A self-heating study on multi-finger AlGaN/GaN high electron mobility transistors - 杨丽媛 艾姗 陈永和 曹梦逸 张凯 马晓华 郝跃 (Journal of semiconductors, 2013)
Keywords: AlGaN; Aluminum gallium nitrides; Channels; Devices; Drains; Gallium nitrides; HEMT器件; High electron mobility transistors; Semiconductor devices; Semiconductors; 手指; 显微拉曼散射; 温度分布; 移动设备; 自热; 高电子迁移率晶体管