Degradation mechanism in carbon-doped GaAs minority-carrier injection devices [HBTs]

• Published in: IEEE transactions on electron devices Vol. 44; no. 11; pp. 1996 - 2001
• Main Authors: Fushimi, H., Wada, K.
• Format: Journal Article
• Language: English
• Published: IEEE 01.11.1997
• Subjects: Current measurement; Degradation; Electrons; Gallium arsenide; Hydrogen; Kinetic theory; Leakage current; Low voltage; Luminescence; Spontaneous emission

Degradation behavior and mechanism of GaAs-based devices under minority-carrier injection has been studied by measuring the increase in the leakage current and the luminescence lifetime of minority carriers. It is found that hydrogen unintentionally incorporated in GaAs-based devices induces degrada...