Ionizing radiation defects and reliability of Gallium Nitride-based III-V semiconductor devices: A comprehensive review

• Published in: Microelectronics and reliability Vol. 159; p. 115445
• Main Authors: Sandeep, V., Pravin, J. Charles, Kumar, S. Ashok
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.08.2024
• Subjects: Displacement damage; GaN; HEMT; Single event effects; Total-Ionizing-Dose; Displacement damage; HEMT; GaN; Total-Ionizing-Dose; Single event effects
• ISSN: 0026-2714; 1872-941X
• DOI: 10.1016/j.microrel.2024.115445

The remote sensing and satellite community working for space organizations have expressed interest in building advanced devices with potential choices for Gallium Nitride based transistors. Radar and satellite communication applications employ nitride High Electron Mobility Transistors (HEMTs) due t...