731 10.1109/LED.2006.873370 10.1088/1674-4926/31/7/074007 10.1109/LED.2005.856010 |
| ContentType | Journal Article |
| DBID | 2RA 92L CQIGP ~WA AAYXX CITATION 7SP 7U5 8FD H8D L7M |
| DOI | 10.1088/1674-1056/21/8/088502 |
| DatabaseName | 维普期刊资源整合服务平台 中文科技期刊数据库-CALIS站点 中文科技期刊数据库-7.0平台 中文科技期刊数据库- 镜像站点 CrossRef Electronics & Communications Abstracts Solid State and Superconductivity Abstracts Technology Research Database Aerospace Database Advanced Technologies Database with Aerospace |
| DatabaseTitle | CrossRef Aerospace Database Solid State and Superconductivity Abstracts Technology Research Database Advanced Technologies Database with Aerospace Electronics & Communications Abstracts |
| DatabaseTitleList | Aerospace Database |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Physics |
| DocumentTitleAlternate | Fabrication and characterization of 4H-SiC bipolar junction transistor with double base epilayer |
| EISSN | 2058-3834 1741-4199 |
| EndPage | 573 |
| ExternalDocumentID | 10_1088_1674_1056_21_8_088502 42911440 |
| GroupedDBID | 02O 1JI 1WK 29B 2RA 4.4 5B3 5GY 5VR 5VS 5ZH 6J9 7.M 7.Q 92L AAGCD AAJIO AAJKP AALHV AATNI ABHWH ABJNI ABQJV ACAFW ACGFS ACHIP AEFHF AENEX AFUIB AFYNE AHSEE AKPSB ALMA_UNASSIGNED_HOLDINGS ASPBG ATQHT AVWKF AZFZN BBWZM CCEZO CCVFK CEBXE CHBEP CJUJL CQIGP CRLBU CS3 DU5 EBS EDWGO EJD EMSAF EPQRW EQZZN FA0 FEDTE HAK HVGLF IJHAN IOP IZVLO JCGBZ KNG KOT M45 N5L NT- NT. PJBAE Q02 RIN RNS ROL RPA RW3 SY9 TCJ TGP UCJ W28 ~WA -SA -S~ AAYXX ACARI ADEQX AERVB AGQPQ AOAED ARNYC CAJEA CITATION Q-- U1G U5K 7SP 7U5 8FD AEINN H8D L7M |
| ID | FETCH-LOGICAL-c312t-308799e320f19758cab06c8be010a3b5182015b92a76e1ec3e36d2668d4e9bfa3 |
| ISSN | 1674-1056 |
| IngestDate | Fri Sep 05 09:03:54 EDT 2025 Thu Apr 24 22:52:15 EDT 2025 Tue Jul 01 04:00:01 EDT 2025 Wed Feb 14 10:45:21 EST 2024 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 8 |
| Language | English |
| LinkModel | OpenURL |
| MergedId | FETCHMERGED-LOGICAL-c312t-308799e320f19758cab06c8be010a3b5182015b92a76e1ec3e36d2668d4e9bfa3 |
| Notes | In this paper we report on a novel structure of a 4H-SiC bipolar junction transistor with a double base epilayer that is continuously grown. The measured dc common-emitter current gain is 16.8 at Ic = 28.6 mA （Jc = 183.4 A/cm2）, and it increases with the collector current density increasing. The specific on-state resistance （Rsp-on） is 32.3 mΩ.cm2 and the open-base breakdown voltage reaches 410 V. The emitter N-type specific contact resistance and N＋ emitter layer sheet resistance are 1.7× 10-3 Ω.cm2 and 150 Ω/□, respectively. 4H-SiC, bipolar junction transistors, common-emitter current gain, specific onresistance, open-base breakdown voltage 11-5639/O4 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
| PQID | 1753525543 |
| PQPubID | 23500 |
| PageCount | 4 |
| ParticipantIDs | proquest_miscellaneous_1753525543 crossref_citationtrail_10_1088_1674_1056_21_8_088502 crossref_primary_10_1088_1674_1056_21_8_088502 chongqing_primary_42911440 |
| ProviderPackageCode | CITATION AAYXX |
| PublicationCentury | 2000 |
| PublicationDate | 2012-08-01 |
| PublicationDateYYYYMMDD | 2012-08-01 |
| PublicationDate_xml | – month: 08 year: 2012 text: 2012-08-01 day: 01 |
| PublicationDecade | 2010 |
| PublicationTitle | Chinese physics B |
| PublicationTitleAlternate | Chinese Physics |
| PublicationYear | 2012 |
| References | 1 2 3 4 Zhang Q (5) 2009; 30 Zhang Q (6) 2010; 31 Zhang Q (7) 2010; 31 |
| References_xml | – ident: 3 doi: 10.1109/LED.2005.851174 – volume: 31 start-page: 114005 issn: 1674-4926 year: 2010 ident: 6 publication-title: J. Semicond. doi: 10.1088/1674-4926/31/11/114005 – volume: 30 start-page: 094003 year: 2009 ident: 5 publication-title: J. Semicond. doi: 10.1088/1674-4926/30/9/094003 – ident: 1 doi: 10.1109/LED.2004.842731 – ident: 2 doi: 10.1109/LED.2006.873370 – volume: 31 start-page: 074007 year: 2010 ident: 7 publication-title: J. Semicond. doi: 10.1088/1674-4926/31/7/074007 – ident: 4 doi: 10.1109/LED.2005.856010 |
| SSID | ssj0061023 ssib054405859 ssib000804704 |
| Score | 1.9274133 |
| Snippet | In this paper we report on a novel structure of a 4H-SiC bipolar junction transistor with a double base epilayer that is continuously grown. The measured dc... |
| SourceID | proquest crossref chongqing |
| SourceType | Aggregation Database Enrichment Source Index Database Publisher |
| StartPage | 570 |
| SubjectTerms | 4H-SiC Breakdown Contact resistance Electric potential Electrical resistivity Emittance Gain Junction transistors Semiconductor devices Voltage 制备 双极 外延层 电极电流密度 电流增益 结型晶体管 表征 |
| Title | Fabrication and characterization of 4H-SiC bipolar junction transistor with double base epilayer |
| URI | http://lib.cqvip.com/qk/85823A/201208/42911440.html https://www.proquest.com/docview/1753525543 |
| Volume | 21 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV3db9MwELfKEBIviE_R8SEj8VZljWM7cR7RtKqgdRuilbonY6cuK5qasrVC7K_nLnbSFJAYvFjRpXEq3y_3Zd8dIW9TIY21HHwThoPk88iY2EQunkuTZLEtqp6Ro5N0OBEfpnLa6XxvZ5es7UFx88e8kv_hKtCAr5gl-w-cbSYFAlwDf2EEDsN4Kx4PjL0KMTefn9ZUX75pLEExjD4tDnt2sUIntvcV9Fh1a41KqqoR4mOxs3KDSVSo1Xputbg0P8K53bqMwUXVrDKEQq633ZqbkPPHFtIa4vkmGtXacYe-iEbbLLRxoE4XpozOwzQhFoGHOlQdi_DiM80ECHYZilt7GtgsuNect2VuwlrYUi0BCkJPxklLHWMAF0k-F-g3gQ83MfZQvxfzW1ADVJkNranaZbZPTvVgcnysx0fT8R1yN8myan___elZyy6KRbb1U6UAs1ah3edVfIr1LtCTr19bp4Yp1W9o_YT1Vd__CSzccVEuv3yDBd81gHb1f2XUjB-SB8Eboe88tB6Rjls-JvfOPIufkM8tgFEAGP0VYLScUw8wGgBGa4DRLcAoAox6gFEEGK0B9pRMBkfjw2EUWnJEBWfJOsL6kXnueBLPWQ6uZmFsnBbKOnDrDbcS2wEwafPEZKljruCOpzOwAdVMuNzODX9G9pbl0j0nVChenQMoMulErAorBbMGBArjTgjDumS_WTO98qVXNFhPDI8jdImoF1EXoZg99lS51NWhCqU08kEjH3TCtNKeD11y0DxWT_mXB97UHNIgd3EzzSxdubnWWOFWgj8u-P4tfvOC3N9-Ly_J3vpq416BNbu2ryvk_QQKRZUV |
| linkProvider | IOP Publishing |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Fabrication+and+characterization+of+4H-SiC+bipolar+junction+transistor+with+double+base+epilayer&rft.jtitle=Chinese+physics+B&rft.au=Zhang%2C+Qian&rft.au=Zhang%2C+Yu-Ming&rft.au=Zhang%2C+Yi-Men&rft.au=Tang%2C+Xiao-Yan&rft.date=2012-08-01&rft.issn=1674-1056&rft.eissn=1741-4199&rft.volume=21&rft.issue=8&rft.spage=088502&rft.epage=1-088502-4&rft_id=info:doi/10.1088%2F1674-1056%2F21%2F8%2F088502&rft.externalDBID=NO_FULL_TEXT |
| thumbnail_s | http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=http%3A%2F%2Fimage.cqvip.com%2Fvip1000%2Fqk%2F85823A%2F85823A.jpg |