宋庆文, 张. 张. 元. 张. 汤. (2012). Fabrication and characterization of 4H-SiC bipolar junction transistor with double base epilayer. Chinese physics B, 21(8), 570-573. https://doi.org/10.1088/1674-1056/21/8/088502
Chicago Style (17th ed.) Citation宋庆文, 张倩 张玉明 元磊 张义门 汤晓燕. "Fabrication and Characterization of 4H-SiC Bipolar Junction Transistor with Double Base Epilayer." Chinese Physics B 21, no. 8 (2012): 570-573. https://doi.org/10.1088/1674-1056/21/8/088502.
MLA (9th ed.) Citation宋庆文, 张倩 张玉明 元磊 张义门 汤晓燕. "Fabrication and Characterization of 4H-SiC Bipolar Junction Transistor with Double Base Epilayer." Chinese Physics B, vol. 21, no. 8, 2012, pp. 570-573, https://doi.org/10.1088/1674-1056/21/8/088502.
Warning: These citations may not always be 100% accurate.